STMicroelectronics STP20NM60

Name: STP20NM60
Brand: STMicroelectronics
SKU: 2477865-STP20NM60
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: STP20NM60

Manufacturer:: STMicroelectronics

Ventron No:: 2477865-STP20NM60

Description:: MOSFET N-CH 600V 20A TO-220

ECAD Model:

Datasheet:: STP20NM60

Specifications

STMicroelectronics STP20NM60 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STP20NM60.

Lifecycle Status
ACTIVE (Last Updated: 8 months ago)
Factory Lead Time
16 Weeks
Contact Plating
Tin
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tube
Series
MDmesh™
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Resistance
290mOhm
Subcategory
FET General Purpose Power
Voltage - Rated DC
650V
Technology
MOSFET (Metal Oxide)
Current Rating
20A
Base Part Number
STP20N
Pin Count
3
Number of Elements
1
Power Dissipation-Max
192W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
192W
Turn On Delay Time
25 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
290m Ω @ 10A, 10V
Vgs(th) (Max) @ Id
5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
1500pF @ 25V
Current - Continuous Drain (Id) @ 25°C
20A Tc
Gate Charge (Qg) (Max) @ Vgs
54nC @ 10V
Rise Time
20ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±30V
Fall Time (Typ)
11 ns
Turn-Off Delay Time
42 ns
Continuous Drain Current (ID)
20A
Threshold Voltage
4V
JEDEC-95 Code
TO-220AB
Gate to Source Voltage (Vgs)
30V
Drain to Source Breakdown Voltage
600V
Pulsed Drain Current-Max (IDM)
80A
Avalanche Energy Rating (Eas)
650 mJ
Nominal Vgs
4 V
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

STP20NM60 Description
The STP20NM60 MDmeshTM is a new innovative Power MOSFET technology that combines the company's PowerMESHTM horizontal architecture with the multiple drain process. The end result has an exceptional low on-resistance, an exceptionally high dv/dt, and good avalanche properties. The use of the company's proprietary strip process results in total dynamic performance that is far superior to that of similar competitors' products.
STP20NM60 Features
Avalanche and high dv/dt capabilities Avalanche safety is guaranteed. Low gate charge and input capacitance Low input gate resistance
STP20NM60 Applications
Switching applications.

STP20NM60 More Descriptions

N-Channel 600V - 0.25Ohm - 20A - TO-220 MDmesh™ POWER MOSFET
N-Channel 600 V 0.29 Ohm Flange Mount MDMesh Power MosFet - TO-220
Trans MOSFET N-CH 600V 20A 3-Pin(3 Tab) TO-220AB Tube
MOSFET, N-CH, 600V, 20A, TO-220; Transistor Polarity: N Channel; Continuous Drain Current Id: 20A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.29ohm; Rds(on) Test Voltage Vgs: 30V; Threshold Voltage Vgs: 4V; Power
Power Field-Effect Transistor, 20A I(D), 600V, 0.29ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Product Comparison

The three parts on the right have similar specifications to STP20NM60.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Contact Plating

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Series

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Resistance

Subcategory

Voltage - Rated DC

Technology

Current Rating

Base Part Number

Pin Count

Number of Elements

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

JEDEC-95 Code

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Pulsed Drain Current-Max (IDM)

Avalanche Energy Rating (Eas)

Nominal Vgs

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Terminal Finish

JESD-30 Code

Height

Length

Width

Termination

Drain Current-Max (Abs) (ID)

Dual Supply Voltage

View Compare
STP20NM60

STMicroelectronics

ACTIVE (Last Updated: 8 months ago)

16 Weeks

Tin

Through Hole

Through Hole

TO-220-3

3

SILICON

150°C TJ

Tube

MDmesh™

e3

Active

1 (Unlimited)

3

EAR99

290mOhm

FET General Purpose Power

650V

MOSFET (Metal Oxide)

20A

STP20N

3

1

192W Tc

Single

ENHANCEMENT MODE

192W

25 ns

N-Channel

SWITCHING

290m Ω @ 10A, 10V

5V @ 250μA

1500pF @ 25V

20A Tc

54nC @ 10V

20ns

10V

±30V

11 ns

42 ns

20A

4V

TO-220AB

30V

600V

80A

650 mJ

4 V

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-
STP20NM50FD

STMicroelectronics

ACTIVE (Last Updated: 8 months ago)

16 Weeks

-

Through Hole

Through Hole

TO-220-3

-

SILICON

-65°C~150°C TJ

Tube

FDmesh™

e3

Active

1 (Unlimited)

3

EAR99

250mOhm

FET General Purpose Power

500V

MOSFET (Metal Oxide)

20A

STP20N

3

1

192W Tc

Single

ENHANCEMENT MODE

192W

22 ns

N-Channel

SWITCHING

250m Ω @ 10A, 10V

5V @ 250μA

1380pF @ 25V

20A Tc

53nC @ 10V

20ns

10V

±30V

15 ns

-

20A

-

TO-220AB

30V

500V

80A

700 mJ

-

-

No

Non-RoHS Compliant

Lead Free

Tin (Sn)

R-PSFM-T3

-

-

-

-

-

-

STP20NM60 vs STP20NM50FD
STP240N10F7

STMicroelectronics

ACTIVE (Last Updated: 7 months ago)

13 Weeks

-

Through Hole

Through Hole

TO-220-3

3

-

-55°C~175°C TJ

Tube

DeepGATE™, STripFET™ VII

-

Active

1 (Unlimited)

-

EAR99

-

-

-

MOSFET (Metal Oxide)

-

STP240

-

-

300W Tc

Single

-

300W

62 ns

N-Channel

-

3.2m Ω @ 60A, 10V

4.5V @ 250μA

12600pF @ 25V

180A Tc

176nC @ 10V

108ns

10V

±20V

40 ns

148 ns

180A

-

-

20V

100V

-

-

-

-

No

ROHS3 Compliant

Lead Free

-

-

15.75mm

10.4mm

4.6mm

-

-

-

STP20NM60 vs STP240N10F7
STP26NM60N

STMicroelectronics

ACTIVE (Last Updated: 8 months ago)

16 Weeks

-

Through Hole

Through Hole

TO-220-3

3

SILICON

150°C TJ

Tube

MDmesh™ II

e3

Active

1 (Unlimited)

3

EAR99

165MOhm

FET General Purpose Power

-

MOSFET (Metal Oxide)

-

STP26N

3

1

140W Tc

Single

ENHANCEMENT MODE

140W

13 ns

N-Channel

SWITCHING

165m Ω @ 10A, 10V

4V @ 250μA

1800pF @ 50V

20A Tc

60nC @ 10V

25ns

10V

±30V

50 ns

85 ns

10A

-

TO-220AB

25V

600V

80A

-

3 V

No SVHC

No

ROHS3 Compliant

Lead Free

Matte Tin (Sn)

-

15.75mm

10.4mm

4.6mm

Through Hole

20A

600V

STP20NM60 vs STP26NM60N