STMicroelectronics STP20NM65N
- Part Number:
- STP20NM65N
- Manufacturer:
- STMicroelectronics
- Ventron No:
- 2488152-STP20NM65N
- Description:
- MOSFET N-CH 650V 15A TO-220
- Datasheet:
- STP,F20NM65N
STMicroelectronics STP20NM65N technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STP20NM65N.
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-220-3
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingTube
- SeriesMDmesh™ II
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- Resistance270mOhm
- Terminal FinishMatte Tin (Sn)
- Additional FeatureAVALANCHE RATED
- SubcategoryFET General Purpose Power
- TechnologyMOSFET (Metal Oxide)
- Base Part NumberSTP20N
- Pin Count3
- Number of Elements1
- Power Dissipation-Max125W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation160W
- Turn On Delay Time15 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs270m Ω @ 7.5A, 10V
- Vgs(th) (Max) @ Id4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds1280pF @ 50V
- Current - Continuous Drain (Id) @ 25°C15A Tc
- Gate Charge (Qg) (Max) @ Vgs44nC @ 10V
- Rise Time10ns
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±25V
- Fall Time (Typ)20 ns
- Turn-Off Delay Time75 ns
- Continuous Drain Current (ID)15A
- JEDEC-95 CodeTO-220AB
- Gate to Source Voltage (Vgs)25V
- Drain to Source Breakdown Voltage650V
- Pulsed Drain Current-Max (IDM)60A
- Height15.75mm
- Length10.4mm
- Width4.6mm
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
STP20NM65N Overview
A device's maximum input capacitance is 1280pF @ 50V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 15A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=650V, and this device has a drain-to-source breakdown voltage of 650V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 75 ns.Its maximum pulsed drain current is 60A, which is also its maximum rating peak drainage current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 15 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 25V.This device uses no drive voltage (10V) to reduce its overall power consumption.
STP20NM65N Features
a continuous drain current (ID) of 15A
a drain-to-source breakdown voltage of 650V voltage
the turn-off delay time is 75 ns
based on its rated peak drain current 60A.
STP20NM65N Applications
There are a lot of STMicroelectronics
STP20NM65N applications of single MOSFETs transistors.
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters
A device's maximum input capacitance is 1280pF @ 50V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 15A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=650V, and this device has a drain-to-source breakdown voltage of 650V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 75 ns.Its maximum pulsed drain current is 60A, which is also its maximum rating peak drainage current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 15 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 25V.This device uses no drive voltage (10V) to reduce its overall power consumption.
STP20NM65N Features
a continuous drain current (ID) of 15A
a drain-to-source breakdown voltage of 650V voltage
the turn-off delay time is 75 ns
based on its rated peak drain current 60A.
STP20NM65N Applications
There are a lot of STMicroelectronics
STP20NM65N applications of single MOSFETs transistors.
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters
STP20NM65N More Descriptions
N-channel 650V, 0.250 Ohm, 15 A, TO-220 second generation MDmesh(TM) Power MOSFET
Trans MOSFET N-CH 650V 15A 3-Pin(3 Tab) TO-220AB Tube
Power Field-Effect Transistor, 15A I(D), 650V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MAXIM INTEGRATED PRODUCTS DS2781E FUEL GAUGE STANDALONE 1 WIRE, SMD
MOSFET N-Channel 650V Pwr Mosfet
Trans MOSFET N-CH 650V 15A 3-Pin(3 Tab) TO-220AB Tube
Power Field-Effect Transistor, 15A I(D), 650V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MAXIM INTEGRATED PRODUCTS DS2781E FUEL GAUGE STANDALONE 1 WIRE, SMD
MOSFET N-Channel 650V Pwr Mosfet
The three parts on the right have similar specifications to STP20NM65N.
