STMicroelectronics STN4NF20L

Name: STN4NF20L
Brand: STMicroelectronics
SKU: 2480656-STN4NF20L
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: STN4NF20L

Manufacturer:: STMicroelectronics

Ventron No:: 2480656-STN4NF20L

Description:: MOSFET N-CH 200V 1A SOT-223

ECAD Model:

Datasheet:: STN4NF20L

Specifications

STMicroelectronics STN4NF20L technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STN4NF20L.

Lifecycle Status
ACTIVE (Last Updated: 8 months ago)
Factory Lead Time
12 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-261-4, TO-261AA
Number of Pins
4
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Series
STripFET™ II
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
4
ECCN Code
EAR99
Resistance
1.5Ohm
Terminal Finish
Matte Tin (Sn)
Subcategory
FET General Purpose Powers
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Time@Peak Reflow Temperature-Max (s)
30
Base Part Number
STN4N
Pin Count
4
Number of Elements
1
Number of Channels
1
Power Dissipation-Max
3.3W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
3.3W
Case Connection
DRAIN
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
1.5 Ω @ 500mA, 10V
Vgs(th) (Max) @ Id
3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
150pF @ 25V
Current - Continuous Drain (Id) @ 25°C
1A Tc
Gate Charge (Qg) (Max) @ Vgs
0.9nC @ 10V
Rise Time
2ns
Drive Voltage (Max Rds On,Min Rds On)
5V 10V
Vgs (Max)
±20V
Fall Time (Typ)
10.4 ns
Continuous Drain Current (ID)
1A
Threshold Voltage
2V
Gate to Source Voltage (Vgs)
20V
Drain Current-Max (Abs) (ID)
1A
Drain to Source Breakdown Voltage
200V
Pulsed Drain Current-Max (IDM)
4A
Max Junction Temperature (Tj)
150°C
Height
1.9mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

STN4NF20L Description
STN4NF20L is an N-channel Power MOSFET transistor from the manufacturer STMicroelectronics with a drain to source voltage of 200V. The operating temperature of the STN4NF20L is -55°C~150°C TJ and its maximum power dissipation is 3.3W Tc. This STripFETTM-based N-channel 200 V device from STMicroelectronics was specifically created to reduce gate charge and input capacitance. Therefore, it is appropriate for use as the primary switch in modern, high-efficiency isolated DC-DC converters.

STN4NF20L Features
100% avalanche tested
Low gate charge
Exceptional dv/dt capability

STN4NF20L Applications
Power Management
Consumer Electronics
Portable Devices
Industrial
Switching applications

STN4NF20L More Descriptions

N-channel 200 V, 1.1 Ohm typ., 1 A STripFET(TM) II Power MOSFET in SOT-223 package
STN4NF20L: 200 V 1 A N-Ch. Low Gate Charge STripFET II Power Mosfet - SOT-223
Trans MOSFET N-CH 200V 1A 4-Pin(3 Tab) SOT-223 T/R
MOSFET, N-CH, 200V, 1A, SOT-223-4; Transistor Polarity:N Channel; Continuous Drain Current Id:1A; Source Voltage Vds:200V; On Resistance
MOSFET, N-CH, 200V, 1A, SOT-223-4; Transistor Polarity: N Channel; Continuous Drain Current Id: 1A; Drain Source Voltage Vds: 200V; On Resistance Rds(on): 1.1ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2V; Power Dissipation Pd: 3.3W; Transistor Case Style: SOT-223; No. of Pins: 4Pins; Operating Temperature Max: 150°C; Product Range: StripFET II Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (17-Dec-2015)

Certification