STMicroelectronics STP80NE03L-06

Name: STP80NE03L-06
Brand: STMicroelectronics
SKU: 2488012-STP80NE03L-06
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: STP80NE03L-06

Manufacturer:: STMicroelectronics

Ventron No:: 2488012-STP80NE03L-06

Description:: MOSFET N-CH 30V 80A TO220

ECAD Model:

Datasheet:: STP80NE03L-06

Specifications

STMicroelectronics STP80NE03L-06 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STP80NE03L-06.

Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Transistor Element Material
SILICON
Operating Temperature
175°C TJ
Packaging
Tube
JESD-609 Code
e3
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Additional Feature
AVALANCHE RATED
Subcategory
FET General Purpose Power
Voltage - Rated DC
30V
Technology
MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)
245
Reach Compliance Code
not_compliant
Current Rating
80A
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Base Part Number
STP80N
Pin Count
3
JESD-30 Code
R-PSFM-T3
Qualification Status
Not Qualified
Number of Elements
1
Power Dissipation-Max
150W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
150W
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
6m Ω @ 40A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
8700pF @ 25V
Current - Continuous Drain (Id) @ 25°C
80A Tc
Gate Charge (Qg) (Max) @ Vgs
130nC @ 5V
Rise Time
260ns
Drive Voltage (Max Rds On,Min Rds On)
5V 10V
Vgs (Max)
±22V
Fall Time (Typ)
165 ns
Continuous Drain Current (ID)
80A
JEDEC-95 Code
TO-220AB
Gate to Source Voltage (Vgs)
22V
Drain-source On Resistance-Max
0.009Ohm
Drain to Source Breakdown Voltage
30V
Pulsed Drain Current-Max (IDM)
320A
Avalanche Energy Rating (Eas)
600 mJ
Feedback Cap-Max (Crss)
700 pF
Turn On Time-Max (ton)
405ns
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

STP80NE03L-06 Overview
Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 600 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 8700pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 80A.With a drain-source breakdown voltage of 30V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 30V.Peak drain current for this device is 320A, which is its maximum pulsed drain current.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.Using drive voltage (5V 10V) reduces this device's overall power consumption.

STP80NE03L-06 Features
the avalanche energy rating (Eas) is 600 mJ
a continuous drain current (ID) of 80A
a drain-to-source breakdown voltage of 30V voltage
based on its rated peak drain current 320A.

STP80NE03L-06 Applications
There are a lot of STMicroelectronics
STP80NE03L-06 applications of single MOSFETs transistors.

Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification

STP80NE03L-06 More Descriptions

N-Channel 30V - 0.005 Ohm - 80A - TO-220 STripFET MOSFET
Power Field-Effect Transistor, 80A I(D), 30V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:80A; On-Resistance, Rds(on):0.006ohm; Rds(on) Test Voltage, Vgs:10V; Leaded Process Compatible:Yes; Mounting Type:Through Hole; Package/Case:TO-220 RoHS Compliant: Yes
MOSFET, N LOGIC TO-220; Transistor type:MOSFET; Current, Id cont:80A; Resistance, Rds on:0.006ohm; Case style:TO-220 (SOT-78B); Case style, alternate:SOT-78B; Current, Idm pulse:320A; Pins, No. of:3; Pitch, lead:2.54mm; Power dissipation:150W; Power, Pd:150W; Power, Ptot:150W; Temperature, current:25°C; Temperature, full power rating:25°C; Transistor polarity:N; Transistors, No. of:1; Voltage, Vds:30V; Voltage, Vds max:30V; Voltage, Vgs th max:2.5V

Product Comparison

The three parts on the right have similar specifications to STP80NE03L-06.

