STMicroelectronics STS8DN3LLH5

Name: STS8DN3LLH5
Brand: STMicroelectronics
SKU: 3585717-STS8DN3LLH5
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: STS8DN3LLH5

Manufacturer:: STMicroelectronics

Ventron No:: 3585717-STS8DN3LLH5

Description:: MOSFET 2N-CH 30V 10A 8SO

ECAD Model:

Datasheet:: STS8DN3LLH5

Specifications

STMicroelectronics STS8DN3LLH5 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STS8DN3LLH5.

Lifecycle Status
ACTIVE (Last Updated: 7 months ago)
Factory Lead Time
14 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154, 3.90mm Width)
Number of Pins
8
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Series
STripFET™ V
JESD-609 Code
e4
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
8
ECCN Code
EAR99
Resistance
19MOhm
Terminal Finish
Nickel/Palladium/Gold (Ni/Pd/Au)
Subcategory
FET General Purpose Power
Max Power Dissipation
2.7W
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Time@Peak Reflow Temperature-Max (s)
30
Base Part Number
STS8DN
Pin Count
8
Number of Elements
2
Element Configuration
Dual
Operating Mode
ENHANCEMENT MODE
Power Dissipation
2.7W
Turn On Delay Time
4 ns
FET Type
2 N-Channel (Dual)
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
19m Ω @ 5A, 10V
Vgs(th) (Max) @ Id
1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
724pF @ 25V
Gate Charge (Qg) (Max) @ Vgs
5.4nC @ 4.5V
Rise Time
4.2ns
Drain to Source Voltage (Vdss)
30V
Fall Time (Typ)
3.5 ns
Turn-Off Delay Time
21.1 ns
Continuous Drain Current (ID)
10A
Gate to Source Voltage (Vgs)
22V
Drain to Source Breakdown Voltage
30V
Pulsed Drain Current-Max (IDM)
40A
FET Technology
METAL-OXIDE SEMICONDUCTOR
FET Feature
Logic Level Gate
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

STS8DN3LLH5 Description This STripFET V power MOSFET technology is one of the latest improvements, specifically tailored to achieve extremely low on-resistance, and is one of the best FOM of its kind. STS8DN3LLH5 Features
RDS(on) * Qg industry benchmark Extremely low on-resistance RDS(on) Very low switching gate charge High avalanche ruggedness Low gate drive power losses
STS8DN3LLH5 Application
Switching applications

STS8DN3LLH5 More Descriptions

Dual N-channel 30 V, 0.0155 Ohm typ., 10 A STripFET(TM) V Power MOSFET in a SO-8 package
Dual Channel 30 V 10 A 19 mOhm Surface Mount Power Mosfet - SOIC-8
Transistor MOSFET Array Dual N-CH 30V 10A 8-Pin SOIC T/R

Certification