STMicroelectronics STP20NM50FP

Name: STP20NM50FP
Brand: STMicroelectronics
SKU: 2487977-STP20NM50FP
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: STP20NM50FP

Manufacturer:: STMicroelectronics

Ventron No:: 2487977-STP20NM50FP

Description:: MOSFET N-CH 550V 20A TO-220FP

ECAD Model:

Datasheet:: STP20NM50FP

Specifications

STMicroelectronics STP20NM50FP technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STP20NM50FP.

Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-65°C~150°C TJ
Packaging
Tube
Series
MDmesh™
JESD-609 Code
e3
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Resistance
250mOhm
Terminal Finish
Matte Tin (Sn) - annealed
Subcategory
FET General Purpose Power
Voltage - Rated DC
550V
Technology
MOSFET (Metal Oxide)
Current Rating
20A
Base Part Number
STP20N
Pin Count
3
Number of Elements
1
Power Dissipation-Max
45W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
45W
Case Connection
ISOLATED
Turn On Delay Time
24 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
250m Ω @ 10A, 10V
Vgs(th) (Max) @ Id
5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
1480pF @ 25V
Current - Continuous Drain (Id) @ 25°C
20A Tc
Gate Charge (Qg) (Max) @ Vgs
56nC @ 10V
Rise Time
16ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±30V
Fall Time (Typ)
8.5 ns
Turn-Off Delay Time
9 ns
Continuous Drain Current (ID)
20A
Threshold Voltage
4V
JEDEC-95 Code
TO-220AB
Gate to Source Voltage (Vgs)
30V
Drain to Source Breakdown Voltage
500V
Pulsed Drain Current-Max (IDM)
80A
Avalanche Energy Rating (Eas)
650 mJ
Height
16.4mm
Length
10.4mm
Width
4.6mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

STP20NM50FP Description
STP20NM50FP is a 500v N-channel MDmesh? Power MOSFET. The MDmesh? is a new revolutionary Power MOSFET technology that associates the Multiple Drain process with the Company?ˉs PowerMESH? horizontal layout. The resulting product STP20NM50FP has an outstanding low on-resistance, impressively high dv/dt, and excellent avalanche characteristics and dynamic performances.

STP20NM50FP Features
High dv/dt and avalanche capabilities
100% avalanche tested
Low input capacitance and gate charge
Low gate input resistance
Drain current (continuous) at TC = 25??C: 20A

STP20NM50FP Applications
Rotary Switch
DIP Switch
Limit Switch
Reed Switch
Rocker Switch
Toggle Switch

STP20NM50FP More Descriptions

N CH POWER MOSFET, FDmesh, 500V, 20A, TO-220FP; Transistor Polarity:N Channel; C
N-channel 500 V, 0.20 Ohm typ., 20 A MDmesh(TM) Power MOSFET
Trans MOSFET N-CH 500V 20A 3-Pin(3 Tab) TO-220FP Tube
Power Field-Effect Transistor, 20A I(D), 500V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N CH, 550V, 20A, TO 220FP; Transistor Polarity:N Channel; Continuous Drain Current Id:20A; Drain Source Voltage Vds:500V; On Resistance Rds(on):0.2ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:45W; Operating Temperature Min:-65°C; Operating Temperature Max:150°C; Transistor Case Style:TO-220FP; No. of Pins:3; SVHC:No SVHC (18-Jun-2012); Operating Temperature Range:-65°C to 150°C

Product Comparison

The three parts on the right have similar specifications to STP20NM50FP.

Image

Part Number

Manufacturer

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Series

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Resistance

Terminal Finish

Subcategory

Voltage - Rated DC

Technology

Current Rating

Base Part Number

Pin Count

Number of Elements

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Case Connection

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

JEDEC-95 Code

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Pulsed Drain Current-Max (IDM)

Avalanche Energy Rating (Eas)

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Lifecycle Status

Factory Lead Time

Weight

Number of Channels

Drain to Source Voltage (Vdss)

Drain Current-Max (Abs) (ID)

DS Breakdown Voltage-Min

Termination

Dual Supply Voltage

Nominal Vgs

View Compare
STP20NM50FP

STMicroelectronics

Through Hole

Through Hole

TO-220-3 Full Pack

3

SILICON

-65°C~150°C TJ

Tube

MDmesh™

e3

Obsolete

1 (Unlimited)

3

EAR99

250mOhm

Matte Tin (Sn) - annealed

FET General Purpose Power

550V

MOSFET (Metal Oxide)

20A

STP20N

3

1

45W Tc

Single

ENHANCEMENT MODE

45W

ISOLATED

24 ns

N-Channel

SWITCHING

250m Ω @ 10A, 10V

5V @ 250μA

1480pF @ 25V

20A Tc

56nC @ 10V

16ns

10V

±30V

8.5 ns

9 ns

20A

4V

TO-220AB

30V

500V

80A

650 mJ

16.4mm

10.4mm

4.6mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-
STP28N60M2

STMicroelectronics

Through Hole

Through Hole

TO-220-3

3

SILICON

-55°C~150°C TJ

Tube

MDmesh™ II Plus

-

Active

1 (Unlimited)

3

EAR99

-

-

-

-

MOSFET (Metal Oxide)

-

STP28N

-

1

170W Tc

Single

ENHANCEMENT MODE

-

DRAIN

14.5 ns

N-Channel

SWITCHING

150m Ω @ 12A, 10V

4V @ 250μA

1370pF @ 100V

24A Tc

37nC @ 10V

-

10V

±25V

-

100 ns

24A

-

TO-220AB

25V

-

88A

-

15.75mm

10.4mm

4.6mm

-

No

ROHS3 Compliant

Lead Free

ACTIVE (Last Updated: 8 months ago)

16 Weeks

329.988449mg

1

600V

22A

600V

-

-

-

STP20NM50FP vs STP28N60M2
STP21NM60ND

STMicroelectronics

Through Hole

Through Hole

TO-220-3

3

SILICON

150°C TJ

Tube

FDmesh™ II

e3

Obsolete

1 (Unlimited)

3

EAR99

220mOhm

Matte Tin (Sn) - annealed

FET General Purpose Power

-

MOSFET (Metal Oxide)

-

STP21N

3

1

140W Tc

Single

ENHANCEMENT MODE

140W

-

18 ns

N-Channel

SWITCHING

220m Ω @ 8.5A, 10V

5V @ 250μA

1800pF @ 50V

17A Tc

60nC @ 10V

16ns

10V

±25V

48 ns

70 ns

17A

4V

TO-220AB

25V

600V

68A

-

15.75mm

10.4mm

4.6mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

STP20NM50FP vs STP21NM60ND
STP26NM60N

STMicroelectronics

Through Hole

Through Hole

TO-220-3

3

SILICON

150°C TJ

Tube

MDmesh™ II

e3

Active

1 (Unlimited)

3

EAR99

165MOhm

Matte Tin (Sn)

FET General Purpose Power

-

MOSFET (Metal Oxide)

-

STP26N

3

1

140W Tc

Single

ENHANCEMENT MODE

140W

-

13 ns

N-Channel

SWITCHING

165m Ω @ 10A, 10V

4V @ 250μA

1800pF @ 50V

20A Tc

60nC @ 10V

25ns

10V

±30V

50 ns

85 ns

10A

-

TO-220AB

25V

600V

80A

-

15.75mm

10.4mm

4.6mm

No SVHC

No

ROHS3 Compliant

Lead Free

ACTIVE (Last Updated: 8 months ago)

16 Weeks

-

-

-

20A

-

Through Hole

600V

3 V

STP20NM50FP vs STP26NM60N