STMicroelectronics STS14N3LLH5
- Part Number:
- STS14N3LLH5
- Manufacturer:
- STMicroelectronics
- Ventron No:
- 2480496-STS14N3LLH5
- Description:
- MOSFET N-CH 30V 14A 8SOIC
- Datasheet:
- STS14N3LLH5
STMicroelectronics STS14N3LLH5 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STS14N3LLH5.
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case8-SOIC (0.154, 3.90mm Width)
- Number of Pins8
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesSTripFET™ V
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations8
- ECCN CodeEAR99
- Resistance6mOhm
- SubcategoryFET General Purpose Power
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Reach Compliance Codeunknown
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Base Part NumberSTS14
- Pin Count8
- Qualification StatusNot Qualified
- Number of Elements1
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max2.7W Tc
- Operating ModeENHANCEMENT MODE
- Power Dissipation2.7W
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs6m Ω @ 7A, 10V
- Vgs(th) (Max) @ Id1V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds1500pF @ 25V
- Current - Continuous Drain (Id) @ 25°C14A Tc
- Gate Charge (Qg) (Max) @ Vgs12nC @ 4.5V
- Rise Time14.5ns
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±22V
- Fall Time (Typ)4.5 ns
- Turn-Off Delay Time22.7 ns
- Continuous Drain Current (ID)7A
- Threshold Voltage1V
- Gate to Source Voltage (Vgs)22V
- Drain to Source Breakdown Voltage30V
- Pulsed Drain Current-Max (IDM)56A
- REACH SVHCNo SVHC
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
STS14N3LLH5 Overview
A device's maximum input capacitance is 1500pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 7A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=30V, and this device has a drain-to-source breakdown voltage of 30V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 22.7 ns.Its maximum pulsed drain current is 56A, which is also its maximum rating peak drainage current.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 22V.An electrical device's threshold voltage specifies when any of its operations will begin, and this transistor has a threshold voltage of 1V.This device uses no drive voltage (4.5V 10V) to reduce its overall power consumption.
STS14N3LLH5 Features
a continuous drain current (ID) of 7A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 22.7 ns
based on its rated peak drain current 56A.
a threshold voltage of 1V
STS14N3LLH5 Applications
There are a lot of STMicroelectronics
STS14N3LLH5 applications of single MOSFETs transistors.
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters
A device's maximum input capacitance is 1500pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 7A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=30V, and this device has a drain-to-source breakdown voltage of 30V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 22.7 ns.Its maximum pulsed drain current is 56A, which is also its maximum rating peak drainage current.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 22V.An electrical device's threshold voltage specifies when any of its operations will begin, and this transistor has a threshold voltage of 1V.This device uses no drive voltage (4.5V 10V) to reduce its overall power consumption.
STS14N3LLH5 Features
a continuous drain current (ID) of 7A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 22.7 ns
based on its rated peak drain current 56A.
a threshold voltage of 1V
STS14N3LLH5 Applications
There are a lot of STMicroelectronics
STS14N3LLH5 applications of single MOSFETs transistors.
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters
STS14N3LLH5 More Descriptions
N-channel 30V - 0.006Y - 14A - SO-8 STripFET V Power MOSFET
Transistor MOSFET N-CH 30V 14A 8-Pin SO T/R
MOSFET, N CH, 30V, 14A, SOIC-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 7A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.005ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1V; Power Dissipation Pd: 2.7W; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (17-Dec-2015); Current Id Max: 14A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C; Termination Type: Surface Mount Device; Transistor Type: Power MOSFET; Voltage Vds Typ: 30V; Voltage Vgs Max: 22V; Voltage Vgs Rds on Measurement: 10V
Transistor MOSFET N-CH 30V 14A 8-Pin SO T/R
MOSFET, N CH, 30V, 14A, SOIC-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 7A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.005ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1V; Power Dissipation Pd: 2.7W; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (17-Dec-2015); Current Id Max: 14A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C; Termination Type: Surface Mount Device; Transistor Type: Power MOSFET; Voltage Vds Typ: 30V; Voltage Vgs Max: 22V; Voltage Vgs Rds on Measurement: 10V
The three parts on the right have similar specifications to STS14N3LLH5.
