STMicroelectronics STP80NF10
- Part Number:
- STP80NF10
- Manufacturer:
- STMicroelectronics
- Ventron No:
- 2848549-STP80NF10
- Description:
- MOSFET N-CH 100V 80A TO-220
- Datasheet:
- STP80NF10
STMicroelectronics STP80NF10 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STP80NF10.
- Lifecycle StatusACTIVE (Last Updated: 8 months ago)
- Factory Lead Time12 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-220-3
- Number of Pins3
- Weight453.59237kg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~175°C TJ
- PackagingTube
- SeriesSTripFET™ II
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Resistance15mOhm
- Terminal FinishMatte Tin (Sn)
- SubcategoryFET General Purpose Power
- Voltage - Rated DC100V
- TechnologyMOSFET (Metal Oxide)
- Current Rating80A
- Base Part NumberSTP80N
- Pin Count3
- Number of Elements1
- Power Dissipation-Max300W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation300W
- Turn On Delay Time26 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs15m Ω @ 40A, 10V
- Vgs(th) (Max) @ Id4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds5500pF @ 25V
- Current - Continuous Drain (Id) @ 25°C80A Tc
- Gate Charge (Qg) (Max) @ Vgs182nC @ 10V
- Rise Time80ns
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Fall Time (Typ)60 ns
- Turn-Off Delay Time116 ns
- Continuous Drain Current (ID)80A
- Threshold Voltage3V
- JEDEC-95 CodeTO-220AB
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage100V
- Height9.15mm
- Length10.4mm
- Width4.6mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
STP80NF10 Description
The STP80NF10 is a D2PAK low gate charge N-channel 100 V, 0.012, 80 A, TO-220 STripFETTM II Power MOSFET. This Power MOSFET series, manufactured using STMicroelectronics' unique STripFET technology, was created with the goal of reducing input capacitance and gate charge. As a result, it can be used as the principal switch in modern isolated DC-DC converters for telecom and computer applications. It's also suitable for any application requiring a low gate charge drive.
STP80NF10 Features
■ Exceptional dv/dt Capability
■ 100% Avalanche Tested
■ Application Oriented Characterization
■ Typical RDS(on) = 0.012?
■ Low Gate Drive Power
■ Fast Switching Speed
STP80NF10 Applications
■ Switching Applications
■ High-efficiency DC-AC Converters
■ Ups and Motor Control
■ As Switching Devices in Electronic Control Units
■ As Power Converters in Modern Electric Vehicles
■ Power Supplies
The STP80NF10 is a D2PAK low gate charge N-channel 100 V, 0.012, 80 A, TO-220 STripFETTM II Power MOSFET. This Power MOSFET series, manufactured using STMicroelectronics' unique STripFET technology, was created with the goal of reducing input capacitance and gate charge. As a result, it can be used as the principal switch in modern isolated DC-DC converters for telecom and computer applications. It's also suitable for any application requiring a low gate charge drive.
STP80NF10 Features
■ Exceptional dv/dt Capability
■ 100% Avalanche Tested
■ Application Oriented Characterization
■ Typical RDS(on) = 0.012?
