STMicroelectronics STN2NE10L

Name: STN2NE10L
Brand: STMicroelectronics
SKU: 2487992-STN2NE10L
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: STN2NE10L

Manufacturer:: STMicroelectronics

Ventron No:: 2487992-STN2NE10L

Description:: MOSFET N-CH 100V 1.8A SOT-223

ECAD Model:

Datasheet:: STN2NE10L

Specifications

STMicroelectronics STN2NE10L technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STN2NE10L.

Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-261-4, TO-261AA
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Series
STripFET™
JESD-609 Code
e3
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
4
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Additional Feature
LOW THRESHOLD
Subcategory
FET General Purpose Power
Voltage - Rated DC
100V
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
1.8A
Time@Peak Reflow Temperature-Max (s)
40
Base Part Number
STN2N
Pin Count
4
JESD-30 Code
R-PDSO-G4
Qualification Status
Not Qualified
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max
2.5W Tc
Operating Mode
ENHANCEMENT MODE
Power Dissipation
2.5W
Case Connection
DRAIN
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
400m Ω @ 1A, 10V
Vgs(th) (Max) @ Id
3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
345pF @ 25V
Current - Continuous Drain (Id) @ 25°C
1.8A Tc
Gate Charge (Qg) (Max) @ Vgs
14nC @ 5V
Rise Time
17ns
Drive Voltage (Max Rds On,Min Rds On)
5V 10V
Vgs (Max)
±20V
Fall Time (Typ)
8 ns
Turn-Off Delay Time
22 ns
Continuous Drain Current (ID)
1.8A
Gate to Source Voltage (Vgs)
20V
Drain Current-Max (Abs) (ID)
2A
Drain-source On Resistance-Max
0.45Ohm
Drain to Source Breakdown Voltage
100V
Pulsed Drain Current-Max (IDM)
7.2A
Avalanche Energy Rating (Eas)
20 mJ
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

STN2NE10L Description
STN2NE10L is a 100v STripFET? Power MOSFET. This Power MOSFET STN2NE10L is the latest development of STMicroelectronics' unique "Single Feature Size?" strip-based process. The resulting transistor STN2NE10L shows extremely high packing density for low on-resistance, rugged avalanche characteristics, and less critical alignment steps therefore a remarkable manufacturing reproducibility.

STN2NE10L Features
Exceptional dv/dt capability
Avalanche rugged technology
100% avalanche tested
Low threshold drive
Drain current (continuous) at TC = 25??C: 1.8A

STN2NE10L Applications
Rotary Switch
DIP Switch
Limit Switch
Reed Switch
Rocker Switch
Toggle Switch

STN2NE10L More Descriptions

N-Channel 100V - 0.33 Ohm - 2A - SOT-223 STripFET MOSFET
Power MOSFET Transistors N-Ch 100 Volt 2 Amp
Power Field-Effect Transistor, 1.8A I(D), 100V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET, N, SMD, SOT-223; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:100V; Current, Id Cont:1.8A; Resistance, Rds On:0.4ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:1.7V; Case Style:SOT-223; Termination Type:SMD; Resistance, Rds on @ Vgs = 10V:0.4ohm; Resistance, Rds on @ Vgs = 4.5V:0.45ohm; Resistance, Rds on Max:0.45ohm; Voltage, Rds Measurement:10V

Certification