STMicroelectronics STS12NF30L

Name: STS12NF30L
Brand: STMicroelectronics
SKU: 2488563-STS12NF30L
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: STS12NF30L

Manufacturer:: STMicroelectronics

Ventron No:: 2488563-STS12NF30L

Description:: MOSFET N-CH 30V 12A 8-SOIC

ECAD Model:

Datasheet:: STS12NF30L

Specifications

STMicroelectronics STS12NF30L technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STS12NF30L.

Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154, 3.90mm Width)
Number of Pins
8
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Cut Tape (CT)
Series
STripFET™ II
JESD-609 Code
e4
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
8
ECCN Code
EAR99
Resistance
9mOhm
Terminal Finish
Nickel/Palladium/Gold (Ni/Pd/Au)
Additional Feature
LOW THRESHOLD
Subcategory
FET General Purpose Power
Voltage - Rated DC
30V
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
12A
Time@Peak Reflow Temperature-Max (s)
30
Base Part Number
STS12
Pin Count
8
Number of Elements
1
Row Spacing
6.3 mm
Power Dissipation-Max
2.5W Ta
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
2.5W
Turn On Delay Time
35 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
9m Ω @ 6A, 10V
Vgs(th) (Max) @ Id
1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
2400pF @ 25V
Current - Continuous Drain (Id) @ 25°C
12A Tc
Gate Charge (Qg) (Max) @ Vgs
50nC @ 4.5V
Rise Time
90ns
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±16V
Fall Time (Typ)
35 ns
Turn-Off Delay Time
80 ns
Continuous Drain Current (ID)
12A
Threshold Voltage
1V
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
30V
Dual Supply Voltage
30V
Height
1.25mm
Length
5mm
Width
4.05mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

STS12NF30L Description
The STS12NF30L Power MOSFET has been developed using the STMicroelectronics'unique STripFET process, which is specifically designed to minimize input capacitance and gate charge.

STS12NF30L Features
Standard outline for easy automated surface mount assembly
Low threshold drive

STS12NF30L Applications
High-efficiency isolated DC-DC converter

STS12NF30L More Descriptions

N-Channel 30 V, 0.008 Ohm, 12 A, SO-8 STripFET(TM) II Power MOSFET
MCU 32-Bit Tiva C ARM Cortex M4F RISC 256KB Flash 1.2V/3.3V 144-Pin LQFP T/R
MOSFET, N, LOGIC, SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:12A; Source Voltage Vds:30V; On Resistance Rds(on):0.008ohm;
N Channel Mosfet, 30V, 12A, Soic, Full Reel; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:12A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:1V Rohs Compliant: Yes |Stmicroelectronics STS12NF30L
MOSFET, N, LOGIC, SO-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 12A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.008ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1V; Power Dissipation Pd: 2.5W; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (17-Dec-2015); Current Id Max: 12A; Current Temperature: 25°C; External Depth: 5.2mm; External Length / Height: 1.75mm; External Width: 4.05mm; Full Power Rating Temperature: 25°C; No. of Transistors: 1; On State Resistance @ Vgs = 4.5V: 11mohm; On State resistance @ Vgs = 10V: 9mohm; Pin Configuration: b; Power Dissipation Ptot Max: 2.5W; Pulse Current Idm: 48A; Row Pitch: 6.3mm; SMD Marking: STS12NF30L; Voltage Vds Typ: 30V; Voltage Vgs Max: 1V; Voltage Vgs Rds on Measurement: 10V

Product Comparison

The three parts on the right have similar specifications to STS12NF30L.

