STMicroelectronics STI42N65M5

Name: STI42N65M5
Brand: STMicroelectronics
SKU: 2488118-STI42N65M5
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: STI42N65M5

Manufacturer:: STMicroelectronics

Ventron No:: 2488118-STI42N65M5

Description:: MOSFET N-CH 650V 33A I2PAK

ECAD Model:

Datasheet:: STx42N65M5

Specifications

STMicroelectronics STI42N65M5 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STI42N65M5.

Lifecycle Status
ACTIVE (Last Updated: 8 months ago)
Factory Lead Time
17 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-262-3 Long Leads, I2Pak, TO-262AA
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Series
MDmesh™ V
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Base Part Number
STI42N
Pin Count
3
Number of Elements
1
Power Dissipation-Max
190W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
190W
Turn On Delay Time
61 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
79m Ω @ 16.5A, 10V
Vgs(th) (Max) @ Id
5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
4650pF @ 100V
Current - Continuous Drain (Id) @ 25°C
33A Tc
Gate Charge (Qg) (Max) @ Vgs
100nC @ 10V
Rise Time
24ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±25V
Fall Time (Typ)
13 ns
Turn-Off Delay Time
65 ns
Continuous Drain Current (ID)
33A
Threshold Voltage
4V
Gate to Source Voltage (Vgs)
25V
Drain-source On Resistance-Max
0.079Ohm
Drain to Source Breakdown Voltage
650V
Avalanche Energy Rating (Eas)
950 mJ
Nominal Vgs
4 V
Height
9.35mm
Length
10.4mm
Width
4.6mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

STI42N65M5 Overview
Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 950 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 4650pF @ 100V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 33A.With a drain-source breakdown voltage of 650V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 650V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 65 ns.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 61 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.4V is the threshold voltage at which an electrical device activates any of its operations.Using drive voltage (10V) reduces this device's overall power consumption.

STI42N65M5 Features
the avalanche energy rating (Eas) is 950 mJ
a continuous drain current (ID) of 33A
a drain-to-source breakdown voltage of 650V voltage
the turn-off delay time is 65 ns
a threshold voltage of 4V

STI42N65M5 Applications
There are a lot of STMicroelectronics
STI42N65M5 applications of single MOSFETs transistors.

Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification

STI42N65M5 More Descriptions

N-channel 650 V, 0.070 Ohm, 33 A MDmesh(TM) V Power MOSFET in I2PAK
STI42N65M5 Series 650 V 79 mOhm N-Channel MDmesh V Power MOSFET - I2PAK-3
Power Field-Effect Transistor, 33A I(D), 650V, 0.079ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
MOSFET, N CH, 650V, 33A, I2PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:33A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.079ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:190W; Transistor Case Style:TO-262; No. of Pins:3; SVHC:No SVHC (19-Dec-2012)

Product Comparison

The three parts on the right have similar specifications to STI42N65M5.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Series

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Subcategory

Technology

Base Part Number

Pin Count

Number of Elements

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

Gate to Source Voltage (Vgs)

Drain-source On Resistance-Max

Drain to Source Breakdown Voltage

Avalanche Energy Rating (Eas)

Nominal Vgs

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Drain to Source Voltage (Vdss)

Weight

Number of Channels

Case Connection

View Compare
STI42N65M5

STMicroelectronics

ACTIVE (Last Updated: 8 months ago)

17 Weeks

Through Hole

Through Hole

TO-262-3 Long Leads, I2Pak, TO-262AA

3

SILICON

-55°C~150°C TJ

Tube

MDmesh™ V

e3

Active

1 (Unlimited)

3

EAR99

Tin (Sn)

FET General Purpose Power

MOSFET (Metal Oxide)

STI42N

3

1

190W Tc

Single

ENHANCEMENT MODE

190W

61 ns

N-Channel

SWITCHING

79m Ω @ 16.5A, 10V

5V @ 250μA

4650pF @ 100V

33A Tc

100nC @ 10V

24ns

10V

±25V

13 ns

65 ns

33A

4V

25V

0.079Ohm

650V

950 mJ

4 V

9.35mm

10.4mm

4.6mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-
STI40N65M2

STMicroelectronics

ACTIVE (Last Updated: 8 months ago)

12 Weeks

Through Hole

Through Hole

TO-262-3 Long Leads, I2Pak, TO-262AA

3

-

150°C TJ

Tube

MDmesh™ M2

-

Active

1 (Unlimited)

-

EAR99

-

FET General Purpose Power

MOSFET (Metal Oxide)

STI40N

-

-

250W Tc

Single

-

-

15 ns

N-Channel

-

99m Ω @ 16A, 10V

4V @ 250μA

2355pF @ 100V

32A Tc

56.5nC @ 10V

-

10V

±25V

-

96.5 ns

32A

-

25V

-

-

-

-

9.35mm

10.4mm

4.6mm

-

-

ROHS3 Compliant

-

NOT SPECIFIED

NOT SPECIFIED

650V

-

-

-

STI42N65M5 vs STI40N65M2
STI45N10F7

STMicroelectronics

ACTIVE (Last Updated: 8 months ago)

-

Through Hole

Through Hole

TO-262-3 Long Leads, I2Pak, TO-262AA

3

SILICON

-55°C~175°C TJ

Tube

DeepGATE™, STripFET™ VII

-

Active

1 (Unlimited)

3

EAR99

-

-

MOSFET (Metal Oxide)

STI45N

-

1

60W Tc

Single

ENHANCEMENT MODE

-

15 ns

N-Channel

SWITCHING

18m Ω @ 22.5A, 10V

4.5V @ 250μA

1640pF @ 50V

45A Tc

25nC @ 10V

17ns

10V

-

8 ns

24 ns

45A

-

20V

-

100V

-

-

9.35mm

10.4mm

4.6mm

-

No

ROHS3 Compliant

-

-

-

-

2.084002g

1

DRAIN

STI42N65M5 vs STI45N10F7
STI400N4F6

STMicroelectronics

-

-

Through Hole

Through Hole

TO-262-3 Long Leads, I2Pak, TO-262AA

-

-

-55°C~175°C TJ

Tube

DeepGATE™, STripFET™ VI

-

Obsolete

Not Applicable

-

EAR99

-

FET General Purpose Powers

MOSFET (Metal Oxide)

STI400N

-

-

300W Tc

Single

-

-

-

N-Channel

-

1.7m Ω @ 60A, 10V

4.5V @ 250μA

20000pF @ 25V

120A Tc

377nC @ 10V

-

10V

±20V

-

-

120A

-

20V

-

40V

-

-

-

-

-

-

-

ROHS3 Compliant

Lead Free

NOT SPECIFIED

NOT SPECIFIED

-

1.437803g

1

-

STI42N65M5 vs STI400N4F6