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STP80N20M5

STMicroelectronics STP80N20M5

Part Number:
STP80N20M5
Manufacturer:
STMicroelectronics
Ventron No:
2488138-STP80N20M5
Description:
MOSFET N-CH 200V 61A TO-220
ECAD Model:
Datasheet:
STP80N20M5

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Specifications
STMicroelectronics STP80N20M5 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STP80N20M5.
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-220-3
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    150°C TJ
  • Packaging
    Tube
  • Series
    MDmesh™ V
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Resistance
    23MOhm
  • Terminal Finish
    Tin (Sn)
  • Subcategory
    FET General Purpose Power
  • Technology
    MOSFET (Metal Oxide)
  • Base Part Number
    STP80N
  • Pin Count
    3
  • Number of Elements
    1
  • Voltage
    200V
  • Power Dissipation-Max
    190W Tc
  • Element Configuration
    Single
  • Current
    61A
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    190W
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    23m Ω @ 30.5A, 10V
  • Vgs(th) (Max) @ Id
    5V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    4329pF @ 50V
  • Current - Continuous Drain (Id) @ 25°C
    61A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    104nC @ 10V
  • Rise Time
    31ns
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±25V
  • Fall Time (Typ)
    176 ns
  • Turn-Off Delay Time
    131 ns
  • Continuous Drain Current (ID)
    61A
  • Threshold Voltage
    4V
  • JEDEC-95 Code
    TO-220AB
  • Gate to Source Voltage (Vgs)
    25V
  • Drain to Source Breakdown Voltage
    200V
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
STP80N20M5 Description
STP80N20M5 is N-channel Power MOSFETs based on the MDmesh? M5 innovative vertical process technology combined with the well-known PowerMESH? horizontal layout. The resulting products offer extremely low on-resistance, making them particularly suitable for applications requiring high power and superior efficiency.

STP80N20M5 Features
Extremely low RDS(on)
100% avalanche tested
Excellent switching performance
Low gate charge and input capacitance

