STMicroelectronics STP20NK50Z

Name: STP20NK50Z
Brand: STMicroelectronics
SKU: 2478465-STP20NK50Z
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: STP20NK50Z

Manufacturer:: STMicroelectronics

Ventron No:: 2478465-STP20NK50Z

Description:: MOSFET N-CH 500V 17A TO-220

ECAD Model:

Datasheet:: STF/P20NK50Z

Specifications

STMicroelectronics STP20NK50Z technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STP20NK50Z.

Lifecycle Status
ACTIVE (Last Updated: 8 months ago)
Factory Lead Time
12 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Number of Pins
3
Weight
4.535924g
Transistor Element Material
SILICON
Operating Temperature
-50°C~150°C TJ
Packaging
Tube
Series
SuperMESH™
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Resistance
270mOhm
Terminal Finish
Matte Tin (Sn)
Subcategory
FET General Purpose Power
Voltage - Rated DC
500V
Technology
MOSFET (Metal Oxide)
Current Rating
17A
Base Part Number
STP20N
Pin Count
3
Number of Elements
1
Power Dissipation-Max
190W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
190W
Turn On Delay Time
28 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
270m Ω @ 8.5A, 10V
Vgs(th) (Max) @ Id
4.5V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds
2600pF @ 25V
Current - Continuous Drain (Id) @ 25°C
17A Tc
Gate Charge (Qg) (Max) @ Vgs
119nC @ 10V
Rise Time
20ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±30V
Fall Time (Typ)
15 ns
Turn-Off Delay Time
70 ns
Continuous Drain Current (ID)
17A
Threshold Voltage
3.75V
JEDEC-95 Code
TO-220AB
Gate to Source Voltage (Vgs)
30V
Drain to Source Breakdown Voltage
500V
Pulsed Drain Current-Max (IDM)
68A
Avalanche Energy Rating (Eas)
850 mJ
Height
15.75mm
Length
10.4mm
Width
4.6mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

STP20NK50Z Overview
When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 850 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 2600pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 17A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=500V. And this device has 500V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 70 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 68A.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 28 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 30V.Threshold voltage is the point at which an electrical device is set to activate any one of its operations, and this transistor has 3.75V threshold voltage. By using drive voltage (10V), this device helps reduce its overall power consumption.

STP20NK50Z Features
the avalanche energy rating (Eas) is 850 mJ
a continuous drain current (ID) of 17A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 70 ns
based on its rated peak drain current 68A.
a threshold voltage of 3.75V

STP20NK50Z Applications
There are a lot of STMicroelectronics
STP20NK50Z applications of single MOSFETs transistors.

LCD/LED TV
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools

STP20NK50Z More Descriptions

N-channel 500 V, 0.23 Ohm, 17 A SuperMESH(TM) Power MOSFET Zener-protected in TO-220 package
N-channel MOSFET Transistor, 17 A, 500 V, 3-Pin TO-220
N-Channel 500 V 0.27 Ohm Flange Mount SuperMESH Power MosFet - TO-220
Trans MOSFET N-CH 500V 17A 3-Pin(3 Tab) TO-220AB Tube
N Channel Mosfet, 500V, 17A, To-220; Channel Type:N Channel; Drain Source Voltage Vds:500V; Continuous Drain Current Id:17A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:3.75V; Msl:- Rohs Compliant: Yes |Stmicroelectronics STP20NK50Z
Power Field-Effect Transistor, 17A I(D), 500V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Product Comparison

The three parts on the right have similar specifications to STP20NK50Z.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Weight

Transistor Element Material

Operating Temperature

Packaging

Series

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Resistance

Terminal Finish

Subcategory

Voltage - Rated DC

Technology

Current Rating

Base Part Number

Pin Count

Number of Elements

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

JEDEC-95 Code

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Pulsed Drain Current-Max (IDM)

Avalanche Energy Rating (Eas)

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

JESD-30 Code

Number of Channels

Case Connection

Drain to Source Voltage (Vdss)

Drain Current-Max (Abs) (ID)

DS Breakdown Voltage-Min

View Compare
STP20NK50Z

STMicroelectronics

ACTIVE (Last Updated: 8 months ago)

12 Weeks

Through Hole

Through Hole

TO-220-3

3

4.535924g

SILICON

-50°C~150°C TJ

Tube

SuperMESH™

e3

Active

1 (Unlimited)

3

EAR99

270mOhm

Matte Tin (Sn)

FET General Purpose Power

500V

MOSFET (Metal Oxide)

17A

STP20N

3

1

190W Tc

Single

ENHANCEMENT MODE

190W

28 ns

N-Channel

SWITCHING

270m Ω @ 8.5A, 10V

4.5V @ 100μA

2600pF @ 25V

17A Tc

119nC @ 10V

20ns

10V

±30V

15 ns

70 ns

17A

3.75V

TO-220AB

30V

500V

68A

850 mJ

15.75mm

10.4mm

4.6mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-
STP20NM50FD

STMicroelectronics

ACTIVE (Last Updated: 8 months ago)

16 Weeks

Through Hole

Through Hole

TO-220-3

-

-

SILICON

-65°C~150°C TJ

Tube

FDmesh™

e3

Active

1 (Unlimited)

3

EAR99

250mOhm

Tin (Sn)

FET General Purpose Power

500V

MOSFET (Metal Oxide)

20A

STP20N

3

1

192W Tc

Single

ENHANCEMENT MODE

192W

22 ns

N-Channel

SWITCHING

250m Ω @ 10A, 10V

5V @ 250μA

1380pF @ 25V

20A Tc

53nC @ 10V

20ns

10V

±30V

15 ns

-

20A

-

TO-220AB

30V

500V

80A

700 mJ

-

-

-

-

No

Non-RoHS Compliant

Lead Free

R-PSFM-T3

-

-

-

-

-

STP20NK50Z vs STP20NM50FD
STP28N60M2

STMicroelectronics

ACTIVE (Last Updated: 8 months ago)

16 Weeks

Through Hole

Through Hole

TO-220-3

3

329.988449mg

SILICON

-55°C~150°C TJ

Tube

MDmesh™ II Plus

-

Active

1 (Unlimited)

3

EAR99

-

-

-

-

MOSFET (Metal Oxide)

-

STP28N

-

1

170W Tc

Single

ENHANCEMENT MODE

-

14.5 ns

N-Channel

SWITCHING

150m Ω @ 12A, 10V

4V @ 250μA

1370pF @ 100V

24A Tc

37nC @ 10V

-

10V

±25V

-

100 ns

24A

-

TO-220AB

25V

-

88A

-

15.75mm

10.4mm

4.6mm

-

No

ROHS3 Compliant

Lead Free

-

1

DRAIN

600V

22A

600V

STP20NK50Z vs STP28N60M2
STP21NM60ND

STMicroelectronics

-

-

Through Hole

Through Hole

TO-220-3

3

-

SILICON

150°C TJ

Tube

FDmesh™ II

e3

Obsolete

1 (Unlimited)

3

EAR99

220mOhm

Matte Tin (Sn) - annealed

FET General Purpose Power

-

MOSFET (Metal Oxide)

-

STP21N

3

1

140W Tc

Single

ENHANCEMENT MODE

140W

18 ns

N-Channel

SWITCHING

220m Ω @ 8.5A, 10V

5V @ 250μA

1800pF @ 50V

17A Tc

60nC @ 10V

16ns

10V

±25V

48 ns

70 ns

17A

4V

TO-220AB

25V

600V

68A

-

15.75mm

10.4mm

4.6mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

STP20NK50Z vs STP21NM60ND