STMicroelectronics STP24N60DM2

Name: STP24N60DM2
Brand: STMicroelectronics
SKU: 2479469-STP24N60DM2
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: STP24N60DM2

Manufacturer:: STMicroelectronics

Ventron No:: 2479469-STP24N60DM2

Description:: MOSFET N-CH 600V 18A TO-220

ECAD Model:

Datasheet:: STP24N60DM2

Specifications

STMicroelectronics STP24N60DM2 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STP24N60DM2.

Lifecycle Status
ACTIVE (Last Updated: 8 months ago)
Factory Lead Time
17 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Number of Pins
3
Weight
329.988449mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Series
FDmesh™ II Plus
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Technology
MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Base Part Number
STP24N
Number of Elements
1
Number of Channels
1
Power Dissipation-Max
150W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
150W
Case Connection
DRAIN
Turn On Delay Time
15 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
200m Ω @ 9A, 10V
Vgs(th) (Max) @ Id
5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
1055pF @ 100V
Current - Continuous Drain (Id) @ 25°C
18A Tc
Gate Charge (Qg) (Max) @ Vgs
29nC @ 10V
Rise Time
8.7ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±25V
Fall Time (Typ)
15 ns
Turn-Off Delay Time
60 ns
Continuous Drain Current (ID)
18A
JEDEC-95 Code
TO-220AB
Gate to Source Voltage (Vgs)
25V
Drain-source On Resistance-Max
0.2Ohm
Drain to Source Breakdown Voltage
600V
Pulsed Drain Current-Max (IDM)
72A
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

STP24N60DM2 Description
The INA826AIDRGR is a low-cost instrumentation amplifier that operates across a large single-supply or dual-supply range and consumes very little power. Any gain between 1 and 1000 can be set with a single external resistor. Because of the low gain drift of just 35 ppm/°C, the device has exceptional temperature stability, even at G > 1. (maximum).

STP24N60DM2 Features
? Gain drift: 1 part per million per degree Celsius (G = 1), 35 parts per million per degree Celsius (G > 1)
? Noise level: 18 nV/Hz, G=100
? 1 MHz (G = 1), 60 kHz (G = 100) bandwidths
? Protected up to 40 V inputs
? Output from train to rail
? Current supply: 200 A

STP24N60DM2 Applications
? Module for analog input
? Transmitter of flow
? Battery evaluation
? Perform an LCD test
? An electrocardiogram (ECG) (ECG)
? Surgical instruments
? Analytical processes (pH, gas, concentration, force, and humidity)
? Breaker for the circuit (ACB, MCCB, VCB)

STP24N60DM2 More Descriptions

N-channel 600 V, 0.175 Ohm typ., 18 A MDmesh DM2 Power MOSFET in TO-220 package
Single N-Channel 600 V 0.2 Ohm 29 nC 150 W Silicon Flange Mount Mosfet TO-220-3
Power MOSFET, N Channel, 600 V, 18 A, 200 Milliohms, TO-220, 3 Pins, Through Hole
Trans MOSFET N-CH 600V 18A 3-Pin(3 Tab) TO-220AB Tube
Mosfet, N-Ch, 600V, 18A, To-220Ab; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:18A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4V Rohs Compliant: Yes |Stmicroelectronics STP24N60DM2
Power Field-Effect Transistor, 18A I(D), 600V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Product Comparison

The three parts on the right have similar specifications to STP24N60DM2.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Weight

Transistor Element Material

Operating Temperature

Packaging

Series

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Technology

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Base Part Number

Number of Elements

Number of Channels

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Case Connection

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

JEDEC-95 Code

Gate to Source Voltage (Vgs)

Drain-source On Resistance-Max

Drain to Source Breakdown Voltage

Pulsed Drain Current-Max (IDM)

RoHS Status

Lead Free

JESD-609 Code

Pbfree Code

Terminal Finish

Subcategory

Voltage - Rated DC

Current Rating

Pin Count

JESD-30 Code

Radiation Hardening

Drain to Source Voltage (Vdss)

Drain Current-Max (Abs) (ID)

DS Breakdown Voltage-Min

Height

Length

Width

View Compare
STP24N60DM2

STMicroelectronics

ACTIVE (Last Updated: 8 months ago)

17 Weeks

Through Hole

Through Hole

TO-220-3

3

329.988449mg

SILICON

-55°C~150°C TJ

Tube

FDmesh™ II Plus

Active

1 (Unlimited)

3

EAR99

MOSFET (Metal Oxide)

NOT SPECIFIED

NOT SPECIFIED

STP24N

1

1

150W Tc

Single

ENHANCEMENT MODE

150W

DRAIN

15 ns

N-Channel

SWITCHING

200m Ω @ 9A, 10V

5V @ 250μA

1055pF @ 100V

18A Tc

29nC @ 10V

8.7ns

10V

±25V

15 ns

60 ns

18A

TO-220AB

25V

0.2Ohm

600V

72A

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
STP20N20

STMicroelectronics

-

-

Through Hole

Through Hole

TO-220-3

-

-

SILICON

-50°C~150°C TJ

Tube

STripFET™ II

Obsolete

1 (Unlimited)

3

EAR99

MOSFET (Metal Oxide)

-

-

STP20N

1

-

90W Tc

Single

ENHANCEMENT MODE

90W

-

15 ns

N-Channel

SWITCHING

125m Ω @ 10A, 10V

4V @ 250μA

940pF @ 25V

18A Tc

39nC @ 10V

30ns

10V

±20V

10 ns

40 ns

18A

TO-220AB

20V

-

200V

72A

ROHS3 Compliant

Lead Free

e3

yes

Matte Tin (Sn)

FET General Purpose Power

200V

18A

3

R-PSFM-T3

No

-

-

-

-

-

-

STP24N60DM2 vs STP20N20
STP28N60M2

STMicroelectronics

ACTIVE (Last Updated: 8 months ago)

16 Weeks

Through Hole

Through Hole

TO-220-3

3

329.988449mg

SILICON

-55°C~150°C TJ

Tube

MDmesh™ II Plus

Active

1 (Unlimited)

3

EAR99

MOSFET (Metal Oxide)

-

-

STP28N

1

1

170W Tc

Single

ENHANCEMENT MODE

-

DRAIN

14.5 ns

N-Channel

SWITCHING

150m Ω @ 12A, 10V

4V @ 250μA

1370pF @ 100V

24A Tc

37nC @ 10V

-

10V

±25V

-

100 ns

24A

TO-220AB

25V

-

-

88A

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

No

600V

22A

600V

15.75mm

10.4mm

4.6mm

STP24N60DM2 vs STP28N60M2
STP240N10F7

STMicroelectronics

ACTIVE (Last Updated: 7 months ago)

13 Weeks

Through Hole

Through Hole

TO-220-3

3

-

-

-55°C~175°C TJ

Tube

DeepGATE™, STripFET™ VII

Active

1 (Unlimited)

-

EAR99

MOSFET (Metal Oxide)

-

-

STP240

-

-

300W Tc

Single

-

300W

-

62 ns

N-Channel

-

3.2m Ω @ 60A, 10V

4.5V @ 250μA

12600pF @ 25V

180A Tc

176nC @ 10V

108ns

10V

±20V

40 ns

148 ns

180A

-

20V

-

100V

-

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

No

-

-

-

15.75mm

10.4mm

4.6mm

STP24N60DM2 vs STP240N10F7