STMicroelectronics STS4DNFS30L

Name: STS4DNFS30L
Brand: STMicroelectronics
SKU: 2488593-STS4DNFS30L
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: STS4DNFS30L

Manufacturer:: STMicroelectronics

Ventron No:: 2488593-STS4DNFS30L

Description:: MOSFET N-CH 30V 4A 8-SOIC

ECAD Model:

Datasheet:: STS4DNFS30L

Specifications

STMicroelectronics STS4DNFS30L technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STS4DNFS30L.

Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154, 3.90mm Width)
Number of Pins
8
Weight
4.535924g
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Series
STripFET™
JESD-609 Code
e4
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
8
ECCN Code
EAR99
Resistance
56mOhm
Terminal Finish
Nickel/Palladium/Gold (Ni/Pd/Au)
Subcategory
FET General Purpose Power
Voltage - Rated DC
30V
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
4A
Time@Peak Reflow Temperature-Max (s)
30
Base Part Number
STS4D
Pin Count
8
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max
2W Tc
Operating Mode
ENHANCEMENT MODE
Power Dissipation
2W
Turn On Delay Time
11 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
55m Ω @ 2A, 10V
Vgs(th) (Max) @ Id
1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
330pF @ 25V
Current - Continuous Drain (Id) @ 25°C
4A Tc
Gate Charge (Qg) (Max) @ Vgs
9nC @ 5V
Rise Time
100ns
Drive Voltage (Max Rds On,Min Rds On)
5V 10V
Vgs (Max)
±16V
Fall Time (Typ)
22 ns
Turn-Off Delay Time
25 ns
Continuous Drain Current (ID)
4A
Threshold Voltage
1V
Gate to Source Voltage (Vgs)
16V
Drain Current-Max (Abs) (ID)
4A
Drain to Source Breakdown Voltage
30V
FET Feature
Schottky Diode (Isolated)
Height
6.35mm
Length
6.35mm
Width
12.7mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

STS4DNFS30L Description
The STMicroelectronics STS4DNFS30L is an N-channel Power MOSFET. It associates the latest low voltage STripFET? in the N-channel version to a low drop Schottky diode. Such configuration is extremely versatile in implementing, a large variety of DC-DC converters for printers, portable equipment, and cellular phones.

STS4DNFS30L Features
Standard outline for easy automated surface mount assembly
Low threshold gate drive
Integrated SCHOTTKY rectifier

STS4DNFS30L Applications
Printers
Portable equipment
Cellular phones

STS4DNFS30L More Descriptions

MOSFET Transistor, Dual N Channel, 4 A, 30 V, 0.044 ohm, 10 V, 1 V
N-Channel 30V - 0.039 Ohm - 4A - SO-8 STripFET(TM) MOSFET PLUS SCHOTTKY RECTIFIER
MOSFET, P CO-PAK; Transistor Polarity: Dual N Channel; Continuous Drain Current Id: 4A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.044ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1V; Power Dissipation Pd: 2W; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (17-Dec-2015); Current Id Max: 4A; On State Resistance @ Vgs = 4.5V: 65mohm; On State resistance @ Vgs = 10V: 55mohm; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C; Termination Type: Surface Mount Device; Voltage Vds Typ: 30V; Voltage Vgs Max: 1V; Voltage Vgs Rds on Measurement: 10V

Certification