STMicroelectronics STP80NF10FP

Name: STP80NF10FP
Brand: STMicroelectronics
SKU: 2480980-STP80NF10FP
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: STP80NF10FP

Manufacturer:: STMicroelectronics

Ventron No:: 2480980-STP80NF10FP

Description:: MOSFET N-CH 100V 38A TO-220FP

ECAD Model:

Datasheet:: STP80NF10FP

Specifications

STMicroelectronics STP80NF10FP technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STP80NF10FP.

Lifecycle Status
ACTIVE (Last Updated: 8 months ago)
Factory Lead Time
12 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Series
STripFET™ II
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Resistance
15MOhm
Terminal Finish
Matte Tin (Sn) - annealed
Subcategory
FET General Purpose Power
Voltage - Rated DC
100V
Technology
MOSFET (Metal Oxide)
Current Rating
80A
Base Part Number
STP80N
Pin Count
3
Number of Elements
1
Number of Channels
1
Power Dissipation-Max
45W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
45W
Case Connection
ISOLATED
Turn On Delay Time
40 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
15m Ω @ 40A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
4300pF @ 25V
Current - Continuous Drain (Id) @ 25°C
38A Tc
Gate Charge (Qg) (Max) @ Vgs
189nC @ 10V
Rise Time
80ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Fall Time (Typ)
60 ns
Turn-Off Delay Time
134 ns
Continuous Drain Current (ID)
40A
Threshold Voltage
3V
JEDEC-95 Code
TO-220AB
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
100V
Max Junction Temperature (Tj)
175°C
Height
20mm
Length
10.4mm
Width
4.6mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

STP80NF10FP Description With STMicroelectronics' unique STripFET process, this Power MOSFET series is specifically designed to minimize input capacitance and gate charge. The STP80NF10FP is therefore ideal for use as the primary switch in advanced high-efficiency isolated DC-DC converters for telecommunications and computer applications. MOSFET STP80NF10FP is also suitable for applications that require a low gate charge.
STP80NF10FP Features 100% Avalanche tested
Exceptional dv/dt capability
Application-oriented characterization
STP80NF10FP Applications Motor Drivers
Battery Chargers
Audio Amplifier Stages
Audio Power Amplifier Circuits
Audio Preamplifiers and Its Stages

STP80NF10FP More Descriptions

N-Channel 100V - 0.012Ohm - 80A - TO-220FP LOW GATE CHARGE STripFET(TM) POWER MOSFET
N-Channel 100 V 15 mO Flange Mount STripFET II Power Mosfet - TO-220FP
Trans MOSFET N-CH 100V 80A 3-Pin(3 Tab) TO-220FP Tube
MOSFET Operating temperature: -55...175 °C Housing type: TO-220FP Polarity: N Power dissipation: 45 W
MOSFET N-Ch 100V 80A UltraFET II TO220FP
MOSFET, N CH, 100V, 38A, TO-220FP; Transistor Polarity: N Channel; Continuous Drain Current Id: 40A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.012ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Po
Power Field-Effect Transistor, 38A I(D), 100V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Product Comparison

The three parts on the right have similar specifications to STP80NF10FP.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Series

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Resistance

Terminal Finish

Subcategory

Voltage - Rated DC

Technology

Current Rating

Base Part Number

Pin Count

Number of Elements

Number of Channels

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Case Connection

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

JEDEC-95 Code

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Max Junction Temperature (Tj)

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Drain to Source Voltage (Vdss)

Weight

Additional Feature

View Compare
STP80NF10FP

STMicroelectronics

ACTIVE (Last Updated: 8 months ago)

12 Weeks

Through Hole

Through Hole

TO-220-3 Full Pack

3

SILICON

-55°C~175°C TJ

Tube

STripFET™ II

e3

Active

1 (Unlimited)

3

EAR99

15MOhm

Matte Tin (Sn) - annealed

FET General Purpose Power

100V

MOSFET (Metal Oxide)

80A

STP80N

3

1

1

45W Tc

Single

ENHANCEMENT MODE

45W

ISOLATED

40 ns

N-Channel

SWITCHING

15m Ω @ 40A, 10V

4V @ 250μA

4300pF @ 25V

38A Tc

189nC @ 10V

80ns

10V

±20V

60 ns

134 ns

40A

3V

TO-220AB

20V

100V

175°C

20mm

10.4mm

4.6mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-
STP80N6F6

STMicroelectronics

ACTIVE (Last Updated: 8 months ago)

-

Through Hole

Through Hole

TO-220-3

3

-

-55°C~175°C TJ

Tube

Automotive, AEC-Q101, DeepGATE™, STripFET™ VI

-

Obsolete

1 (Unlimited)

-

EAR99

5mOhm

-

FET General Purpose Powers

-

MOSFET (Metal Oxide)

-

STP80N

-

-

1

120W Tc

Single

-

-

-

-

N-Channel

-

5.8m Ω @ 50A, 10V

4.5V @ 250μA

7480pF @ 25V

110A Tc

122nC @ 10V

-

10V

±20V

-

-

110A

-

-

20V

60V

-

15.75mm

10.4mm

4.6mm

-

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

STP80NF10FP vs STP80N6F6
STP80NF55-08AG

STMicroelectronics

ACTIVE (Last Updated: 7 months ago)

12 Weeks

-

Through Hole

TO-220-3

-

-

-55°C~175°C TJ

Tube

Automotive, AEC-Q101, STripFET™

-

Active

1 (Unlimited)

-

-

-

-

-

-

MOSFET (Metal Oxide)

-

STP80N

-

-

-

300W Tc

-

-

-

-

-

N-Channel

-

8m Ω @ 40A, 10V

4V @ 250μA

3740pF @ 15V

80A Tc

112nC @ 10V

-

10V

±20V

-

-

-

-

-

-

-

-

-

-

-

-

-

ROHS3 Compliant

-

NOT SPECIFIED

NOT SPECIFIED

55V

-

-

STP80NF10FP vs STP80NF55-08AG
STP80N10F7

STMicroelectronics

ACTIVE (Last Updated: 8 months ago)

13 Weeks

Through Hole

Through Hole

TO-220-3

3

SILICON

-55°C~175°C TJ

Tube

DeepGATE™, STripFET™ VII

-

Active

1 (Unlimited)

3

EAR99

-

-

-

-

MOSFET (Metal Oxide)

-

STP80N

-

2

1

110W Tc

Single

ENHANCEMENT MODE

110W

DRAIN

19 ns

N-Channel

SWITCHING

10m Ω @ 40A, 10V

4.5V @ 250μA

3100pF @ 50V

80A Tc

45nC @ 10V

32ns

10V

±20V

13 ns

36 ns

80A

-

-

20V

100V

-

4.6mm

10.4mm

15.75mm

-

-

ROHS3 Compliant

Lead Free

-

-

-

329.988449mg

ULTRA LOW-ON RESISTANCE

STP80NF10FP vs STP80N10F7