STMicroelectronics STP20N95K5

Name: STP20N95K5
Brand: STMicroelectronics
SKU: 2479127-STP20N95K5
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: STP20N95K5

Manufacturer:: STMicroelectronics

Ventron No:: 2479127-STP20N95K5

Description:: MOSFET N-CH 950V 17.5A TO-220

ECAD Model:

Datasheet:: STP20N95K5

Specifications

STMicroelectronics STP20N95K5 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STP20N95K5.

Lifecycle Status
ACTIVE (Last Updated: 7 months ago)
Factory Lead Time
17 Weeks
Contact Plating
Tin
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Series
SuperMESH5™
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Resistance
330MOhm
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Base Part Number
STP20N
Pin Count
3
Number of Elements
1
Power Dissipation-Max
250W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
250W
Turn On Delay Time
17 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
330m Ω @ 9A, 10V
Vgs(th) (Max) @ Id
5V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds
1500pF @ 100V
Current - Continuous Drain (Id) @ 25°C
17.5A Tc
Gate Charge (Qg) (Max) @ Vgs
40nC @ 10V
Rise Time
12ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±30V
Fall Time (Typ)
20 ns
Turn-Off Delay Time
70 ns
Continuous Drain Current (ID)
17.5A
JEDEC-95 Code
TO-220AB
Gate to Source Voltage (Vgs)
30V
Drain to Source Breakdown Voltage
950V
Pulsed Drain Current-Max (IDM)
62A
Height
15.75mm
Length
10.4mm
Width
4.6mm
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

STP20N95K5 Description
STP20N95K5 belongs to the family of N-channel MDmesh? K5 power MOSFETs developed by STMicroelectronics based on its MDmesh? technology. It is able to provide lower on-resistance and superior switching performance based on the strip layout and improved vertical structure. As a result, it is well suited for applications where superior power density and high efficiency are required.

STP20N95K5 Features
Low RDS (on)
Improved vertical structure
Low on-state resistance
Low gate charge
Industry's best FoM (figure of merit)
Supplied in the TO-220 package

STP20N95K5 Applications
Switching applications

STP20N95K5 More Descriptions

N-channel 950 V, 0.275 Ohm typ., 17.5 A MDmesh K5 Power MOSFET in a TO-220 packageCiiva Crawler
STP20N95K5 Series 950 V 330 mOhm N-Channel SuperMESH 5 Power Mosfet - TO-220
Trans MOSFET N-CH 950V 17.5A 3-Pin(3 Tab) TO-220AB Tube
Mosfet, N-Ch, 950V, 17.5A, To-220Ab; Channel Type:N Channel; Drain Source Voltage Vds:950V; Continuous Drain Current Id:17.5A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4V Rohs Compliant: Yes |Stmicroelectronics STP20N95K5
Power Field-Effect Transistor, 15.5A I(D), 950V, 0.33ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Product Comparison

The three parts on the right have similar specifications to STP20N95K5.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Contact Plating

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Series

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Resistance

Subcategory

Technology

Base Part Number

Pin Count

Number of Elements

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

JEDEC-95 Code

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Pulsed Drain Current-Max (IDM)

Height

Length

Width

Radiation Hardening

RoHS Status

Lead Free

Case Connection

Avalanche Energy Rating (Eas)

Weight

Number of Channels

Drain to Source Voltage (Vdss)

Drain Current-Max (Abs) (ID)

DS Breakdown Voltage-Min

Terminal Finish

Threshold Voltage

REACH SVHC

View Compare
STP20N95K5

STMicroelectronics

ACTIVE (Last Updated: 7 months ago)

17 Weeks

Tin

Through Hole

Through Hole

TO-220-3

3

SILICON

-55°C~150°C TJ

Tube

SuperMESH5™

e3

Active

1 (Unlimited)

3

EAR99

330MOhm

FET General Purpose Power

MOSFET (Metal Oxide)

STP20N

3

1

250W Tc

Single

ENHANCEMENT MODE

250W

17 ns

N-Channel

SWITCHING

330m Ω @ 9A, 10V

5V @ 100μA

1500pF @ 100V

17.5A Tc

40nC @ 10V

12ns

10V

±30V

20 ns

70 ns

17.5A

TO-220AB

30V

950V

62A

15.75mm

10.4mm

4.6mm

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-
STP24N60M2

STMicroelectronics

ACTIVE (Last Updated: 8 months ago)

16 Weeks

-

Through Hole

Through Hole

TO-220-3

3

SILICON

-55°C~150°C TJ

Tube

MDmesh™ II Plus

-

Active

1 (Unlimited)

3

EAR99

190MOhm

-

MOSFET (Metal Oxide)

STP24N

-

1

150W Tc

Single

ENHANCEMENT MODE

150W

14 ns

N-Channel

SWITCHING

190m Ω @ 9A, 10V

4V @ 250μA

1060pF @ 100V

18A Tc

29nC @ 10V

9ns

10V

±25V

61 ns

15 ns

18A

TO-220AB

25V

600V

72A

15.75mm

10.4mm

4.6mm

No

ROHS3 Compliant

Lead Free

DRAIN

180 mJ

-

-

-

-

-

-

-

-

STP20N95K5 vs STP24N60M2
STP28N60M2

STMicroelectronics

ACTIVE (Last Updated: 8 months ago)

16 Weeks

-

Through Hole

Through Hole

TO-220-3

3

SILICON

-55°C~150°C TJ

Tube

MDmesh™ II Plus

-

Active

1 (Unlimited)

3

EAR99

-

-

MOSFET (Metal Oxide)

STP28N

-

1

170W Tc

Single

ENHANCEMENT MODE

-

14.5 ns

N-Channel

SWITCHING

150m Ω @ 12A, 10V

4V @ 250μA

1370pF @ 100V

24A Tc

37nC @ 10V

-

10V

±25V

-

100 ns

24A

TO-220AB

25V

-

88A

15.75mm

10.4mm

4.6mm

No

ROHS3 Compliant

Lead Free

DRAIN

-

329.988449mg

1

600V

22A

600V

-

-

-

STP20N95K5 vs STP28N60M2
STP21NM60ND

STMicroelectronics

-

-

-

Through Hole

Through Hole

TO-220-3

3

SILICON

150°C TJ

Tube

FDmesh™ II

e3

Obsolete

1 (Unlimited)

3

EAR99

220mOhm

FET General Purpose Power

MOSFET (Metal Oxide)

STP21N

3

1

140W Tc

Single

ENHANCEMENT MODE

140W

18 ns

N-Channel

SWITCHING

220m Ω @ 8.5A, 10V

5V @ 250μA

1800pF @ 50V

17A Tc

60nC @ 10V

16ns

10V

±25V

48 ns

70 ns

17A

TO-220AB

25V

600V

68A

15.75mm

10.4mm

4.6mm

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

Matte Tin (Sn) - annealed

4V

No SVHC

STP20N95K5 vs STP21NM60ND