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ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingSeriesPart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeResistanceSubcategoryTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountQualification StatusNumber of ElementsConfigurationPower Dissipation-MaxOperating ModePower DissipationFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Drain to Source Breakdown VoltagePulsed Drain Current-Max (IDM)REACH SVHCRoHS StatusLead FreeJESD-609 CodeTerminal FinishVoltage - Rated DCCurrent RatingDrain to Source Voltage (Vdss)Drain-source On Resistance-MaxPbfree CodeElement ConfigurationTurn On Delay TimeNominal VgsRadiation HardeningView Compare
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STS14N3LLH5Surface MountSurface Mount8-SOIC (0.154, 3.90mm Width)8SILICON-55°C~150°C TJTape & Reel (TR)STripFET™ VObsolete1 (Unlimited)8EAR996mOhmFET General Purpose PowerMOSFET (Metal Oxide)DUALGULL WINGNOT SPECIFIEDunknownNOT SPECIFIEDSTS148Not Qualified1SINGLE WITH BUILT-IN DIODE2.7W TcENHANCEMENT MODE2.7WN-ChannelSWITCHING6m Ω @ 7A, 10V1V @ 250μA1500pF @ 25V14A Tc12nC @ 4.5V14.5ns4.5V 10V±22V4.5 ns22.7 ns7A1V22V30V56ANo SVHCROHS3 CompliantLead Free------------
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Surface MountSurface Mount8-SOIC (0.154, 3.90mm Width)8SILICON-55°C~150°C TJTape & Reel (TR)STripFET™ IIObsolete1 (Unlimited)8EAR99-Other TransistorsMOSFET (Metal Oxide)DUALGULL WING260-30STS108Not Qualified1SINGLE WITH BUILT-IN DIODE2.5W TcENHANCEMENT MODE2.5WP-ChannelSWITCHING14m Ω @ 5A, 10V1V @ 250μA2300pF @ 25V10A Tc39nC @ 4.5V87ns4.5V 10V±16V27 ns89 ns10A-16V-30V--ROHS3 CompliantLead Freee4Nickel/Palladium/Gold (Ni/Pd/Au)-30V-10A30V------
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Surface MountSurface Mount8-SOIC (0.154, 3.90mm Width)8SILICON-55°C~175°C TJCut Tape (CT)STripFET™ IIObsolete1 (Unlimited)8EAR99-FET General Purpose PowerMOSFET (Metal Oxide)DUALGULL WING260-30STS178Not Qualified1SINGLE WITH BUILT-IN DIODE3.2W TcENHANCEMENT MODE3.2WN-ChannelSWITCHING5.5m Ω @ 8.5A, 10V1V @ 250μA2160pF @ 25V17A Tc35nC @ 4.5V39ns4.5V 10V±18V37 ns47.5 ns17A-18V30V--ROHS3 CompliantLead Freee4Nickel/Palladium/Gold (Ni/Pd/Au)30V17A-0.007Ohm-----
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Surface MountSurface Mount8-SOIC (0.154, 3.90mm Width)8SILICON-55°C~150°C TJTape & Reel (TR)STripFET™ VObsolete1 (Unlimited)8EAR9913.2mOhmFET General Purpose PowerMOSFET (Metal Oxide)DUALGULL WING260-30STS118-1-2.7W TcENHANCEMENT MODE2.7WN-ChannelSWITCHING14m Ω @ 5.5A, 10V1V @ 250μA724pF @ 25V11A Tc5nC @ 4.5V4.2ns4.5V 10V22V, -20V3.5 ns21 ns11A1V22V30V44ANo SVHCROHS3 CompliantLead Freee4Nickel/Palladium/Gold (Ni/Pd/Au)----yesSingle4 ns1 VNo
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