STMicroelectronics STP8NK100Z

Name: STP8NK100Z
Brand: STMicroelectronics
SKU: 2478477-STP8NK100Z
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: STP8NK100Z

Manufacturer:: STMicroelectronics

Ventron No:: 2478477-STP8NK100Z

Description:: MOSFET N-CH 1000V 6.5A TO-220

ECAD Model:

Datasheet:: STP8NK100Z

Specifications

STMicroelectronics STP8NK100Z technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STP8NK100Z.

Lifecycle Status
ACTIVE (Last Updated: 8 months ago)
Factory Lead Time
12 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Number of Pins
3
Weight
4.535924g
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Series
SuperMESH™
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Resistance
1.85Ohm
Terminal Finish
TIN
Subcategory
FET General Purpose Power
Voltage - Rated DC
1kV
Technology
MOSFET (Metal Oxide)
Current Rating
6.5A
Base Part Number
STP8N
Pin Count
3
Number of Elements
1
Power Dissipation-Max
160W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
160W
Case Connection
ISOLATED
Turn On Delay Time
28 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
1.85 Ω @ 3.15A, 10V
Vgs(th) (Max) @ Id
4.5V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds
2180pF @ 25V
Current - Continuous Drain (Id) @ 25°C
6.5A Tc
Gate Charge (Qg) (Max) @ Vgs
102nC @ 10V
Rise Time
19ns
Drain to Source Voltage (Vdss)
1000V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±30V
Fall Time (Typ)
30 ns
Turn-Off Delay Time
59 ns
Continuous Drain Current (ID)
6.5A
Threshold Voltage
3.75V
JEDEC-95 Code
TO-220AB
Gate to Source Voltage (Vgs)
30V
Drain to Source Breakdown Voltage
1kV
Height
9.15mm
Length
10.4mm
Width
4.6mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

STP8NK100Z Description
The SuperMESHTM series is the result of a thorough optimization of ST's well-known strip-based PowerMESHTM structure. In addition to lowering on-resistance, special attention is paid to ensuring excellent dv/dt capability for the most demanding applications. ST's comprehensive portfolio of high-voltage MOSFETs, including the innovative MDmeshTM devices, is complemented by this series.

STP8NK100Z Features
CAPABILITY FOR EXTREMELY HIGH dv/dt AVALANCHE RATING OF ONE HUNDRED PERCENTAGE ESD CAPABILITY HAS BEEN IMPROVED INTRINSIC CAPACITY IS VERY LOW.

STP8NK100Z Applications
SWITCHING APPLICATION WITH HIGH CURRENT
PERFECT FOR USE WITH OFF-LINE POWER SUPPLIES

STP8NK100Z More Descriptions

MOSFET N-CH 1000V 6.5A TO-220 / Trans MOSFET N-CH 1KV 6.5A 3-Pin(3 Tab) TO-220AB Tube
N-Channel 1 kV 1.85 Ohm Flange Mount SuperMESH MOSFET - TO-220
N-CHANNEL 1000V - 1.60Ohm - 6.5A - TO-220 - TO-220FP
Power MOSFET Transistors N-Ch 1000 V 1.60 Ohm 6.5 A SuperMESH
MOSFET, N, 1000V, 6A, TO-220; Transistor Polarity: N Channel; Continuous Drain Current Id: 4.3A; Drain Source Voltage Vds: 1kV; On Resistance Rds(on): 1.85ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.75V; Power
Power Field-Effect Transistor, 6.5A I(D), 1000V, 1.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Product Comparison

The three parts on the right have similar specifications to STP8NK100Z.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Weight

Transistor Element Material

Operating Temperature

Packaging

Series

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Resistance

Terminal Finish

Subcategory

Voltage - Rated DC

Technology

Current Rating

Base Part Number

Pin Count

Number of Elements

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Case Connection

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

JEDEC-95 Code

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Pbfree Code

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

Avalanche Energy Rating (Eas)

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Surface Mount

Terminal Position

Reach Compliance Code

JESD-30 Code

Qualification Status

Operating Temperature (Max)

Configuration

Polarity/Channel Type

Pulsed Drain Current-Max (IDM)

DS Breakdown Voltage-Min

FET Technology

Power Dissipation-Max (Abs)

View Compare
STP8NK100Z

STMicroelectronics

ACTIVE (Last Updated: 8 months ago)