STP80N20M5 Applications
Industrial
Automotive
Enterprise systems
STP80N20M5 More Descriptions
N-channel 200 V, 0.019 Ohm typ., 61 A MDmesh(TM) V Power MOSFET in TO-220 Package
Trans MOSFET N-CH 200V 61A 3-Pin(3 Tab) TO-220 Tube
Power Field-Effect Transistor, 65A I(D), 200V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N CH, 200V, 61A, TO-220; Transistor Polarity: N Channel; Continuous Drain Current Id: 61A; Drain Source Voltage Vds: 200V; On Resistance Rds(on): 0.019ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 190W; Transistor Case Style: TO-220; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (17-Dec-2015)
Product Comparison
The three parts on the right have similar specifications to STP80N20M5.
  • Image
    Part Number
    Manufacturer
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Resistance
    Terminal Finish
    Subcategory
    Technology
    Base Part Number
    Pin Count
    Number of Elements
    Voltage
    Power Dissipation-Max
    Element Configuration
    Current
    Operating Mode
    Power Dissipation
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    JEDEC-95 Code
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Lifecycle Status
    Factory Lead Time
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Drain to Source Voltage (Vdss)
    Surface Mount
    Terminal Position
    Reach Compliance Code
    JESD-30 Code
    Qualification Status
    Operating Temperature (Max)
    Configuration
    Case Connection
    Polarity/Channel Type
    Drain Current-Max (Abs) (ID)
    Drain-source On Resistance-Max
    Pulsed Drain Current-Max (IDM)
    DS Breakdown Voltage-Min
    Avalanche Energy Rating (Eas)
    FET Technology
    Power Dissipation-Max (Abs)
    Weight
    Additional Feature
    Number of Channels
    Turn On Delay Time
    Height
    Length
    Width
    View Compare
  • STP80N20M5
    STP80N20M5
    STMicroelectronics
    Through Hole
    Through Hole
    TO-220-3
    3
    SILICON
    150°C TJ
    Tube
    MDmesh™ V
    e3
    yes
    Obsolete
    1 (Unlimited)
    3
    EAR99
    23MOhm
    Tin (Sn)
    FET General Purpose Power
    MOSFET (Metal Oxide)
    STP80N
    3
    1
    200V
    190W Tc
    Single
    61A
    ENHANCEMENT MODE
    190W
    N-Channel
    SWITCHING
    23m Ω @ 30.5A, 10V
    5V @ 250μA
    4329pF @ 50V
    61A Tc
    104nC @ 10V
    31ns
    10V
    ±25V
    176 ns
    131 ns
    61A
    4V
    TO-220AB
    25V
    200V
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • STP80NF55-08AG
    STP80NF55-08AG
    STMicroelectronics
    -
    Through Hole
    TO-220-3
    -
    -
    -55°C~175°C TJ
    Tube
    Automotive, AEC-Q101, STripFET™
    -
    -
    Active
    1 (Unlimited)
    -
    -
    -
    -
    -
    MOSFET (Metal Oxide)
    STP80N
    -
    -
    -
    300W Tc
    -
    -
    -
    -
    N-Channel
    -
    8m Ω @ 40A, 10V
    4V @ 250μA
    3740pF @ 15V
    80A Tc
    112nC @ 10V
    -
    10V
    ±20V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
    ACTIVE (Last Updated: 7 months ago)
    12 Weeks
    NOT SPECIFIED
    NOT SPECIFIED
    55V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    STP80N20M5 vs STP80NF55-08AG
  • STP80NF55
    STP80NF55
    STMicroelectronics
    -
    Through Hole
    TO-220-3
    -
    SILICON
    -
    Tube
    -
    e3
    -
    Active
    1 (Unlimited)
    3
    EAR99
    -
    Matte Tin (Sn)
    FET General Purpose Power
    -
    STP80N
    3
    1
    -
    -
    -
    -
    ENHANCEMENT MODE
    -
    -
    SWITCHING
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    TO-220AB
    -
    -
    -
    -
    ROHS3 Compliant
    -
    -
    12 Weeks
    NOT SPECIFIED
    NOT SPECIFIED
    -
    NO
    SINGLE
    not_compliant
    R-PSFM-T3
    Not Qualified
    175°C
    SINGLE WITH BUILT-IN DIODE
    DRAIN
    N-CHANNEL
    80A
    0.0065Ohm
    320A
    55V
    1300 mJ
    METAL-OXIDE SEMICONDUCTOR
    210W
    -
    -
    -
    -
    -
    -
    -
    STP80N20M5 vs STP80NF55
  • STP80N10F7
    STP80N10F7
    STMicroelectronics
    Through Hole
    Through Hole
    TO-220-3
    3
    SILICON
    -55°C~175°C TJ
    Tube
    DeepGATE™, STripFET™ VII
    -
    -
    Active
    1 (Unlimited)
    3
    EAR99
    -
    -
    -
    MOSFET (Metal Oxide)
    STP80N
    -
    2
    -
    110W Tc
    Single
    -
    ENHANCEMENT MODE
    110W
    N-Channel
    SWITCHING
    10m Ω @ 40A, 10V
    4.5V @ 250μA
    3100pF @ 50V
    80A Tc
    45nC @ 10V
    32ns
    10V
    ±20V
    13 ns
    36 ns
    80A
    -
    -
    20V
    100V
    -
    -
    ROHS3 Compliant
    Lead Free
    ACTIVE (Last Updated: 8 months ago)
    13 Weeks
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    DRAIN
    -
    -
    -
    -
    -
    -
    -
    -
    329.988449mg
    ULTRA LOW-ON RESISTANCE
    1
    19 ns
    4.6mm
    10.4mm
    15.75mm
    STP80N20M5 vs STP80N10F7
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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