STMicroelectronics STS8DNF3LL

Name: STS8DNF3LL
Brand: STMicroelectronics
SKU: 2473899-STS8DNF3LL
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: STS8DNF3LL

Manufacturer:: STMicroelectronics

Ventron No:: 2473899-STS8DNF3LL

Description:: MOSFET 2N-CH 30V 8A 8-SOIC

ECAD Model:

Datasheet:: STS8DNF3LL

Specifications

STMicroelectronics STS8DNF3LL technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STS8DNF3LL.

Lifecycle Status
NRND (Last Updated: 8 months ago)
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154, 3.90mm Width)
Number of Pins
8
Weight
4.535924g
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Series
STripFET™ II
JESD-609 Code
e4
Part Status
Not For New Designs
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
8
ECCN Code
EAR99
Resistance
20mOhm
Terminal Finish
Nickel/Palladium/Gold (Ni/Pd/Au)
Subcategory
FET General Purpose Power
Voltage - Rated DC
30V
Max Power Dissipation
1.6W
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
8A
Time@Peak Reflow Temperature-Max (s)
30
Base Part Number
STS8DN
Pin Count
8
Number of Elements
2
Operating Mode
ENHANCEMENT MODE
Power Dissipation
2W
Turn On Delay Time
18 ns
FET Type
2 N-Channel (Dual)
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
20m Ω @ 4A, 10V
Vgs(th) (Max) @ Id
1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
800pF @ 25V
Gate Charge (Qg) (Max) @ Vgs
17nC @ 5V
Rise Time
32ns
Fall Time (Typ)
11 ns
Turn-Off Delay Time
21 ns
Continuous Drain Current (ID)
8A
Gate to Source Voltage (Vgs)
16V
Drain Current-Max (Abs) (ID)
8A
Drain to Source Breakdown Voltage
30V
FET Technology
METAL-OXIDE SEMICONDUCTOR
FET Feature
Logic Level Gate
Height
6.35mm
Length
12.7mm
Width
6.35mm
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

STS8DNF3LL   Description
  This power MOSFET is developed using STMicroelectronics' unique STripFET process, which is designed to minimize input capacitance and gate charge. This makes the device suitable for use as the main switch for advanced, highly efficient isolated DC-DC converters for telecommunications and computer applications, as well as applications with low gate charge drive requirements.
STS8DNF3LL   Features
? Optimal RDS(on) x Qg trade-off @ 4.5 V ? Conduction losses reduced ? Switching losses reduced
STS8DNF3LL Applications
? Switching applications

STS8DNF3LL More Descriptions

Dual N-channel 30 V, 0.017 Ohm typ., 8 A STripFET(TM) II Power MOSFET in a SO-8 package
Transistor MOSFET Array Dual N-CH 30V 8A 8-Pin SOIC T/R
Trans MOSFET N-CH 30V 8A 8-Pin SO N T/R / MOSFET 2N-CH 30V 8A 8-SOIC
Dual N-Channel 30 V 0.02 O 12.5 nC Surface Mount STripFET II Mosfet- SOIC-8
DUAL N CHANNEL MOSFET, 30V, SOIC; Transi; DUAL N CHANNEL MOSFET, 30V, SOIC; Transistor Polarity:N Channel; Continuous Drain Current Id, N Channel:8A; Drain Source Voltage Vds, N Channel:30V; On Resistance Rds(on), N Channel:0.017ohm; Rds(on) Test Voltage Vgs:10V
Channel Type:Dual N Channel; Drain Source Voltage Vds N Channel:30V; Drain Source Voltage Vds P Channel:-; Continuous Drain Current Id N Channel:8A; Continuous Drain Current Id P Channel:-; No. of Pins:8Pins; Product Range:- RoHS Compliant: Yes

Certification