12 Weeks

Through Hole

Through Hole

TO-220-3

3

4.535924g

SILICON

-55°C~150°C TJ

Tube

SuperMESH™

e3

Active

1 (Unlimited)

3

EAR99

1.85Ohm

TIN

FET General Purpose Power

1kV

MOSFET (Metal Oxide)

6.5A

STP8N

3

1

160W Tc

Single

ENHANCEMENT MODE

160W

ISOLATED

28 ns

N-Channel

SWITCHING

1.85 Ω @ 3.15A, 10V

4.5V @ 100μA

2180pF @ 25V

6.5A Tc

102nC @ 10V

19ns

1000V

10V

±30V

30 ns

59 ns

6.5A

3.75V

TO-220AB

30V

1kV

9.15mm

10.4mm

4.6mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
STP8NM60

STMicroelectronics

-

-

Through Hole

Through Hole

TO-220-3

3

-

SILICON

-55°C~150°C TJ

Tube

MDmesh™

e3

Obsolete

1 (Unlimited)

3

-

-

Matte Tin (Sn) - annealed

FET General Purpose Power

650V

MOSFET (Metal Oxide)

8A

STP8N

3

1

100W Tc

Single

ENHANCEMENT MODE

100W

-

14 ns

N-Channel

SWITCHING

1 Ω @ 2.5A, 10V

5V @ 250μA

400pF @ 25V

8A Tc

18nC @ 10V

10ns

-

10V

±30V

10 ns

23 ns

8A

-

TO-220AB

30V

600V

-

-

-

-

No

ROHS3 Compliant

Lead Free

yes

8A

1Ohm

200 mJ

-

-

-

-

-

-

-

-

-

-

-

-

-

-

STP8NK100Z vs STP8NM60
STP80NF55-08AG

STMicroelectronics

ACTIVE (Last Updated: 7 months ago)

12 Weeks

-

Through Hole

TO-220-3

-

-

-

-55°C~175°C TJ

Tube

Automotive, AEC-Q101, STripFET™

-

Active

1 (Unlimited)

-

-

-

-

-

-

MOSFET (Metal Oxide)

-

STP80N

-

-

300W Tc

-

-

-

-

-

N-Channel

-

8m Ω @ 40A, 10V

4V @ 250μA

3740pF @ 15V

80A Tc

112nC @ 10V

-

55V

10V

±20V

-

-

-

-

-

-

-

-

-

-

-

-

ROHS3 Compliant

-

-

-

-

-

NOT SPECIFIED

NOT SPECIFIED

-

-

-

-

-

-

-

-

-

-

-

-

STP8NK100Z vs STP80NF55-08AG
STP80NF55

STMicroelectronics

-

12 Weeks

-

Through Hole

TO-220-3

-

-

SILICON

-

Tube

-

e3

Active

1 (Unlimited)

3

EAR99

-

Matte Tin (Sn)

