STMicroelectronics STP24NM60N

Name: STP24NM60N
Brand: STMicroelectronics
SKU: 2479452-STP24NM60N
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: STP24NM60N

Manufacturer:: STMicroelectronics

Ventron No:: 2479452-STP24NM60N

Description:: MOSFET N-CH 600V 17A TO220

ECAD Model:

Datasheet:: STP24NM60N

Specifications

STMicroelectronics STP24NM60N technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STP24NM60N.

Lifecycle Status
ACTIVE (Last Updated: 7 months ago)
Factory Lead Time
16 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Series
MDmesh™ II
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Resistance
190MOhm
Terminal Finish
Tin (Sn)
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Base Part Number
STP24N
Pin Count
3
Number of Elements
1
Power Dissipation-Max
125W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
120W
Case Connection
DRAIN
Turn On Delay Time
11.5 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
190m Ω @ 8A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
1400pF @ 50V
Current - Continuous Drain (Id) @ 25°C
17A Tc
Gate Charge (Qg) (Max) @ Vgs
46nC @ 10V
Rise Time
16.5ns
Drain to Source Voltage (Vdss)
600V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±30V
Fall Time (Typ)
37 ns
Turn-Off Delay Time
73 ns
Continuous Drain Current (ID)
17A
Threshold Voltage
3V
JEDEC-95 Code
TO-220AB
Gate to Source Voltage (Vgs)
30V
Drain to Source Breakdown Voltage
650V
Pulsed Drain Current-Max (IDM)
68A
Height
15.75mm
Length
10.4mm
Width
4.6mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

STP24NM60N Description These devices are N-channel Power MOSFETs developed using the second generation of MDmesh? technology. This revolutionary Power MOSFET associates a vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charges. It is, therefore, suitable for the most demanding high-efficiency converters.

STP24NM60N Features 100% avalanche tested Low input capacitance and gate charge Low gate input resistance

STP24NM60N Applications Switching applications

STP24NM60N More Descriptions

N-channel 600 V, 0.168 Ohm, 17 A MDmesh(TM) II Power MOSFET TO-220
Trans MOSFET N-CH 600V 17A 3-Pin(3 Tab) TO-220AB Tube / MOSFET N-CH 600V 17A TO220
N-Channel 600 V 190 mOhm Flange Mount MDmesh II Power Mosfet - TO-220
MOSFET, N CH, 600V, 17A, TO 220; Transistor Polarity: N Channel; Continuous Drain Current Id: 17A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.168ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Powe
Power Field-Effect Transistor, 17A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Product Comparison

The three parts on the right have similar specifications to STP24NM60N.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Series

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Resistance

Terminal Finish

Subcategory

Technology

Base Part Number

Pin Count

Number of Elements

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Case Connection

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

JEDEC-95 Code

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Pulsed Drain Current-Max (IDM)

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Pbfree Code

Voltage - Rated DC

Current Rating

JESD-30 Code

View Compare
STP24NM60N

STMicroelectronics

ACTIVE (Last Updated: 7 months ago)

16 Weeks

Through Hole

Through Hole

TO-220-3

3

SILICON

-55°C~150°C TJ

Tube

MDmesh™ II

e3

Active

1 (Unlimited)

3

EAR99

190MOhm

Tin (Sn)

FET General Purpose Power

MOSFET (Metal Oxide)

STP24N

3

1

125W Tc

Single

ENHANCEMENT MODE

120W

DRAIN

11.5 ns

N-Channel

SWITCHING

190m Ω @ 8A, 10V

4V @ 250μA

1400pF @ 50V

17A Tc

46nC @ 10V

16.5ns

600V

10V

±30V

37 ns

73 ns

17A

3V

TO-220AB

30V

650V

68A

15.75mm

10.4mm

4.6mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-
STP20N20

STMicroelectronics

-

-

Through Hole

Through Hole

TO-220-3

-

SILICON

-50°C~150°C TJ

Tube

STripFET™ II

e3

Obsolete

1 (Unlimited)

3

EAR99

-

Matte Tin (Sn)

FET General Purpose Power

MOSFET (Metal Oxide)

STP20N

3

1

90W Tc

Single

ENHANCEMENT MODE

90W

-

15 ns

N-Channel

SWITCHING

125m Ω @ 10A, 10V

4V @ 250μA

940pF @ 25V

18A Tc

39nC @ 10V

30ns

-

10V

±20V

10 ns

40 ns

18A

-

TO-220AB

20V

200V

72A

-

-

-

-

No

ROHS3 Compliant

Lead Free

yes

200V

18A

R-PSFM-T3

STP24NM60N vs STP20N20
STP240N10F7

STMicroelectronics

ACTIVE (Last Updated: 7 months ago)

13 Weeks

Through Hole

Through Hole

TO-220-3

3

-

-55°C~175°C TJ

Tube

DeepGATE™, STripFET™ VII

-

Active

1 (Unlimited)

-

EAR99

-

-

-

MOSFET (Metal Oxide)

STP240

-

-

300W Tc

Single

-

300W

-

62 ns

N-Channel

-

3.2m Ω @ 60A, 10V

4.5V @ 250μA

12600pF @ 25V

180A Tc

176nC @ 10V

108ns

-

10V

±20V

40 ns

148 ns

180A

-

-

20V

100V

-

15.75mm

10.4mm

4.6mm

-

No

ROHS3 Compliant

Lead Free

-

-

-

-

STP24NM60N vs STP240N10F7
STP21NM60ND

STMicroelectronics

-

-

Through Hole

Through Hole

TO-220-3

3

SILICON

150°C TJ

Tube

FDmesh™ II

e3

Obsolete

1 (Unlimited)

3

EAR99

220mOhm

Matte Tin (Sn) - annealed

FET General Purpose Power

MOSFET (Metal Oxide)

STP21N

3

1

140W Tc

Single

ENHANCEMENT MODE

140W

-

18 ns

N-Channel

SWITCHING

220m Ω @ 8.5A, 10V

5V @ 250μA

1800pF @ 50V

17A Tc

60nC @ 10V

16ns

-

10V

±25V

48 ns

70 ns

17A

4V

TO-220AB

25V

600V

68A

15.75mm

10.4mm

4.6mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

STP24NM60N vs STP21NM60ND