STMicroelectronics STP80NF03L
- Part Number:
- STP80NF03L
- Manufacturer:
- STMicroelectronics
- Ventron No:
- 2488537-STP80NF03L
- Description:
- MOSFET N-CH 30V 80A TO-220
- Datasheet:
- STP80NF03L
STMicroelectronics STP80NF03L technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STP80NF03L.
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-220-3
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature175°C TJ
- PackagingTube
- SeriesSTripFET™ II
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTIN
- Voltage - Rated DC30V
- TechnologyMOSFET (Metal Oxide)
- Current Rating80A
- Base Part NumberSTP80N
- Pin Count3
- Number of Elements1
- Power Dissipation-Max300W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation300W
- Turn On Delay Time30 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs4.5m Ω @ 40A, 10V
- Vgs(th) (Max) @ Id2.5V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds5500pF @ 25V
- Current - Continuous Drain (Id) @ 25°C80A Tc
- Gate Charge (Qg) (Max) @ Vgs110nC @ 4.5V
- Rise Time270ns
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±20V
- Fall Time (Typ)95 ns
- Turn-Off Delay Time1.12 μs
- Continuous Drain Current (ID)80A
- JEDEC-95 CodeTO-220AB
- Gate to Source Voltage (Vgs)20V
- Drain-source On Resistance-Max0.0065Ohm
- Drain to Source Breakdown Voltage30V
- Height9.15mm
- Length10.4mm
- Width4.6mm
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
STP80NF03L Description
The STP80NF03L is an N-CHANNEL 30V - 0.004 ? - 80A TO-220 STripFET? II MOSFET.
STP80NF03L Features
Typical RDS(on) = 0.004 ?
Exceptional dv/dt Capability
100% Avalanche Tested
Low threshold Drive
STP80NF03L Applications
High current, High-speed switching Motor control, Audio amplifiers DC-DC & DC-AC converters
The STP80NF03L is an N-CHANNEL 30V - 0.004 ? - 80A TO-220 STripFET? II MOSFET.
STP80NF03L Features
Typical RDS(on) = 0.004 ?
Exceptional dv/dt Capability
100% Avalanche Tested
Low threshold Drive
STP80NF03L Applications
High current, High-speed switching Motor control, Audio amplifiers DC-DC & DC-AC converters
STP80NF03L More Descriptions
Trans MOSFET N-CH 30V 80A 3-Pin(3 Tab) TO-220 Tube
MOSFET N-Channel 30V 80A TO220
Power Field-Effect Transistor, 80A I(D), 30V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Not available to order N-Ch 30 Volt 80 Amp
IC REG BCK ADJ 4A/2A DL 16HTSSOP
MOSFET N-Channel 30V 80A TO220
Power Field-Effect Transistor, 80A I(D), 30V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Not available to order N-Ch 30 Volt 80 Amp
IC REG BCK ADJ 4A/2A DL 16HTSSOP
The three parts on the right have similar specifications to STP80NF03L.
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ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingSeriesJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishVoltage - Rated DCTechnologyCurrent RatingBase Part NumberPin CountNumber of ElementsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)JEDEC-95 CodeGate to Source Voltage (Vgs)Drain-source On Resistance-MaxDrain to Source Breakdown VoltageHeightLengthWidthRadiation HardeningRoHS StatusLead FreeLifecycle StatusResistanceSubcategoryNumber of ChannelsFactory Lead TimeAdditional FeatureJESD-30 CodeCase ConnectionPulsed Drain Current-Max (IDM)Avalanche Energy Rating (Eas)Drain Current-Max (Abs) (ID)View Compare
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STP80NF03LThrough HoleThrough HoleTO-220-33SILICON175°C TJTubeSTripFET™ IIe3yesObsolete1 (Unlimited)3EAR99TIN30VMOSFET (Metal Oxide)80ASTP80N31300W TcSingleENHANCEMENT MODE300W30 nsN-ChannelSWITCHING4.5m Ω @ 40A, 10V2.5V @ 250μA5500pF @ 25V80A Tc110nC @ 4.5V270ns4.5V 10V±20V95 ns1.12 μs80ATO-220AB20V0.0065Ohm30V9.15mm10.4mm4.6mmNoROHS3 CompliantLead Free------------
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Through HoleThrough HoleTO-220-33--55°C~175°C TJTubeAutomotive, AEC-Q101, DeepGATE™, STripFET™ VI--Obsolete1 (Unlimited)-EAR99--MOSFET (Metal Oxide)-STP80N--120W TcSingle---N-Channel-5.8m Ω @ 50A, 10V4.5V @ 250μA7480pF @ 25V110A Tc122nC @ 10V-10V±20V--110A-20V-60V15.75mm10.4mm4.6mmNoROHS3 CompliantLead FreeACTIVE (Last Updated: 8 months ago)5mOhmFET General Purpose Powers1-------
-
Through HoleThrough HoleTO-220-3-SILICON-55°C~175°C TJTubeSTripFET™ IIe3-ActiveNot Applicable3EAR99Matte Tin (Sn)-MOSFET (Metal Oxide)-STP85N31300W TcSingleENHANCEMENT MODE300W35 nsN-ChannelSWITCHING8m Ω @ 40A, 10V2.5V @ 250μA4050pF @ 25V80A Tc110nC @ 5V165ns5V 10V±15V55 ns70 ns80ATO-220AB15V-55V---NoROHS3 CompliantLead Free-8mOhmFET General Purpose Power-38 WeeksLOGIC LEVEL COMPATIBLER-PSFM-T3DRAIN320A980 mJ-
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Through HoleThrough HoleTO-220-33SILICON-55°C~150°C TJTubeMDmesh™e3yesObsolete1 (Unlimited)3-Matte Tin (Sn) - annealed650VMOSFET (Metal Oxide)8ASTP8N31100W TcSingleENHANCEMENT MODE100W14 nsN-ChannelSWITCHING1 Ω @ 2.5A, 10V5V @ 250μA400pF @ 25V8A Tc18nC @ 10V10ns10V±30V10 ns23 ns8ATO-220AB30V1Ohm600V---NoROHS3 CompliantLead Free--FET General Purpose Power------200 mJ8A
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