STMicroelectronics STP80NF55-06
- Part Number:
- STP80NF55-06
- Manufacturer:
- STMicroelectronics
- Ventron No:
- 2482887-STP80NF55-06
- Description:
- MOSFET N-CH 55V 80A TO-220
- Datasheet:
- STP80NF55-06
STMicroelectronics STP80NF55-06 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STP80NF55-06.
- Lifecycle StatusACTIVE (Last Updated: 8 months ago)
- Factory Lead Time12 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-220-3
- Number of Pins3
- Weight9.071847g
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~175°C TJ
- PackagingTube
- SeriesSTripFET™ II
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Resistance6.5mOhm
- Terminal FinishMatte Tin (Sn)
- SubcategoryFET General Purpose Power
- Voltage - Rated DC55V
- TechnologyMOSFET (Metal Oxide)
- Current Rating80A
- Base Part NumberSTP80N
- Pin Count3
- Number of Elements1
- Power Dissipation-Max300W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation300W
- Case ConnectionDRAIN
- Turn On Delay Time27 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs6.5m Ω @ 40A, 10V
- Vgs(th) (Max) @ Id4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds4400pF @ 25V
- Current - Continuous Drain (Id) @ 25°C80A Tc
- Gate Charge (Qg) (Max) @ Vgs189nC @ 10V
- Rise Time155ns
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Fall Time (Typ)65 ns
- Turn-Off Delay Time125 ns
- Continuous Drain Current (ID)80A
- Threshold Voltage3V
- JEDEC-95 CodeTO-220AB
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage55V
- Height9.15mm
- Length10.4mm
- Width4.6mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
STP80NF55-06 Overview
A device's maximum input capacitance is 4400pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 80A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=55V, and this device has a drain-to-source breakdown voltage of 55V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 125 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 27 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.An electrical device's threshold voltage specifies when any of its operations will begin, and this transistor has a threshold voltage of 3V.This device uses no drive voltage (10V) to reduce its overall power consumption.
STP80NF55-06 Features
a continuous drain current (ID) of 80A
a drain-to-source breakdown voltage of 55V voltage
the turn-off delay time is 125 ns
a threshold voltage of 3V
STP80NF55-06 Applications
There are a lot of STMicroelectronics
STP80NF55-06 applications of single MOSFETs transistors.
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters
A device's maximum input capacitance is 4400pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 80A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=55V, and this device has a drain-to-source breakdown voltage of 55V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 125 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 27 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.An electrical device's threshold voltage specifies when any of its operations will begin, and this transistor has a threshold voltage of 3V.This device uses no drive voltage (10V) to reduce its overall power consumption.
STP80NF55-06 Features
a continuous drain current (ID) of 80A
a drain-to-source breakdown voltage of 55V voltage
the turn-off delay time is 125 ns
a threshold voltage of 3V
STP80NF55-06 Applications
There are a lot of STMicroelectronics
STP80NF55-06 applications of single MOSFETs transistors.
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters
STP80NF55-06 More Descriptions
MOSFET N-CH 55V 80A TO-220 / Trans MOSFET N-CH 55V 80A 3-Pin(3 Tab) TO-220AB Tube
N-channel 55 V, 5 mOhm, 80 A TO-220 STripFET(TM) II Power MOSFET
Mosfet, N Channel, 55V, 80A, To-220; Transistor Polarity:N Channel; Drain Source Voltage Vds:55V; Continuous Drain Current Id:80A; On Resistance Rds(On):0.0065Ohm; Transistor Mounting:Through Hole; Rds(On) Test Voltage Vgs:10V Rohs Compliant: Yes |Stmicroelectronics STP80NF55-06
Power Field-Effect Transistor, 80A I(D), 55V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
N-channel 55 V, 5 mOhm, 80 A TO-220 STripFET(TM) II Power MOSFET
Mosfet, N Channel, 55V, 80A, To-220; Transistor Polarity:N Channel; Drain Source Voltage Vds:55V; Continuous Drain Current Id:80A; On Resistance Rds(On):0.0065Ohm; Transistor Mounting:Through Hole; Rds(On) Test Voltage Vgs:10V Rohs Compliant: Yes |Stmicroelectronics STP80NF55-06
Power Field-Effect Transistor, 80A I(D), 55V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
The three parts on the right have similar specifications to STP80NF55-06.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingSeriesJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeResistanceTerminal FinishSubcategoryVoltage - Rated DCTechnologyCurrent RatingBase Part NumberPin CountNumber of ElementsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationCase ConnectionTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageJEDEC-95 CodeGate to Source Voltage (Vgs)Drain to Source Breakdown VoltageHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeAdditional FeatureJESD-30 CodePulsed Drain Current-Max (IDM)Avalanche Energy Rating (Eas)Pbfree CodeDrain Current-Max (Abs) (ID)Drain-source On Resistance-MaxPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Drain to Source Voltage (Vdss)View Compare
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STP80NF55-06ACTIVE (Last Updated: 8 months ago)12 WeeksThrough HoleThrough HoleTO-220-339.071847gSILICON-55°C~175°C TJTubeSTripFET™ IIe3Active1 (Unlimited)3EAR996.5mOhmMatte Tin (Sn)FET General Purpose Power55VMOSFET (Metal Oxide)80ASTP80N31300W TcSingleENHANCEMENT MODE300WDRAIN27 nsN-ChannelSWITCHING6.5m Ω @ 40A, 10V4V @ 250μA4400pF @ 25V80A Tc189nC @ 10V155ns10V±20V65 ns125 ns80A3VTO-220AB20V55V9.15mm10.4mm4.6mmNo SVHCNoROHS3 CompliantLead Free-----------
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-38 WeeksThrough HoleThrough HoleTO-220-3--SILICON-55°C~175°C TJTubeSTripFET™ IIe3ActiveNot Applicable3EAR998mOhmMatte Tin (Sn)FET General Purpose Power-MOSFET (Metal Oxide)-STP85N31300W TcSingleENHANCEMENT MODE300WDRAIN35 nsN-ChannelSWITCHING8m Ω @ 40A, 10V2.5V @ 250μA4050pF @ 25V80A Tc110nC @ 5V165ns5V 10V±15V55 ns70 ns80A-TO-220AB15V55V----NoROHS3 CompliantLead FreeLOGIC LEVEL COMPATIBLER-PSFM-T3320A980 mJ------
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--Through HoleThrough HoleTO-220-33-SILICON-55°C~150°C TJTubeMDmesh™e3Obsolete1 (Unlimited)3--Matte Tin (Sn) - annealedFET General Purpose Power650VMOSFET (Metal Oxide)8ASTP8N31100W TcSingleENHANCEMENT MODE100W-14 nsN-ChannelSWITCHING1 Ω @ 2.5A, 10V5V @ 250μA400pF @ 25V8A Tc18nC @ 10V10ns10V±30V10 ns23 ns8A-TO-220AB30V600V----NoROHS3 CompliantLead Free---200 mJyes8A1Ohm---
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ACTIVE (Last Updated: 7 months ago)12 Weeks-Through HoleTO-220-3----55°C~175°C TJTubeAutomotive, AEC-Q101, STripFET™-Active1 (Unlimited)------MOSFET (Metal Oxide)-STP80N--300W Tc-----N-Channel-8m Ω @ 40A, 10V4V @ 250μA3740pF @ 15V80A Tc112nC @ 10V-10V±20V------------ROHS3 Compliant--------NOT SPECIFIEDNOT SPECIFIED55V
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