STP80NF03L

STMicroelectronics STP80NF03L

Part Number:
STP80NF03L
Manufacturer:
STMicroelectronics
Ventron No:
2488537-STP80NF03L
Description:
MOSFET N-CH 30V 80A TO-220
ECAD Model:
Datasheet:
STP80NF03L

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Specifications
STMicroelectronics STP80NF03L technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STP80NF03L.
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-220-3
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    175°C TJ
  • Packaging
    Tube
  • Series
    STripFET™ II
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Terminal Finish
    TIN
  • Voltage - Rated DC
    30V
  • Technology
    MOSFET (Metal Oxide)
  • Current Rating
    80A
  • Base Part Number
    STP80N
  • Pin Count
    3
  • Number of Elements
    1
  • Power Dissipation-Max
    300W Tc
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    300W
  • Turn On Delay Time
    30 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    4.5m Ω @ 40A, 10V
  • Vgs(th) (Max) @ Id
    2.5V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    5500pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    80A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    110nC @ 4.5V
  • Rise Time
    270ns
  • Drive Voltage (Max Rds On,Min Rds On)
    4.5V 10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    95 ns
  • Turn-Off Delay Time
    1.12 μs
  • Continuous Drain Current (ID)
    80A
  • JEDEC-95 Code
    TO-220AB
  • Gate to Source Voltage (Vgs)
    20V
  • Drain-source On Resistance-Max
    0.0065Ohm
  • Drain to Source Breakdown Voltage
    30V
  • Height
    9.15mm
  • Length
    10.4mm
  • Width
    4.6mm
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
STP80NF03L Description

The STP80NF03L is an N-CHANNEL 30V - 0.004 ? - 80A TO-220 STripFET? II MOSFET.

STP80NF03L Features
Typical RDS(on) = 0.004 ? 
Exceptional dv/dt Capability
100% Avalanche Tested
Low threshold Drive

STP80NF03L Applications
High current, High-speed switching Motor control, Audio amplifiers DC-DC & DC-AC converters
STP80NF03L More Descriptions
Trans MOSFET N-CH 30V 80A 3-Pin(3 Tab) TO-220 Tube
MOSFET N-Channel 30V 80A TO220
Power Field-Effect Transistor, 80A I(D), 30V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Not available to order N-Ch 30 Volt 80 Amp
IC REG BCK ADJ 4A/2A DL 16HTSSOP
Product Comparison
The three parts on the right have similar specifications to STP80NF03L.
  • Image
    Part Number
    Manufacturer
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    Voltage - Rated DC
    Technology
    Current Rating
    Base Part Number
    Pin Count
    Number of Elements
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    JEDEC-95 Code
    Gate to Source Voltage (Vgs)
    Drain-source On Resistance-Max
    Drain to Source Breakdown Voltage
    Height
    Length
    Width
    Radiation Hardening
    RoHS Status
    Lead Free
    Lifecycle Status
    Resistance
    Subcategory
    Number of Channels
    Factory Lead Time
    Additional Feature
    JESD-30 Code
    Case Connection
    Pulsed Drain Current-Max (IDM)
    Avalanche Energy Rating (Eas)
    Drain Current-Max (Abs) (ID)
    View Compare
  • STP80NF03L
    STP80NF03L
    Through Hole
    Through Hole
    TO-220-3
    3
    SILICON
    175°C TJ
    Tube
    STripFET™ II
    e3
    yes
    Obsolete
    1 (Unlimited)
    3
    EAR99
    TIN
    30V
    MOSFET (Metal Oxide)
    80A
    STP80N
    3
    1
    300W Tc
    Single
    ENHANCEMENT MODE
    300W
    30 ns
    N-Channel
    SWITCHING
    4.5m Ω @ 40A, 10V
    2.5V @ 250μA
    5500pF @ 25V
    80A Tc
    110nC @ 4.5V
    270ns
    4.5V 10V
    ±20V
    95 ns
    1.12 μs
    80A
    TO-220AB
    20V
    0.0065Ohm
    30V
    9.15mm
    10.4mm
    4.6mm
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • STP80N6F6
    Through Hole
    Through Hole
    TO-220-3
    3
    -
    -55°C~175°C TJ
    Tube
    Automotive, AEC-Q101, DeepGATE™, STripFET™ VI
    -
    -
    Obsolete
    1 (Unlimited)
    -
    EAR99
    -
    -
    MOSFET (Metal Oxide)
    -
    STP80N
    -
    -
    120W Tc
    Single
    -
    -
    -
    N-Channel
    -
    5.8m Ω @ 50A, 10V
    4.5V @ 250μA
    7480pF @ 25V
    110A Tc
    122nC @ 10V
    -
    10V
    ±20V
    -
    -
    110A
    -
    20V
    -
    60V
    15.75mm
    10.4mm
    4.6mm
    No
    ROHS3 Compliant
    Lead Free
    ACTIVE (Last Updated: 8 months ago)
    5mOhm
    FET General Purpose Powers
    1
    -
    -
    -
    -
    -
    -
    -
  • STP85NF55L
    Through Hole
    Through Hole
    TO-220-3
    -
    SILICON
    -55°C~175°C TJ
    Tube
    STripFET™ II
    e3
    -
    Active
    Not Applicable
    3
    EAR99
    Matte Tin (Sn)
    -
    MOSFET (Metal Oxide)
    -
    STP85N
    3
    1
    300W Tc
    Single
    ENHANCEMENT MODE
    300W
    35 ns
    N-Channel
    SWITCHING
    8m Ω @ 40A, 10V
    2.5V @ 250μA
    4050pF @ 25V
    80A Tc
    110nC @ 5V
    165ns
    5V 10V
    ±15V
    55 ns
    70 ns
    80A
    TO-220AB
    15V
    -
    55V
    -
    -
    -
    No
    ROHS3 Compliant
    Lead Free
    -
    8mOhm
    FET General Purpose Power
    -
    38 Weeks
    LOGIC LEVEL COMPATIBLE
    R-PSFM-T3
    DRAIN
    320A
    980 mJ
    -
  • STP8NM60
    Through Hole
    Through Hole
    TO-220-3
    3
    SILICON
    -55°C~150°C TJ
    Tube
    MDmesh™
    e3
    yes
    Obsolete
    1 (Unlimited)
    3
    -
    Matte Tin (Sn) - annealed
    650V
    MOSFET (Metal Oxide)
    8A
    STP8N
    3
    1
    100W Tc
    Single
    ENHANCEMENT MODE
    100W
    14 ns
    N-Channel
    SWITCHING
    1 Ω @ 2.5A, 10V
    5V @ 250μA
    400pF @ 25V
    8A Tc
    18nC @ 10V
    10ns
    10V
    ±30V
    10 ns
    23 ns
    8A
    TO-220AB
    30V
    1Ohm
    600V
    -
    -
    -
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    FET General Purpose Power
    -
    -
    -
    -
    -
    -
    200 mJ
    8A
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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