STN4NF03L

STMicroelectronics STN4NF03L

Part Number:
STN4NF03L
Manufacturer:
STMicroelectronics
Ventron No:
2481543-STN4NF03L
Description:
MOSFET N-CH 30V 6.5A SOT223
ECAD Model:
Datasheet:
STN4NF03L

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Specifications
STMicroelectronics STN4NF03L technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STN4NF03L.
  • Lifecycle Status
    ACTIVE (Last Updated: 8 months ago)
  • Factory Lead Time
    12 Weeks
  • Contact Plating
    Tin
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-261-4, TO-261AA
  • Number of Pins
    4
  • Weight
    4.535924g
  • Transistor Element Material
    SILICON
  • Manufacturer Package Identifier
    SOT-223-P008
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    STripFET™ II
  • JESD-609 Code
    e3
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    4
  • ECCN Code
    EAR99
  • Resistance
    50mOhm
  • Additional Feature
    LOW THRESHOLD
  • Subcategory
    FET General Purpose Power
  • Voltage - Rated DC
    30V
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Current Rating
    6.5A
  • Time@Peak Reflow Temperature-Max (s)
    30
  • Base Part Number
    STN4N
  • Pin Count
    4
  • Number of Elements
    1
  • Number of Channels
    1
  • Power Dissipation-Max
    3.3W Tc
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    3.3W
  • Case Connection
    DRAIN
  • Turn On Delay Time
    11 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    50m Ω @ 2A, 10V
  • Vgs(th) (Max) @ Id
    1V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    330pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    6.5A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    9nC @ 10V
  • Rise Time
    100ns
  • Drive Voltage (Max Rds On,Min Rds On)
    5V 10V
  • Vgs (Max)
    ±16V
  • Fall Time (Typ)
    22 ns
  • Turn-Off Delay Time
    35 ns
  • Continuous Drain Current (ID)
    6.5A
  • Threshold Voltage
    1V
  • Gate to Source Voltage (Vgs)
    16V
  • Drain Current-Max (Abs) (ID)
    4A
  • Drain to Source Breakdown Voltage
    30V
  • Pulsed Drain Current-Max (IDM)
    26A
  • Max Junction Temperature (Tj)
    150°C
  • Height
    1.8mm
  • Length
    6.5mm
  • Width
    3.5mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
STN4NF03L Overview
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 330pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 6.5A.With a drain-source breakdown voltage of 30V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 30V.4A is the drain current of this device, which is the maximum continuous current transistor can carry.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 35 ns.Peak drain current for this device is 26A, which is its maximum pulsed drain current.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 11 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.1V is the threshold voltage at which an electrical device activates any of its operations.Using drive voltage (5V 10V) reduces this device's overall power consumption.

STN4NF03L Features
a continuous drain current (ID) of 6.5A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 35 ns
based on its rated peak drain current 26A.
a threshold voltage of 1V


STN4NF03L Applications
There are a lot of STMicroelectronics
STN4NF03L applications of single MOSFETs transistors.


Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
STN4NF03L More Descriptions
N-Channel 30V - 0.039 Ohm - 4A - SOT-223 STripFET(TM) POWER MOSFET
N-Channel 30 V 0.05 Ohm Surface Mount STripFET™ II MosFet - SOT-223
MOSFET N-CH 30V 6.5A SOT223 / Trans MOSFET N-CH 30V 6.5A 4-Pin(3 Tab) SOT-223 T/R
MOSFET, N-CH, 30V, 6.5A, SOT-223; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:6.5A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1V RoHS Compliant: Yes
MOSFET, N, SOT-223; Transistor Polarity: N Channel; Continuous Drain Current Id: 6.5A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.039ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1V; Power Dissipation Pd: 3.3W; Transistor Case Style: SOT-223; No. of Pins: 4Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (17-Dec-2015); Current Id Max: 6.5A; On State Resistance @ Vgs = 4.5V: 60mohm; On State resistance @ Vgs = 10V: 50mohm; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C; Pulse Current Idm: 26A; SMD Marking: N4NF03; Voltage Vds Typ: 30V; Voltage Vgs Max: 1V; Voltage Vgs Rds on Measurement: 10V; Voltage Vgs th Min: 1V
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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