Image

Part Number

Manufacturer

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Series

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Resistance

Terminal Finish

Additional Feature

Subcategory

Voltage - Rated DC

Technology

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Current Rating

Time@Peak Reflow Temperature-Max (s)

Base Part Number

Pin Count

Number of Elements

Row Spacing

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Dual Supply Voltage

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Configuration

Drain Current-Max (Abs) (ID)

Reach Compliance Code

Qualification Status

Pulsed Drain Current-Max (IDM)

Avalanche Energy Rating (Eas)

Lifecycle Status

Factory Lead Time

Drain to Source Voltage (Vdss)

View Compare
STS12NF30L

STMicroelectronics

Surface Mount

Surface Mount

8-SOIC (0.154, 3.90mm Width)

8

SILICON

150°C TJ

Cut Tape (CT)

STripFET™ II

e4

yes

Obsolete

1 (Unlimited)

8

EAR99

9mOhm

Nickel/Palladium/Gold (Ni/Pd/Au)

LOW THRESHOLD

FET General Purpose Power

30V

MOSFET (Metal Oxide)

DUAL

GULL WING

260

12A

30

STS12

8

1

6.3 mm

2.5W Ta

Single

ENHANCEMENT MODE

2.5W

35 ns

N-Channel

SWITCHING

9m Ω @ 6A, 10V

1V @ 250μA

2400pF @ 25V

12A Tc

50nC @ 4.5V

90ns

4.5V 10V

±16V

35 ns

80 ns

12A

1V

20V

30V

30V

1.25mm

5mm

4.05mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-
STS1HNK60

STMicroelectronics

Surface Mount

Surface Mount

8-SOIC (0.154, 3.90mm Width)

8

SILICON

-65°C~150°C TJ

Tape & Reel (TR)

SuperMESH™

e4

-

Obsolete

1 (Unlimited)

8

EAR99

-

Nickel/Palladium/Gold (Ni/Pd/Au)

-

FET General Purpose Power

600V

MOSFET (Metal Oxide)

DUAL

GULL WING

260

300mA

30

STS1

8

1

-

2W Tc

-

ENHANCEMENT MODE

2W

6.5 ns

N-Channel

SWITCHING

8.5 Ω @ 500mA, 10V

3.7V @ 250μA

156pF @ 25V

300mA Tc

10nC @ 10V

5ns

10V

±30V

25 ns

-

300mA

-

30V

600V

-

-

-

-

-

No

ROHS3 Compliant

Contains Lead

SINGLE WITH BUILT-IN DIODE

0.3A

-

-

-

-

-

-

-

STS12NF30L vs STS1HNK60
STS15N4LLF5

STMicroelectronics

Surface Mount

Surface Mount

8-SOIC (0.154, 3.90mm Width)

8

SILICON

-55°C~150°C TJ

Cut Tape (CT)

STripFET™ V

e4

-

Obsolete

1 (Unlimited)

8

EAR99

7.6mOhm

Nickel/Palladium/Gold (Ni/Pd/Au)

-

FET General Purpose Power

-

MOSFET (Metal Oxide)

DUAL

GULL WING

260

-

NOT SPECIFIED

STS15

8

1

-

3W Tc

-

ENHANCEMENT MODE

3W

-

N-Channel

SWITCHING

6.7m Ω @ 7.5A, 10V

1V @ 250μA

1570pF @ 25V

15A Tc

12.9nC @ 4.5V

42ns

4.5V 10V

±16V

5.2 ns

37 ns

15A

-

-

40V

-

-

-

-

-

-

ROHS3 Compliant

Lead Free

SINGLE WITH BUILT-IN DIODE

-

unknown

Not Qualified

63.6A

1090 mJ

-

-

-

STS12NF30L vs STS15N4LLF5
STS10P3LLH6

STMicroelectronics

Surface Mount

Surface Mount

8-SOIC (0.154, 3.90mm Width)

8

-

-55°C~150°C TJ

Cut Tape (CT)

STripFET™ H6

-

-

Active

1 (Unlimited)

-

EAR99

-

-

-

Other Transistors

-

MOSFET (Metal Oxide)

-

-

NOT SPECIFIED

-

NOT SPECIFIED

STS10

-

-

-

2.7W Ta

-

-

-

-

P-Channel

-

12m Ω @ 5A, 10V

1V @ 250μA (Min)

3350pF @ 25V

10A Ta

33nC @ 4.5V

-

4.5V 10V

±20V

-

-

10A

-

-

-

-

-

-

-

-

-

ROHS3 Compliant

Lead Free

Single

-

-

-

-

-

ACTIVE (Last Updated: 7 months ago)

20 Weeks

30V

STS12NF30L vs STS10P3LLH6