STMicroelectronics STP200NF04
- Part Number:
- STP200NF04
- Manufacturer:
- STMicroelectronics
- Ventron No:
- 2478462-STP200NF04
- Description:
- MOSFET N-CH 40V 120A TO-220
- ECAD Model:
-
- Datasheet:
- STP200NF04, STB200NF04(-1)
STMicroelectronics STP200NF04 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STP200NF04.
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-220-3
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~175°C TJ
- PackagingTube
- SeriesSTripFET™ II
- JESD-609 Codee3
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- SubcategoryFET General Purpose Power
- Voltage - Rated DC40V
- TechnologyMOSFET (Metal Oxide)
- Current Rating120A
- Base Part NumberSTP200
- Pin Count3
- Number of Elements1
- Power Dissipation-Max310W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation310W
- Turn On Delay Time30 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs3.7m Ω @ 90A, 10V
- Vgs(th) (Max) @ Id4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds5100pF @ 25V
- Current - Continuous Drain (Id) @ 25°C120A Tc
- Gate Charge (Qg) (Max) @ Vgs210nC @ 10V
- Rise Time320ns
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Fall Time (Typ)120 ns
- Turn-Off Delay Time140 ns
- Continuous Drain Current (ID)120A
- Threshold Voltage4V
- JEDEC-95 CodeTO-220AB
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage40V
- Pulsed Drain Current-Max (IDM)480A
- Height15.75mm
- Length10.4mm
- Width4.6mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
STP200NF04 Description
The STP200NF04 MOSFET is the newest iteration of STMicroelectronics' "Single Feature SizeTM" strip-based technology. The resulting transistor has a high packing density for low on-resistance, tough avalanche properties, and fewer key alignment stages, resulting in exceptional manufacturing repeatability.
STP200NF04 Features
100% avalanche tested
Standard threshold drive
STP200NF04 Applications
Automotive
High current
High switching speed
The STP200NF04 MOSFET is the newest iteration of STMicroelectronics' "Single Feature SizeTM" strip-based technology. The resulting transistor has a high packing density for low on-resistance, tough avalanche properties, and fewer key alignment stages, resulting in exceptional manufacturing repeatability.
STP200NF04 Features
100% avalanche tested
Standard threshold drive
STP200NF04 Applications
Automotive
High current
High switching speed
STP200NF04 More Descriptions
Transistor MOSFET N-CH 40V 120A 3-Pin (3 Tab) TO-220 Tube
N-CHANNEL 40V - 120A TO-220 STripFET™ II MOSFET
N-Channel 40 V 3.7 mOhm Flange Mount SuperFET II Power Mosfet - TO-220
Power Field-Effect Transistor, 120A I(D), 40V, 0.0037ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N CH, 40V, 120A, TO-220; Transistor Polarity: N Channel; Continuous Drain Current Id: 90A; Drain Source Voltage Vds: 40V; On Resistance Rds(on): 0.0033ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 310W; Transistor Case Style: TO-220; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (17-Dec-2015); Current Id Max: 120A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 175°C; Termination Type: Through Hole; Transistor Type: Power MOSFET; Voltage Vds Typ: 40V; Voltage Vgs Max: 20V; Voltage Vgs Rds on Measurement: 10V
N-CHANNEL 40V - 120A TO-220 STripFET™ II MOSFET
N-Channel 40 V 3.7 mOhm Flange Mount SuperFET II Power Mosfet - TO-220
Power Field-Effect Transistor, 120A I(D), 40V, 0.0037ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N CH, 40V, 120A, TO-220; Transistor Polarity: N Channel; Continuous Drain Current Id: 90A; Drain Source Voltage Vds: 40V; On Resistance Rds(on): 0.0033ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 310W; Transistor Case Style: TO-220; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (17-Dec-2015); Current Id Max: 120A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 175°C; Termination Type: Through Hole; Transistor Type: Power MOSFET; Voltage Vds Typ: 40V; Voltage Vgs Max: 20V; Voltage Vgs Rds on Measurement: 10V
The three parts on the right have similar specifications to STP200NF04.
-
ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingSeriesJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishSubcategoryVoltage - Rated DCTechnologyCurrent RatingBase Part NumberPin CountNumber of ElementsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageJEDEC-95 CodeGate to Source Voltage (Vgs)Drain to Source Breakdown VoltagePulsed Drain Current-Max (IDM)HeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeContact PlatingResistanceAvalanche Energy Rating (Eas)Lifecycle StatusFactory Lead TimeTerminationDrain Current-Max (Abs) (ID)Dual Supply VoltageNominal VgsView Compare
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STP200NF04Through HoleThrough HoleTO-220-33SILICON-55°C~175°C TJTubeSTripFET™ IIe3Obsolete1 (Unlimited)3EAR99Tin (Sn)FET General Purpose Power40VMOSFET (Metal Oxide)120ASTP20031310W TcSingleENHANCEMENT MODE310W30 nsN-ChannelSWITCHING3.7m Ω @ 90A, 10V4V @ 250μA5100pF @ 25V120A Tc210nC @ 10V320ns10V±20V120 ns140 ns120A4VTO-220AB20V40V480A15.75mm10.4mm4.6mmNo SVHCNoROHS3 CompliantLead Free---------- -
Through HoleThrough HoleTO-220-33SILICON150°C TJTubeFDmesh™ IIe3Obsolete1 (Unlimited)3EAR99-FET General Purpose Power-MOSFET (Metal Oxide)-STP23N31150W TcSingleENHANCEMENT MODE150W21 nsN-ChannelSWITCHING180m Ω @ 10A, 10V5V @ 250μA2100pF @ 50V19.5A Tc69nC @ 10V45ns10V±25V40 ns90 ns19.5A4VTO-220AB25V600V78A15.75mm10.4mm4.6mmNo SVHCNoROHS3 CompliantLead FreeTin180mOhm700 mJ------
-
Through HoleThrough HoleTO-220-33SILICON150°C TJTubeFDmesh™ IIe3Obsolete1 (Unlimited)3EAR99Matte Tin (Sn) - annealedFET General Purpose Power-MOSFET (Metal Oxide)-STP21N31140W TcSingleENHANCEMENT MODE140W18 nsN-ChannelSWITCHING220m Ω @ 8.5A, 10V5V @ 250μA1800pF @ 50V17A Tc60nC @ 10V16ns10V±25V48 ns70 ns17A4VTO-220AB25V600V68A15.75mm10.4mm4.6mmNo SVHCNoROHS3 CompliantLead Free-220mOhm-------
-
Through HoleThrough HoleTO-220-33SILICON150°C TJTubeMDmesh™ IIe3Active1 (Unlimited)3EAR99Matte Tin (Sn)FET General Purpose Power-MOSFET (Metal Oxide)-STP26N31140W TcSingleENHANCEMENT MODE140W13 nsN-ChannelSWITCHING165m Ω @ 10A, 10V4V @ 250μA1800pF @ 50V20A Tc60nC @ 10V25ns10V±30V50 ns85 ns10A-TO-220AB25V600V80A15.75mm10.4mm4.6mmNo SVHCNoROHS3 CompliantLead Free-165MOhm-ACTIVE (Last Updated: 8 months ago)16 WeeksThrough Hole20A600V3 V
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