■ Low Gate Drive Power
■ Fast Switching Speed
STP80NF10 Applications
■ Switching Applications
■ High-efficiency DC-AC Converters
■ Ups and Motor Control
■ As Switching Devices in Electronic Control Units
■ As Power Converters in Modern Electric Vehicles
■ Power Supplies
STP80NF10 More Descriptions
N-Channel 100V - 0.012Ohm - 80A - TO-220 LOW GATE CHARGE STripFET(TM) MOSFET
Trans MOSFET N-CH 100V 80A 3-Pin(3 Tab) TO-220AB Tube / MOSFET N-CH 100V 38A TO-220FP
N-Channel 100 V 15 mOhm Flange Mount STripFET II Power MOSFET - TO-220
Transistor Polarity:n Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:80A; On Resistance Rds(On):0.012Ohm; Transistor Mounting:through Hole; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Product Range:- Rohs Compliant: Yes
Power Field-Effect Transistor, 80A I(D), 100V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Trans MOSFET N-CH 100V 80A 3-Pin(3 Tab) TO-220AB Tube / MOSFET N-CH 100V 38A TO-220FP
N-Channel 100 V 15 mOhm Flange Mount STripFET II Power MOSFET - TO-220
Transistor Polarity:n Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:80A; On Resistance Rds(On):0.012Ohm; Transistor Mounting:through Hole; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Product Range:- Rohs Compliant: Yes
Power Field-Effect Transistor, 80A I(D), 100V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
The three parts on the right have similar specifications to STP80NF10.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingSeriesJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeResistanceTerminal FinishSubcategoryVoltage - Rated DCTechnologyCurrent RatingBase Part NumberPin CountNumber of ElementsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageJEDEC-95 CodeGate to Source Voltage (Vgs)Drain to Source Breakdown VoltageHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeSurface MountTerminal PositionPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)JESD-30 CodeQualification StatusOperating Temperature (Max)ConfigurationCase ConnectionPolarity/Channel TypeDrain Current-Max (Abs) (ID)Drain-source On Resistance-MaxPulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinAvalanche Energy Rating (Eas)FET TechnologyPower Dissipation-Max (Abs)Additional FeatureNumber of ChannelsView Compare
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STP80NF10ACTIVE (Last Updated: 8 months ago)12 WeeksThrough HoleThrough HoleTO-220-33453.59237kgSILICON-55°C~175°C TJTubeSTripFET™ IIe3Active1 (Unlimited)3EAR9915mOhmMatte Tin (Sn)FET General Purpose Power100VMOSFET (Metal Oxide)80ASTP80N31300W TcSingleENHANCEMENT MODE300W26 nsN-ChannelSWITCHING15m Ω @ 40A, 10V4V @ 250μA5500pF @ 25V80A Tc182nC @ 10V80ns10V±20V60 ns116 ns80A3VTO-220AB20V100V9.15mm10.4mm4.6mmNo SVHCNoROHS3 CompliantLead Free---------------------
-
-12 Weeks-Through HoleTO-220-3--SILICON-Tube-e3Active1 (Unlimited)3EAR99-Matte Tin (Sn)FET General Purpose Power---STP80N31--ENHANCEMENT MODE---SWITCHING------------TO-220AB-------ROHS3 Compliant-NOSINGLENOT SPECIFIEDnot_compliantNOT SPECIFIEDR-PSFM-T3Not Qualified175°CSINGLE WITH BUILT-IN DIODEDRAINN-CHANNEL80A0.0065Ohm320A55V1300 mJMETAL-OXIDE SEMICONDUCTOR210W--
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ACTIVE (Last Updated: 8 months ago)12 WeeksThrough HoleThrough HoleTO-220-339.071847gSILICON-55°C~175°C TJTubeSTripFET™ IIe3Active1 (Unlimited)3EAR998mOhmMatte Tin (Sn)FET General Purpose Power55VMOSFET (Metal Oxide)80ASTP85N31300W TcSingleENHANCEMENT MODE300W25 nsN-ChannelSWITCHING8m Ω @ 40A, 10V4V @ 250μA3700pF @ 25V80A Tc150nC @ 10V100ns10V±20V35 ns70 ns80A3VTO-220AB20V55V6.35mm38.1mm12.7mmNo SVHCNoROHS3 CompliantLead Free---------DRAIN-----980 mJ----
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ACTIVE (Last Updated: 8 months ago)13 WeeksThrough HoleThrough HoleTO-220-33329.988449mgSILICON-55°C~175°C TJTubeDeepGATE™, STripFET™ VII-Active1 (Unlimited)3EAR99----MOSFET (Metal Oxide)-STP80N-2110W TcSingleENHANCEMENT MODE110W19 nsN-ChannelSWITCHING10m Ω @ 40A, 10V4.5V @ 250μA3100pF @ 50V80A Tc45nC @ 10V32ns10V±20V13 ns36 ns80A--20V100V4.6mm10.4mm15.75mm--ROHS3 CompliantLead Free---------DRAIN--------ULTRA LOW-ON RESISTANCE1
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