-
ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingSeriesJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsResistanceTerminal FinishAdditional FeatureSubcategoryTechnologyBase Part NumberPin CountNumber of ElementsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)JEDEC-95 CodeGate to Source Voltage (Vgs)Drain to Source Breakdown VoltagePulsed Drain Current-Max (IDM)HeightLengthWidthRadiation HardeningRoHS StatusLead FreeContact PlatingECCN CodeThreshold VoltageAvalanche Energy Rating (Eas)REACH SVHCLifecycle StatusFactory Lead TimeWeightNumber of ChannelsCase ConnectionDrain to Source Voltage (Vdss)Drain Current-Max (Abs) (ID)DS Breakdown Voltage-MinView Compare
-
STP20NM65NThrough HoleThrough HoleTO-220-33SILICON150°C TJTubeMDmesh™ IIe3yesObsolete1 (Unlimited)3270mOhmMatte Tin (Sn)AVALANCHE RATEDFET General Purpose PowerMOSFET (Metal Oxide)STP20N31125W TcSingleENHANCEMENT MODE160W15 nsN-ChannelSWITCHING270m Ω @ 7.5A, 10V4V @ 250μA1280pF @ 50V15A Tc44nC @ 10V10ns10V±25V20 ns75 ns15ATO-220AB25V650V60A15.75mm10.4mm4.6mmNoROHS3 CompliantLead Free--------------
-
Through HoleThrough HoleTO-220-33SILICON150°C TJTubeFDmesh™ IIe3-Obsolete1 (Unlimited)3180mOhm--FET General Purpose PowerMOSFET (Metal Oxide)STP23N31150W TcSingleENHANCEMENT MODE150W21 nsN-ChannelSWITCHING180m Ω @ 10A, 10V5V @ 250μA2100pF @ 50V19.5A Tc69nC @ 10V45ns10V±25V40 ns90 ns19.5ATO-220AB25V600V78A15.75mm10.4mm4.6mmNoROHS3 CompliantLead FreeTinEAR994V700 mJNo SVHC--------
-
Through HoleThrough HoleTO-220-33SILICON-55°C~150°C TJTubeMDmesh™ II Plus--Active1 (Unlimited)3----MOSFET (Metal Oxide)STP28N-1170W TcSingleENHANCEMENT MODE-14.5 nsN-ChannelSWITCHING150m Ω @ 12A, 10V4V @ 250μA1370pF @ 100V24A Tc37nC @ 10V-10V±25V-100 ns24ATO-220AB25V-88A15.75mm10.4mm4.6mmNoROHS3 CompliantLead Free-EAR99---ACTIVE (Last Updated: 8 months ago)16 Weeks329.988449mg1DRAIN600V22A600V
-
Through HoleThrough HoleTO-220-33--55°C~175°C TJTubeDeepGATE™, STripFET™ VII--Active1 (Unlimited)-----MOSFET (Metal Oxide)STP240--300W TcSingle-300W62 nsN-Channel-3.2m Ω @ 60A, 10V4.5V @ 250μA12600pF @ 25V180A Tc176nC @ 10V108ns10V±20V40 ns148 ns180A-20V100V-15.75mm10.4mm4.6mmNoROHS3 CompliantLead Free-EAR99---ACTIVE (Last Updated: 7 months ago)13 Weeks------
Popular Search Part Number
Related Keywords
Search Tags
Latest News
-
07 April 2024
BTS5030-1EJA Alternatives, Specification, Pinout, Features and Application
Ⅰ. BTS5030-1EJA overviewⅡ. BTS5030-1EJA specificationⅢ. Protection function of BTS5030-1EJAⅣ. Features of BTS5030-1EJAⅤ. How does BTS5030-1EJA realize real-time monitoring of the working status of the circuit?Ⅵ. BTS5030-1EJA pinout and... -
08 April 2024
CC2530F128RHAT Architecture, Replacements, Advantages, Applications and Other Details
Ⅰ. Overview of CC2530F128RHATⅡ. Concrete applications of CC2530F128RHATⅢ. Advantages of CC2530F128RHATⅣ. How to choose the energy-saving working mode for CC2530F128RHAT?Ⅴ. Technical parameters of CC2530F128RHATⅥ. Block diagram and architecture... -
08 April 2024
STM32F103RET6: Everything You Need to Know For Your Project
Ⅰ. Overview of STM32F103RET6Ⅱ. Importance of STM32F103RET6 in the field of technologyⅢ. Specifications of STM32F103RET6Ⅳ. The practical application of STM32F103RET6Ⅴ. Electrical characteristics of STM32F103RET6Ⅵ. How to use STM32F103RET6?Ⅶ.... -
09 April 2024
TPS82085SILR Characteristics, Specifications, Application Cases and More
Ⅰ. What is TPS82085SILR?Ⅱ. Characteristics of TPS82085SILRⅢ. Device functional modesⅣ. Specifications of TPS82085SILRⅤ. Thermal consideration of TPS82085SILRⅥ. What advanced technologies does TPS82085SILR use?Ⅶ. Competitive product analysis of TPS82085SILRⅧ....
Help you to save your cost and time.
Reliable package for your goods.
Fast Reliable Delivery to save time.
Quality premium after-sale service.