STN2NF10

STMicroelectronics STN2NF10

Part Number:
STN2NF10
Manufacturer:
STMicroelectronics
Ventron No:
2477958-STN2NF10
Description:
MOSFET N-CH 100V 2.4A SOT-223
ECAD Model:
Datasheet:
STN2NF10

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Specifications
STMicroelectronics STN2NF10 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STN2NF10.
  • Lifecycle Status
    ACTIVE (Last Updated: 8 months ago)
  • Factory Lead Time
    12 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-261-4, TO-261AA
  • Number of Pins
    4
  • Weight
    4.535924g
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    STripFET™ II
  • JESD-609 Code
    e3
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    4
  • ECCN Code
    EAR99
  • Resistance
    260mOhm
  • Terminal Finish
    Matte Tin (Sn) - annealed
  • Subcategory
    FET General Purpose Power
  • Voltage - Rated DC
    100V
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Current Rating
    2A
  • Time@Peak Reflow Temperature-Max (s)
    30
  • Base Part Number
    STN2N
  • Pin Count
    4
  • Number of Elements
    1
  • Power Dissipation-Max
    3.3W Tc
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    3.3W
  • Turn On Delay Time
    6 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    260m Ω @ 1.2A, 10V
  • Vgs(th) (Max) @ Id
    4V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    280pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    2.4A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    14nC @ 10V
  • Rise Time
    10ns
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    3 ns
  • Turn-Off Delay Time
    20 ns
  • Continuous Drain Current (ID)
    2A
  • Threshold Voltage
    4V
  • Gate to Source Voltage (Vgs)
    20V
  • Drain Current-Max (Abs) (ID)
    2A
  • Drain to Source Breakdown Voltage
    100V
  • Pulsed Drain Current-Max (IDM)
    8A
  • Avalanche Energy Rating (Eas)
    300 mJ
  • Height
    1.8mm
  • Length
    6.5mm
  • Width
    3.5mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
STN2NF10 Overview
When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 300 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 280pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 2A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=100V. And this device has 100V drain to source breakdown voltage.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 2A.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 20 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 8A.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 6 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Threshold voltage is the point at which an electrical device is set to activate any one of its operations, and this transistor has 4V threshold voltage. By using drive voltage (10V), this device helps reduce its overall power consumption.

STN2NF10 Features
the avalanche energy rating (Eas) is 300 mJ
a continuous drain current (ID) of 2A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 20 ns
based on its rated peak drain current 8A.
a threshold voltage of 4V


STN2NF10 Applications
There are a lot of STMicroelectronics
STN2NF10 applications of single MOSFETs transistors.


LCD/LED TV
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
STN2NF10 More Descriptions
N-channel 100 V, 0.23 Ohm, 2.4 A STripFET(TM) II POWER MOSFET in SOT-223 package
MOSFET N-CH 100V 2.4A SOT-223 / Trans MOSFET N-CH 100V 2.4A 4-Pin(3 Tab) SOT-223 T/R
N Channel Mosfet, 100V, 2A, Sot-223; Transistor Polarity:N Channel; Continuous Drain Current Id:2A; Drain Source Voltage Vds:100V; On Resistance Rds(On):230Mohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; No. Of Pins:4 Rohs Compliant: Yes |Stmicroelectronics STN2NF10
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 2.4 / Drain-Source Voltage (Vds) V = 100 / ON Resistance (Rds(on)) mOhm = 260 / Gate-Source Voltage V = 20 / Fall Time ns = 3 / Rise Time ns = 10 / Turn-OFF Delay Time ns = 20 / Turn-ON Delay Time ns = 6 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-223 / Pins = 3 / Mounting Type = SMD / Packaging = Tape & Reel / Power Dissipation (Pd) W = 3.3
MOSFET, N, SOT-223; Transistor Polarity: N Channel; Continuous Drain Current Id: 2A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.23ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 3.3W; Transistor Case Style: SOT-223; No. of Pins: 4Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (17-Dec-2015); Current Id Max: 2A; On State resistance @ Vgs = 10V: 260mohm; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C; Pulse Current Idm: 8A; SMD Marking: STN2NF10; Voltage Vds Typ: 100V; Voltage Vgs Max: 4V; Voltage Vgs Rds on Measurement: 10V
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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