STMicroelectronics STP80NF10

Name: STP80NF10
Brand: STMicroelectronics
SKU: 2848549-STP80NF10
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: STP80NF10

Manufacturer:: STMicroelectronics

Ventron No:: 2848549-STP80NF10

Description:: MOSFET N-CH 100V 80A TO-220

ECAD Model:

Datasheet:: STP80NF10

Specifications

STMicroelectronics STP80NF10 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STP80NF10.

Lifecycle Status
ACTIVE (Last Updated: 8 months ago)
Factory Lead Time
12 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Number of Pins
3
Weight
453.59237kg
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Series
STripFET™ II
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Resistance
15mOhm
Terminal Finish
Matte Tin (Sn)
Subcategory
FET General Purpose Power
Voltage - Rated DC
100V
Technology
MOSFET (Metal Oxide)
Current Rating
80A
Base Part Number
STP80N
Pin Count
3
Number of Elements
1
Power Dissipation-Max
300W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
300W
Turn On Delay Time
26 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
15m Ω @ 40A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
5500pF @ 25V
Current - Continuous Drain (Id) @ 25°C
80A Tc
Gate Charge (Qg) (Max) @ Vgs
182nC @ 10V
Rise Time
80ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Fall Time (Typ)
60 ns
Turn-Off Delay Time
116 ns
Continuous Drain Current (ID)
80A
Threshold Voltage
3V
JEDEC-95 Code
TO-220AB
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
100V
Height
9.15mm
Length
10.4mm
Width
4.6mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

STP80NF10 Description

The STP80NF10 is a D2PAK low gate charge N-channel 100 V, 0.012, 80 A, TO-220 STripFETTM II Power MOSFET. This Power MOSFET series, manufactured using STMicroelectronics' unique STripFET technology, was created with the goal of reducing input capacitance and gate charge. As a result, it can be used as the principal switch in modern isolated DC-DC converters for telecom and computer applications. It's also suitable for any application requiring a low gate charge drive.

STP80NF10 Features

■ Exceptional dv/dt Capability

■ 100% Avalanche Tested

■ Application Oriented Characterization

■ Typical RDS(on) = 0.012?

■ Low Gate Drive Power

■ Fast Switching Speed

STP80NF10 Applications

■ Switching Applications

■ High-efficiency DC-AC Converters

■ Ups and Motor Control

■ As Switching Devices in Electronic Control Units

■ As Power Converters in Modern Electric Vehicles

■ Power Supplies

STP80NF10 More Descriptions

N-Channel 100V - 0.012Ohm - 80A - TO-220 LOW GATE CHARGE STripFET(TM) MOSFET
Trans MOSFET N-CH 100V 80A 3-Pin(3 Tab) TO-220AB Tube / MOSFET N-CH 100V 38A TO-220FP
N-Channel 100 V 15 mOhm Flange Mount STripFET II Power MOSFET - TO-220
Transistor Polarity:n Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:80A; On Resistance Rds(On):0.012Ohm; Transistor Mounting:through Hole; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Product Range:- Rohs Compliant: Yes
Power Field-Effect Transistor, 80A I(D), 100V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Product Comparison

The three parts on the right have similar specifications to STP80NF10.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Weight

Transistor Element Material

Operating Temperature

Packaging

Series

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Resistance

Terminal Finish

Subcategory

Voltage - Rated DC

Technology

Current Rating

Base Part Number

Pin Count

Number of Elements

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

JEDEC-95 Code

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Surface Mount

Terminal Position

Peak Reflow Temperature (Cel)

Reach Compliance Code

Time@Peak Reflow Temperature-Max (s)

JESD-30 Code

Qualification Status

Operating Temperature (Max)

Configuration

Case Connection

Polarity/Channel Type

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

Pulsed Drain Current-Max (IDM)

DS Breakdown Voltage-Min

Avalanche Energy Rating (Eas)

FET Technology

Power Dissipation-Max (Abs)

Additional Feature

Number of Channels

View Compare
STP80NF10

STMicroelectronics

ACTIVE (Last Updated: 8 months ago)

12 Weeks

Through Hole

Through Hole

TO-220-3

3

453.59237kg

SILICON

-55°C~175°C TJ

Tube

STripFET™ II

e3

Active

1 (Unlimited)

3

EAR99

15mOhm

Matte Tin (Sn)

FET General Purpose Power

100V

MOSFET (Metal Oxide)

80A

STP80N

3

1

300W Tc

Single

ENHANCEMENT MODE

300W

26 ns

N-Channel

SWITCHING

15m Ω @ 40A, 10V

4V @ 250μA

5500pF @ 25V

80A Tc

182nC @ 10V

80ns

10V

±20V

60 ns

116 ns

80A

3V

TO-220AB

20V

100V

9.15mm

10.4mm

4.6mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
STP80NF55

STMicroelectronics

-

12 Weeks

-

Through Hole

TO-220-3

-

-

SILICON

-

Tube

-

e3

Active

1 (Unlimited)

3

EAR99

-

Matte Tin (Sn)

FET General Purpose Power

-

-

-

STP80N

3

1

-

-

ENHANCEMENT MODE

-

-

-

SWITCHING

-

-

-

-

-

-

-

-

-

-

-

-

TO-220AB

-

-

-

-

-

-

-

ROHS3 Compliant

-

NO

SINGLE

NOT SPECIFIED

not_compliant

NOT SPECIFIED

R-PSFM-T3

Not Qualified

175°C

SINGLE WITH BUILT-IN DIODE

DRAIN

N-CHANNEL

80A

0.0065Ohm

320A

55V

1300 mJ

METAL-OXIDE SEMICONDUCTOR

210W

-

-

STP80NF10 vs STP80NF55
STP85NF55

STMicroelectronics

ACTIVE (Last Updated: 8 months ago)

12 Weeks

Through Hole

Through Hole

TO-220-3

3

9.071847g

SILICON

-55°C~175°C TJ

Tube

STripFET™ II

e3

Active

1 (Unlimited)

3

EAR99

8mOhm

Matte Tin (Sn)

FET General Purpose Power

55V

MOSFET (Metal Oxide)

80A

STP85N

3

1

300W Tc

Single

ENHANCEMENT MODE

300W

25 ns

N-Channel

SWITCHING

8m Ω @ 40A, 10V

4V @ 250μA

3700pF @ 25V

80A Tc

150nC @ 10V

100ns

10V

±20V

35 ns

70 ns

80A

3V

TO-220AB

20V

55V

6.35mm

38.1mm

12.7mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

DRAIN

-

-

-

-

-

980 mJ

-

-

-

-

STP80NF10 vs STP85NF55
STP80N10F7

STMicroelectronics

ACTIVE (Last Updated: 8 months ago)

13 Weeks

Through Hole

Through Hole

TO-220-3

3

329.988449mg

SILICON

-55°C~175°C TJ

Tube

DeepGATE™, STripFET™ VII

-

Active

1 (Unlimited)

3

EAR99

-

-

-

-

MOSFET (Metal Oxide)

-

STP80N

-

2

110W Tc

Single

ENHANCEMENT MODE

110W

19 ns

N-Channel

SWITCHING

10m Ω @ 40A, 10V

4.5V @ 250μA

3100pF @ 50V

80A Tc

45nC @ 10V

32ns

10V

±20V

13 ns

36 ns

80A

-

-

20V

100V

4.6mm

10.4mm

15.75mm

-

-

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

DRAIN

-

-

-

-

-

-

-

-

ULTRA LOW-ON RESISTANCE

1

STP80NF10 vs STP80N10F7