STMicroelectronics STFW3N170

Name: STFW3N170
Brand: STMicroelectronics
SKU: 3585943-STFW3N170
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: STFW3N170

Manufacturer:: STMicroelectronics

Ventron No:: 3585943-STFW3N170

Description:: MOSFET N-CH 1700V 2.6A

ECAD Model:

Datasheet:: STFW3N170

Specifications

STMicroelectronics STFW3N170 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STFW3N170.

Lifecycle Status
ACTIVE (Last Updated: 7 months ago)
Factory Lead Time
8 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
ISOWATT218FX
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Series
PowerMESH™
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Subcategory
FET General Purpose Powers
Technology
MOSFET (Metal Oxide)
Terminal Position
SINGLE
Base Part Number
STFW
JESD-30 Code
R-PSFM-T3
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max
63W Tc
Operating Mode
ENHANCEMENT MODE
Case Connection
ISOLATED
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
13 Ω @ 1.3A, 10V
Vgs(th) (Max) @ Id
5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
1100pF @ 100V
Current - Continuous Drain (Id) @ 25°C
2.6A Tc
Gate Charge (Qg) (Max) @ Vgs
44nC @ 10V
Drain to Source Voltage (Vdss)
1700V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±30V
Continuous Drain Current (ID)
2.6A
Drain Current-Max (Abs) (ID)
2.3A
Pulsed Drain Current-Max (IDM)
10.4A
DS Breakdown Voltage-Min
1700V
Avalanche Energy Rating (Eas)
2 mJ
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

STFW3N170 Description The STFW3N170 Power MOSFET is designed using STMicroelectronics' MESH OVERLAYTM consolidated strip-layout process. As a result, the product matches or exceeds the performance of comparable standard parts from other manufacturers.
STFW3N170 Features High-speed switching
100% avalanche tested
Intrinsic capacitances and Qg minimized
TO-3PF for higher creepage between leads
STFW3N170 Applications Linear Amplifiers
Inductive Switching
Audio amplifier
Any Signal Amplification
Drive Load Under 500mA
Audio Amplifier Stages

STFW3N170 More Descriptions

N-channel 1700 V, 7 Ohm typ., 2.6 A, PowerMESH Power MOSFET in TO-3PF package
Trans MOSFET N-CH 1.7KV 2.6A 3-Pin(3 Tab) TO-3PF Tube
Mosfet, N-Ch, 1.7Kv, 2.6A, 150Deg C, 63W; Transistor Polarity:N Channel; Continuous Drain Current Id:2.6A; Drain Source Voltage Vds:1.7Kv; On Resistance Rds(On):7Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Rohs Compliant: Yes |Stmicroelectronics STFW3N170
Power Field-Effect Transistor, 2.6A I(D), 1700V, 13ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET N-CH 1700V 2.6A ISOWATT
SSR RELAY SPST-NO 250MA 0-400V

Product Comparison

The three parts on the right have similar specifications to STFW3N170.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Mount

Mounting Type

Package / Case

Transistor Element Material

Operating Temperature

Packaging

Series

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Subcategory

Technology

Terminal Position

Base Part Number

JESD-30 Code

Number of Elements

Configuration

Power Dissipation-Max

Operating Mode

Case Connection

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Continuous Drain Current (ID)

Drain Current-Max (Abs) (ID)

Pulsed Drain Current-Max (IDM)

DS Breakdown Voltage-Min

Avalanche Energy Rating (Eas)

RoHS Status

Lead Free

Number of Pins

JESD-609 Code

Pbfree Code

Resistance

Terminal Finish

Additional Feature

Pin Count

Element Configuration

Power Dissipation

Turn On Delay Time

Rise Time

Fall Time (Typ)

Turn-Off Delay Time

Threshold Voltage

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Height

Length

Width

REACH SVHC

Radiation Hardening

Weight

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Number of Channels

Drain-source On Resistance-Max

Contact Plating

View Compare
STFW3N170

STMicroelectronics

ACTIVE (Last Updated: 7 months ago)

8 Weeks

Through Hole

Through Hole

ISOWATT218FX

SILICON

-55°C~150°C TJ

Tube

PowerMESH™

Active

1 (Unlimited)

3

EAR99

FET General Purpose Powers

MOSFET (Metal Oxide)

SINGLE

STFW

R-PSFM-T3

1

SINGLE WITH BUILT-IN DIODE

63W Tc

ENHANCEMENT MODE

ISOLATED

N-Channel

SWITCHING

13 Ω @ 1.3A, 10V

5V @ 250μA

1100pF @ 100V

2.6A Tc

44nC @ 10V

1700V

10V

±30V

2.6A

2.3A

10.4A

1700V

2 mJ

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
STFW60N65M5

STMicroelectronics

-

-

Through Hole

Through Hole

ISOWATT218FX

SILICON

150°C TJ

Tube

MDmesh™ V

Obsolete

1 (Unlimited)

3

EAR99

FET General Purpose Power

MOSFET (Metal Oxide)

-

STFW

-

1

-

79W Tc

ENHANCEMENT MODE

-

N-Channel

SWITCHING

59m Ω @ 23A, 10V

5V @ 250μA

6810pF @ 100V

46A Tc

139nC @ 10V

-

10V

±25V

46A

-

-

-

-

ROHS3 Compliant

Lead Free

3

e3

yes

59MOhm

Matte Tin (Sn)

ULTRA-LOW RESISTANCE

3

Single

79W

90 ns

11ns

16 ns

13 ns

4V

25V

650V

26.7mm

15.7mm

5.7mm

No SVHC

No

-

-

-

-

-

-

STFW3N170 vs STFW60N65M5
STFW38N65M5

STMicroelectronics

-

12 Weeks

Through Hole

Through Hole

ISOWATT218FX

SILICON

150°C TJ

Tube

MDmesh™ V

Active

1 (Unlimited)

3

EAR99

-

MOSFET (Metal Oxide)

-

STFW

-

1

-

57W Tc

ENHANCEMENT MODE

ISOLATED

N-Channel

SWITCHING

95m Ω @ 15A, 10V

5V @ 250μA

3000pF @ 100V

30A Tc

71nC @ 10V

-

10V

±25V

30A

-

-

-

660 mJ

ROHS3 Compliant

-

3

-

-

-

-

ULTRA LOW RESISTANCE

-

Single

-

-

9ns

9 ns

-

-

25V

650V

26.7mm

15.7mm

5.7mm

-

-

6.961991g

NOT SPECIFIED

NOT SPECIFIED

1

0.095Ohm

-

STFW3N170 vs STFW38N65M5
STFW3N150

STMicroelectronics

ACTIVE (Last Updated: 7 months ago)

8 Weeks

Through Hole

Through Hole

ISOWATT218FX

SILICON

150°C TJ

Tube

PowerMESH™

Active

1 (Unlimited)

3

EAR99

FET General Purpose Power

MOSFET (Metal Oxide)

-

STFW

-

1

-

63W Tc

ENHANCEMENT MODE

ISOLATED

N-Channel

SWITCHING

9 Ω @ 1.3A, 10V

5V @ 250μA

939pF @ 25V

2.5A Tc

29.3nC @ 10V

1500V

10V

±30V

2.5A

-

-

-

450 mJ

ROHS3 Compliant

Lead Free

3

e3

-

9Ohm

-

-

3

Single

63W

24 ns

47ns

61 ns

45 ns

4V

30V

1.5kV

26.7mm

15.7mm

5.7mm

No SVHC

No

-

-

-

-

-

Tin

STFW3N170 vs STFW3N150