STP80NF55-06

STMicroelectronics STP80NF55-06

Part Number:
STP80NF55-06
Manufacturer:
STMicroelectronics
Ventron No:
2482887-STP80NF55-06
Description:
MOSFET N-CH 55V 80A TO-220
ECAD Model:
Datasheet:
STP80NF55-06

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Specifications
STMicroelectronics STP80NF55-06 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STP80NF55-06.
  • Lifecycle Status
    ACTIVE (Last Updated: 8 months ago)
  • Factory Lead Time
    12 Weeks
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-220-3
  • Number of Pins
    3
  • Weight
    9.071847g
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~175°C TJ
  • Packaging
    Tube
  • Series
    STripFET™ II
  • JESD-609 Code
    e3
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Resistance
    6.5mOhm
  • Terminal Finish
    Matte Tin (Sn)
  • Subcategory
    FET General Purpose Power
  • Voltage - Rated DC
    55V
  • Technology
    MOSFET (Metal Oxide)
  • Current Rating
    80A
  • Base Part Number
    STP80N
  • Pin Count
    3
  • Number of Elements
    1
  • Power Dissipation-Max
    300W Tc
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    300W
  • Case Connection
    DRAIN
  • Turn On Delay Time
    27 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    6.5m Ω @ 40A, 10V
  • Vgs(th) (Max) @ Id
    4V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    4400pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    80A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    189nC @ 10V
  • Rise Time
    155ns
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    65 ns
  • Turn-Off Delay Time
    125 ns
  • Continuous Drain Current (ID)
    80A
  • Threshold Voltage
    3V
  • JEDEC-95 Code
    TO-220AB
  • Gate to Source Voltage (Vgs)
    20V
  • Drain to Source Breakdown Voltage
    55V
  • Height
    9.15mm
  • Length
    10.4mm
  • Width
    4.6mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
STP80NF55-06 Overview
A device's maximum input capacitance is 4400pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 80A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=55V, and this device has a drain-to-source breakdown voltage of 55V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 125 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 27 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.An electrical device's threshold voltage specifies when any of its operations will begin, and this transistor has a threshold voltage of 3V.This device uses no drive voltage (10V) to reduce its overall power consumption.

STP80NF55-06 Features
a continuous drain current (ID) of 80A
a drain-to-source breakdown voltage of 55V voltage
the turn-off delay time is 125 ns
a threshold voltage of 3V


STP80NF55-06 Applications
There are a lot of STMicroelectronics
STP80NF55-06 applications of single MOSFETs transistors.


Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters
STP80NF55-06 More Descriptions
MOSFET N-CH 55V 80A TO-220 / Trans MOSFET N-CH 55V 80A 3-Pin(3 Tab) TO-220AB Tube
N-channel 55 V, 5 mOhm, 80 A TO-220 STripFET(TM) II Power MOSFET
Mosfet, N Channel, 55V, 80A, To-220; Transistor Polarity:N Channel; Drain Source Voltage Vds:55V; Continuous Drain Current Id:80A; On Resistance Rds(On):0.0065Ohm; Transistor Mounting:Through Hole; Rds(On) Test Voltage Vgs:10V Rohs Compliant: Yes |Stmicroelectronics STP80NF55-06
Power Field-Effect Transistor, 80A I(D), 55V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Product Comparison
The three parts on the right have similar specifications to STP80NF55-06.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    JESD-609 Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Resistance
    Terminal Finish
    Subcategory
    Voltage - Rated DC
    Technology
    Current Rating
    Base Part Number
    Pin Count
    Number of Elements
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Case Connection
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    JEDEC-95 Code
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Additional Feature
    JESD-30 Code
    Pulsed Drain Current-Max (IDM)
    Avalanche Energy Rating (Eas)
    Pbfree Code
    Drain Current-Max (Abs) (ID)
    Drain-source On Resistance-Max
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Drain to Source Voltage (Vdss)
    View Compare
  • STP80NF55-06
    STP80NF55-06
    ACTIVE (Last Updated: 8 months ago)
    12 Weeks
    Through Hole
    Through Hole
    TO-220-3
    3
    9.071847g
    SILICON
    -55°C~175°C TJ
    Tube
    STripFET™ II
    e3
    Active
    1 (Unlimited)
    3
    EAR99
    6.5mOhm
    Matte Tin (Sn)
    FET General Purpose Power
    55V
    MOSFET (Metal Oxide)
    80A
    STP80N
    3
    1
    300W Tc
    Single
    ENHANCEMENT MODE
    300W
    DRAIN
    27 ns
    N-Channel
    SWITCHING
    6.5m Ω @ 40A, 10V
    4V @ 250μA
    4400pF @ 25V
    80A Tc
    189nC @ 10V
    155ns
    10V
    ±20V
    65 ns
    125 ns
    80A
    3V
    TO-220AB
    20V
    55V
    9.15mm
    10.4mm
    4.6mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • STP85NF55L
    -
    38 Weeks
    Through Hole
    Through Hole
    TO-220-3
    -
    -
    SILICON
    -55°C~175°C TJ
    Tube
    STripFET™ II
    e3
    Active
    Not Applicable
    3
    EAR99
    8mOhm
    Matte Tin (Sn)
    FET General Purpose Power
    -
    MOSFET (Metal Oxide)
    -
    STP85N
    3
    1
    300W Tc
    Single
    ENHANCEMENT MODE
    300W
    DRAIN
    35 ns
    N-Channel
    SWITCHING
    8m Ω @ 40A, 10V
    2.5V @ 250μA
    4050pF @ 25V
    80A Tc
    110nC @ 5V
    165ns
    5V 10V
    ±15V
    55 ns
    70 ns
    80A
    -
    TO-220AB
    15V
    55V
    -
    -
    -
    -
    No
    ROHS3 Compliant
    Lead Free
    LOGIC LEVEL COMPATIBLE
    R-PSFM-T3
    320A
    980 mJ
    -
    -
    -
    -
    -
    -
  • STP8NM60
    -
    -
    Through Hole
    Through Hole
    TO-220-3
    3
    -
    SILICON
    -55°C~150°C TJ
    Tube
    MDmesh™
    e3
    Obsolete
    1 (Unlimited)
    3
    -
    -
    Matte Tin (Sn) - annealed
    FET General Purpose Power
    650V
    MOSFET (Metal Oxide)
    8A
    STP8N
    3
    1
    100W Tc
    Single
    ENHANCEMENT MODE
    100W
    -
    14 ns
    N-Channel
    SWITCHING
    1 Ω @ 2.5A, 10V
    5V @ 250μA
    400pF @ 25V
    8A Tc
    18nC @ 10V
    10ns
    10V
    ±30V
    10 ns
    23 ns
    8A
    -
    TO-220AB
    30V
    600V
    -
    -
    -
    -
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    200 mJ
    yes
    8A
    1Ohm
    -
    -
    -
  • STP80NF55-08AG
    ACTIVE (Last Updated: 7 months ago)
    12 Weeks
    -
    Through Hole
    TO-220-3
    -
    -
    -
    -55°C~175°C TJ
    Tube
    Automotive, AEC-Q101, STripFET™
    -
    Active
    1 (Unlimited)
    -
    -
    -
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    STP80N
    -
    -
    300W Tc
    -
    -
    -
    -
    -
    N-Channel
    -
    8m Ω @ 40A, 10V
    4V @ 250μA
    3740pF @ 15V
    80A Tc
    112nC @ 10V
    -
    10V
    ±20V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    NOT SPECIFIED
    NOT SPECIFIED
    55V
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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