FET General Purpose Power

-

-

-

STP80N

3

1

-

-

ENHANCEMENT MODE

-

DRAIN

-

-

SWITCHING

-

-

-

-

-

-

-

-

-

-

-

-

-

TO-220AB

-

-

-

-

-

-

-

ROHS3 Compliant

-

-

80A

0.0065Ohm

1300 mJ

NOT SPECIFIED

NOT SPECIFIED

NO

SINGLE

not_compliant

R-PSFM-T3

Not Qualified

175°C

SINGLE WITH BUILT-IN DIODE

N-CHANNEL

320A

55V

METAL-OXIDE SEMICONDUCTOR

210W

STP8NK100Z vs STP80NF55

Certification

Related parts for STP8NK100Z

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STP8NK100Z Specification

Part Number	Manufacturers	Description	Stock	Price
STP8NK100Z DISTI #	STMicroelectronics	Trans MOSFET N-CH 1KV 6.5A 3-Pin(3 Tab) TO-220 Tub RoHS: Compliant	522	1 $3.471 50 $3.007 100 $2.639 500 $2.278 1000 $2.162
STP8NK100Z DISTI #	STMicroelectronics	MOSFET N-CH 1000V 6.5A TO-220 RoHS: Compliant	1888	1 $4.37 50 $3.5096 100 $3.1976 500 $2.58926 1000 $2.18372
STP8NK100Z DISTI #	STMicroelectronics	Trans MOSFET N-CH 1KV 6.5A 3-Pin(3 Tab) TO-220 Tub RoHS: Compliant	6492	12 $1.1827 100 $1.1412 250 $1.1025 500 $1.0664 1000 $1.0325 2500 $1.0007 5000 $0.9709
STP8NK100Z DISTI #	STMicroelectronics	Trans MOSFET N-CH 1KV 6.5A 3-Pin(3 Tab) TO-220 Tub RoHS: Compliant	522	4 $3.471 50 $3.007 100 $2.639 500 $2.278
STP8NK100Z DISTI #	STMicroelectronics	Trans MOSFET N-CH 1KV 6.5A 3-Pin(3 Tab) TO-220 Tub RoHS: Compliant	4450	1 $3.1 10 $2.6 100 $2.1 250 $2.03 500 $1.95 1000 $1.63
STP8NK100Z DISTI #	STMicroelectronics	Trans MOSFET N-CH 1KV 6.5A 3-Pin(3 Tab) TO-220 Tub RoHS: Compliant	0
STP8NK100Z DISTI #	STMicroelectronics	Trans MOSFET N-CH 1KV 6.5A 3-Pin(3 Tab) TO-220 Tub RoHS: Compliant	0	1000 $2.09 2000 $1.99 4000 $1.89 6000 $1.79 10000 $1.79
STP8NK100Z DISTI #	STMicroelectronics	Power MOSFET, N Channel, 4.3 A, 1 kV, 1.85 ohm, 10	649	1 $3.75 10 $3.19 100 $2.76 500 $2.35
STP8NK100Z DISTI #	STMicroelectronics	MOSFET N-Ch 1000 V 1.60 Ohm Zener SuperMESH 6.5A RoHS: Compliant	974	1 $3.75 10 $3.19 100 $2.76 250 $2.62 500 $2.35
STP5NB100 DISTI #	STMicroelectronics	MOSFET N-Ch 1000 Volt 5 Amp RoHS: Compliant	0
STP8NK100Z DISTI #	STMicroelectronics	MOSFET N-CH 1KV 6.5A SUPERMESH TO220, PK	128	2 $2.84 10 $2.49 20 $2.435 50 $2.38 100 $2.16
STP8NK100Z DISTI #	STMicroelectronics	MOSFET N-CH 1KV 6.5A SUPERMESH TO220, TU	256	10 $2.49 20 $2.435 50 $2.38 100 $2.16
STP8NK100Z DISTI #	STMicroelectronics	Transistor: N-MOSFET, unipolar, 1000V, 4.3A, 1	499	1 $1.94 3 $1.67 10 $1.35 50 $1.22 250 $1.13
STP8NK100Z DISTI #	STMicroelectronics	N-Ch Z-Dio 1000V 6,5A 160W 1,85R TO220 RoHS: Compliant	500	10 $1.55 50 $1.25 200 $1.1 500 $1.05
STP8NK100Z DISTI #	STMicroelectronics	MOSFET, N, 1000V, 6A, TO-220 RoHS: Compliant	649	1 $2.9 10 $2.43 100 $1.97 250 $1.9 500 $1.82
STP8NK100Z DISTI #	STMicroelectronics	Trans MOSFET N-CH 1KV 6.5A 3-Pin(3 Tab) TO-220 Tub RoHS: Compliant	502	1 $2.73
STP8NK100Z DISTI #	STMicroelectronics	Trans MOSFET N-CH 1KV 6.5A 3-Pin(3 Tab) TO-220 Tub RoHS: Compliant	6494	5 $2.4 25 $1.94 100 $1.6 500 $1.47 1000 $1.12 2000 $1.04
STP8NK100Z DISTI #	STMicroelectronics	PowerField-EffectTransistor,6.5AI(D),1000V,1.85ohm RoHS: Compliant	3365	150 $1.07 3365 $1
STP8NK100Z DISTI #	STMicroelectronics	MOSFET, N, 1000V, 6A, TO-220 RoHS: Compliant	825	1 $5.96 10 $5.07 100 $4.38 250 $4.16 500 $3.74 1000 $3.15

STP8NK1~~(1)~~
STP8NK~~(5)~~
STP8N~~(22)~~
STP8~~(65)~~
STP~~(58)~~

STMicroelectronics STP8NK100Z

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