Image

Part Number

Manufacturer

Mount

Mounting Type

Package / Case

Transistor Element Material

Operating Temperature

Packaging

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Additional Feature

Subcategory

Voltage - Rated DC

Technology

Peak Reflow Temperature (Cel)

Reach Compliance Code

Current Rating

Time@Peak Reflow Temperature-Max (s)

Base Part Number

Pin Count

JESD-30 Code

Qualification Status

Number of Elements

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Continuous Drain Current (ID)

JEDEC-95 Code

Gate to Source Voltage (Vgs)

Drain-source On Resistance-Max

Drain to Source Breakdown Voltage

Pulsed Drain Current-Max (IDM)

Avalanche Energy Rating (Eas)

Feedback Cap-Max (Crss)

Turn On Time-Max (ton)

RoHS Status

Lead Free

Number of Pins

Series

Pbfree Code

Turn On Delay Time

Turn-Off Delay Time

Drain Current-Max (Abs) (ID)

Radiation Hardening

Lifecycle Status

Factory Lead Time

Drain to Source Voltage (Vdss)

Surface Mount

Terminal Position

Operating Temperature (Max)

Configuration

Case Connection

Polarity/Channel Type

DS Breakdown Voltage-Min

FET Technology

Power Dissipation-Max (Abs)

View Compare
STP80NE03L-06

STMicroelectronics

Through Hole

Through Hole

TO-220-3

SILICON

175°C TJ

Tube

e3

Obsolete

1 (Unlimited)

3

EAR99

Matte Tin (Sn)

AVALANCHE RATED

FET General Purpose Power

30V

MOSFET (Metal Oxide)

245

not_compliant

80A

NOT SPECIFIED

STP80N

3

R-PSFM-T3

Not Qualified

1

150W Tc

Single

ENHANCEMENT MODE

150W

N-Channel

SWITCHING

6m Ω @ 40A, 10V

2.5V @ 250μA

8700pF @ 25V

80A Tc

130nC @ 5V

260ns

5V 10V

±22V

165 ns

80A

TO-220AB

22V

0.009Ohm

30V

320A

600 mJ

700 pF

405ns

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
STP8NM60

STMicroelectronics

Through Hole

Through Hole

TO-220-3

SILICON

-55°C~150°C TJ

Tube

e3

Obsolete

1 (Unlimited)

3

-

Matte Tin (Sn) - annealed

-

FET General Purpose Power

650V

MOSFET (Metal Oxide)

-

-

8A

-

STP8N

3

-

-

1

100W Tc

Single

ENHANCEMENT MODE

100W

N-Channel

SWITCHING

1 Ω @ 2.5A, 10V

5V @ 250μA

400pF @ 25V

8A Tc

18nC @ 10V

10ns

10V

±30V

10 ns

8A

TO-220AB

30V

1Ohm

600V

-

200 mJ

-

-

ROHS3 Compliant

Lead Free

3

MDmesh™

yes

14 ns

23 ns

8A

No

-

-

-

-

-

-

-

-

-

-

-

-

STP80NE03L-06 vs STP8NM60
STP80NF55-08AG

STMicroelectronics

-

Through Hole

TO-220-3

-

-55°C~175°C TJ

Tube

-

Active

1 (Unlimited)

-

-

-

-

-

-

MOSFET (Metal Oxide)

NOT SPECIFIED

-

-

NOT SPECIFIED

STP80N

-

-

-

-

300W Tc

-

-

-

N-Channel

-

8m Ω @ 40A, 10V

4V @ 250μA

3740pF @ 15V

80A Tc

112nC @ 10V

-

10V

±20V

-

-

-

-

-

-

-

-

-

-

ROHS3 Compliant

-

-

Automotive, AEC-Q101, STripFET™

-

-

-

-

-

ACTIVE (Last Updated: 7 months ago)

12 Weeks

55V

-

-

-

-

-

-

-

-

-

STP80NE03L-06 vs STP80NF55-08AG
STP80NF55

STMicroelectronics

-

Through Hole

TO-220-3

SILICON

-

Tube

e3

Active

1 (Unlimited)

3

EAR99

Matte Tin (Sn)

-

FET General Purpose Power

-

-

NOT SPECIFIED

not_compliant

-

NOT SPECIFIED

STP80N

3

R-PSFM-T3

Not Qualified

1

-

-

ENHANCEMENT MODE

-

-

SWITCHING

-

-

-

-

-

-

-

-

-

-

TO-220AB

-

0.0065Ohm

-

320A

1300 mJ

-

-

ROHS3 Compliant

-

-

-

-

-

-

80A

-

-

12 Weeks

-

NO

SINGLE

175°C

SINGLE WITH BUILT-IN DIODE

DRAIN

N-CHANNEL

55V

METAL-OXIDE SEMICONDUCTOR

210W

STP80NE03L-06 vs STP80NF55