STMicroelectronics STS8DNH3LL

Name: STS8DNH3LL
Brand: STMicroelectronics
SKU: 2477630-STS8DNH3LL
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: STS8DNH3LL

Manufacturer:: STMicroelectronics

Ventron No:: 2477630-STS8DNH3LL

Description:: MOSFET 2N-CH 30V 8A 8-SOIC

ECAD Model:

Datasheet:: STS8DNH3LL

Specifications

STMicroelectronics STS8DNH3LL technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STS8DNH3LL.

Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154, 3.90mm Width)
Number of Pins
8
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Series
STripFET™ III
JESD-609 Code
e4
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
8
ECCN Code
EAR99
Resistance
22mOhm
Terminal Finish
Nickel/Palladium/Gold (Ni/Pd/Au)
Subcategory
FET General Purpose Power
Voltage - Rated DC
30V
Max Power Dissipation
2W
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
8A
Time@Peak Reflow Temperature-Max (s)
30
Base Part Number
STS8DN
Pin Count
8
Qualification Status
Not Qualified
Number of Elements
2
Operating Mode
ENHANCEMENT MODE
Power Dissipation
2W
FET Type
2 N-Channel (Dual)
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
22m Ω @ 4A, 10V
Vgs(th) (Max) @ Id
1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
857pF @ 25V
Gate Charge (Qg) (Max) @ Vgs
10nC @ 4.5V
Rise Time
14.5ns
Fall Time (Typ)
8 ns
Turn-Off Delay Time
23 ns
Continuous Drain Current (ID)
8A
Gate to Source Voltage (Vgs)
16V
Drain Current-Max (Abs) (ID)
8A
Drain to Source Breakdown Voltage
30V
FET Technology
METAL-OXIDE SEMICONDUCTOR
FET Feature
Logic Level Gate
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

STS8DNH3LL Description This product adopts the latest advanced design rules of ST's proprietary STripFET converter technology and is suitable for the most demanding DC-DC converter applications that require high efficiency. STS8DNH3LL Features
■ Optimal RDS(on) x Qg trade-off @ 4.5 V ■ Conduction losses reduced ■ Switching losses reduced
STS8DNH3LL Application
■ Switching applications

STS8DNH3LL More Descriptions

DUAL N-CHANNEL 30V 0.018 Ohm - 8A - SO-8 LOW GATE CHARGE STripFET III MOSFET
DUAL N CHANNEL MOSFET, 30V, SOIC, FULL REEL
Power MOSFET Transistors Dual N-Ch 30 Volt 8A
Trans MOSFET N-CH 30V 8A 8-Pin SO N T/R
Small Signal Field-Effect Transistor, 8A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET 2N CH 30V 8A 8-SOIC; Transistor Polarity:Dual N Channel; On State Resistance:18mohm; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:SOIC; Case Style:SOIC; Cont Current Id:4A; Termination Type:SMD; Transistor Type:Power MOSFET; Typ Voltage Vds:30V; Typ Voltage Vgs th:1V; Voltage Vgs Rds on Measurement:10V

Certification