STS14N3LLH5

STMicroelectronics STS14N3LLH5

Part Number:
STS14N3LLH5
Manufacturer:
STMicroelectronics
Ventron No:
2480496-STS14N3LLH5
Description:
MOSFET N-CH 30V 14A 8SOIC
ECAD Model:
Datasheet:
STS14N3LLH5

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Specifications
STMicroelectronics STS14N3LLH5 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STS14N3LLH5.
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    8-SOIC (0.154, 3.90mm Width)
  • Number of Pins
    8
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    STripFET™ V
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    8
  • ECCN Code
    EAR99
  • Resistance
    6mOhm
  • Subcategory
    FET General Purpose Power
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Reach Compliance Code
    unknown
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Base Part Number
    STS14
  • Pin Count
    8
  • Qualification Status
    Not Qualified
  • Number of Elements
    1
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Power Dissipation-Max
    2.7W Tc
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    2.7W
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    6m Ω @ 7A, 10V
  • Vgs(th) (Max) @ Id
    1V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    1500pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    14A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    12nC @ 4.5V
  • Rise Time
    14.5ns
  • Drive Voltage (Max Rds On,Min Rds On)
    4.5V 10V
  • Vgs (Max)
    ±22V
  • Fall Time (Typ)
    4.5 ns
  • Turn-Off Delay Time
    22.7 ns
  • Continuous Drain Current (ID)
    7A
  • Threshold Voltage
    1V
  • Gate to Source Voltage (Vgs)
    22V
  • Drain to Source Breakdown Voltage
    30V
  • Pulsed Drain Current-Max (IDM)
    56A
  • REACH SVHC
    No SVHC
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
STS14N3LLH5 Overview
A device's maximum input capacitance is 1500pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 7A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=30V, and this device has a drain-to-source breakdown voltage of 30V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 22.7 ns.Its maximum pulsed drain current is 56A, which is also its maximum rating peak drainage current.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 22V.An electrical device's threshold voltage specifies when any of its operations will begin, and this transistor has a threshold voltage of 1V.This device uses no drive voltage (4.5V 10V) to reduce its overall power consumption.

STS14N3LLH5 Features
a continuous drain current (ID) of 7A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 22.7 ns
based on its rated peak drain current 56A.
a threshold voltage of 1V


STS14N3LLH5 Applications
There are a lot of STMicroelectronics
STS14N3LLH5 applications of single MOSFETs transistors.


Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters
STS14N3LLH5 More Descriptions
N-channel 30V - 0.006Y - 14A - SO-8 STripFET™ V Power MOSFET
Transistor MOSFET N-CH 30V 14A 8-Pin SO T/R
MOSFET, N CH, 30V, 14A, SOIC-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 7A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.005ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1V; Power Dissipation Pd: 2.7W; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (17-Dec-2015); Current Id Max: 14A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C; Termination Type: Surface Mount Device; Transistor Type: Power MOSFET; Voltage Vds Typ: 30V; Voltage Vgs Max: 22V; Voltage Vgs Rds on Measurement: 10V
Product Comparison
The three parts on the right have similar specifications to STS14N3LLH5.
  • Image
    Part Number
    Manufacturer
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Resistance
    Subcategory
    Technology
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Reach Compliance Code
    Time@Peak Reflow Temperature-Max (s)
    Base Part Number
    Pin Count
    Qualification Status
    Number of Elements
    Configuration
    Power Dissipation-Max
    Operating Mode
    Power Dissipation
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Pulsed Drain Current-Max (IDM)
    REACH SVHC
    RoHS Status
    Lead Free
    JESD-609 Code
    Terminal Finish
    Voltage - Rated DC
    Current Rating
    Drain to Source Voltage (Vdss)
    Drain-source On Resistance-Max
    Pbfree Code
    Element Configuration
    Turn On Delay Time
    Nominal Vgs
    Radiation Hardening
    View Compare
  • STS14N3LLH5
    STS14N3LLH5
    Surface Mount
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    8
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    STripFET™ V
    Obsolete
    1 (Unlimited)
    8
    EAR99
    6mOhm
    FET General Purpose Power
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    NOT SPECIFIED
    unknown
    NOT SPECIFIED
    STS14
    8
    Not Qualified
    1
    SINGLE WITH BUILT-IN DIODE
    2.7W Tc
    ENHANCEMENT MODE
    2.7W
    N-Channel
    SWITCHING
    6m Ω @ 7A, 10V
    1V @ 250μA
    1500pF @ 25V
    14A Tc
    12nC @ 4.5V
    14.5ns
    4.5V 10V
    ±22V
    4.5 ns
    22.7 ns
    7A
    1V
    22V
    30V
    56A
    No SVHC
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • STS10PF30L
    Surface Mount
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    8
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    STripFET™ II
    Obsolete
    1 (Unlimited)
    8
    EAR99
    -
    Other Transistors
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    260
    -
    30
    STS10
    8
    Not Qualified
    1
    SINGLE WITH BUILT-IN DIODE
    2.5W Tc
    ENHANCEMENT MODE
    2.5W
    P-Channel
    SWITCHING
    14m Ω @ 5A, 10V
    1V @ 250μA
    2300pF @ 25V
    10A Tc
    39nC @ 4.5V
    87ns
    4.5V 10V
    ±16V
    27 ns
    89 ns
    10A
    -
    16V
    -30V
    -
    -
    ROHS3 Compliant
    Lead Free
    e4
    Nickel/Palladium/Gold (Ni/Pd/Au)
    -30V
    -10A
    30V
    -
    -
    -
    -
    -
    -
  • STS17NF3LL
    Surface Mount
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    8
    SILICON
    -55°C~175°C TJ
    Cut Tape (CT)
    STripFET™ II
    Obsolete
    1 (Unlimited)
    8
    EAR99
    -
    FET General Purpose Power
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    260
    -
    30
    STS17
    8
    Not Qualified
    1
    SINGLE WITH BUILT-IN DIODE
    3.2W Tc
    ENHANCEMENT MODE
    3.2W
    N-Channel
    SWITCHING
    5.5m Ω @ 8.5A, 10V
    1V @ 250μA
    2160pF @ 25V
    17A Tc
    35nC @ 4.5V
    39ns
    4.5V 10V
    ±18V
    37 ns
    47.5 ns
    17A
    -
    18V
    30V
    -
    -
    ROHS3 Compliant
    Lead Free
    e4
    Nickel/Palladium/Gold (Ni/Pd/Au)
    30V
    17A
    -
    0.007Ohm
    -
    -
    -
    -
    -
  • STS11N3LLH5
    Surface Mount
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    8
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    STripFET™ V
    Obsolete
    1 (Unlimited)
    8
    EAR99
    13.2mOhm
    FET General Purpose Power
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    260
    -
    30
    STS11
    8
    -
    1
    -
    2.7W Tc
    ENHANCEMENT MODE
    2.7W
    N-Channel
    SWITCHING
    14m Ω @ 5.5A, 10V
    1V @ 250μA
    724pF @ 25V
    11A Tc
    5nC @ 4.5V
    4.2ns
    4.5V 10V
    22V, -20V
    3.5 ns
    21 ns
    11A
    1V
    22V
    30V
    44A
    No SVHC
    ROHS3 Compliant
    Lead Free
    e4
    Nickel/Palladium/Gold (Ni/Pd/Au)
    -
    -
    -
    -
    yes
    Single
    4 ns
    1 V
    No
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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