STMicroelectronics STFW3N150

Name: STFW3N150
Brand: STMicroelectronics
SKU: 2478440-STFW3N150
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: STFW3N150

Manufacturer:: STMicroelectronics

Ventron No:: 2478440-STFW3N150

Description:: MOSFET N-CH 1500V 2.5A TO3PF

ECAD Model:

Datasheet:: STFW3N150

Specifications

STMicroelectronics STFW3N150 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STFW3N150.

Lifecycle Status
ACTIVE (Last Updated: 7 months ago)
Factory Lead Time
8 Weeks
Contact Plating
Tin
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
ISOWATT218FX
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tube
Series
PowerMESH™
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Resistance
9Ohm
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Base Part Number
STFW
Pin Count
3
Number of Elements
1
Power Dissipation-Max
63W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
63W
Case Connection
ISOLATED
Turn On Delay Time
24 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
9 Ω @ 1.3A, 10V
Vgs(th) (Max) @ Id
5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
939pF @ 25V
Current - Continuous Drain (Id) @ 25°C
2.5A Tc
Gate Charge (Qg) (Max) @ Vgs
29.3nC @ 10V
Rise Time
47ns
Drain to Source Voltage (Vdss)
1500V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±30V
Fall Time (Typ)
61 ns
Turn-Off Delay Time
45 ns
Continuous Drain Current (ID)
2.5A
Threshold Voltage
4V
Gate to Source Voltage (Vgs)
30V
Drain to Source Breakdown Voltage
1.5kV
Avalanche Energy Rating (Eas)
450 mJ
Height
26.7mm
Length
15.7mm
Width
5.7mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

STFW3N150 Description
STFW3N150 is a type of PowerMESH power MOSFET developed by STMicroelectronics. It is designed utilizing the STMicroelectronics consolidated strip-layout-based MESH OVERLAY process. It can be found in the TO-3PF, H2PAK-2, TO-220, or TO247 packages with the purpose of saving board space. Based on its 100% avalanche tested, intrinsic capacitances and Qg minimized, and high-speed switching, STFW3N150 power MOSFET is well suited for various applications.

STFW3N150 Features
100% avalanche tested
Intrinsic capacitances and Qg minimized
High-speed switching
Fully isolated TO-3PF plastic package, creepage distance path is 5.4 mm (typ.)

STFW3N150 Applications
Switching applications

STFW3N150 More Descriptions

N-channel 1500 V, 6 Ohm, 2.5 A, PowerMESH(TM) power MOSFET in TO-3PF
Mosfet, N-Ch, 1.5Kv, 2.5A, To-3Pf; Channel Type:N Channel; Drain Source Voltage Vds:1.5Kv; Continuous Drain Current Id:2.5A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4V Rohs Compliant: Yes |Stmicroelectronics STFW3N150.
MOSFET, N CH, 1500V, 2.5A, TO3PF; Transistor Polarity:N Channel; Continuous Drain Current Id:2.5A; Drain Source Voltage Vds:1.5kV; On Resistance Rds(on):6ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:63W; Transistor Case Style:TO-3PF; No. of Pins:3; SVHC:No SVHC (19-Dec-2012)

Product Comparison

The three parts on the right have similar specifications to STFW3N150.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Contact Plating

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Series

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Resistance

Subcategory

Technology

Base Part Number

Pin Count

Number of Elements

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Case Connection

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Avalanche Energy Rating (Eas)

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Pbfree Code

Terminal Finish

Additional Feature

View Compare
STFW3N150

STMicroelectronics

ACTIVE (Last Updated: 7 months ago)

8 Weeks

Tin

Through Hole

Through Hole

ISOWATT218FX

3

SILICON

150°C TJ

Tube

PowerMESH™

e3

Active

1 (Unlimited)

3

EAR99

9Ohm

FET General Purpose Power

MOSFET (Metal Oxide)

STFW

3

1

63W Tc

Single

ENHANCEMENT MODE

63W

ISOLATED

24 ns

N-Channel

SWITCHING

9 Ω @ 1.3A, 10V

5V @ 250μA

939pF @ 25V

2.5A Tc

29.3nC @ 10V

47ns

1500V

10V

±30V

61 ns

45 ns

2.5A

4V

30V

1.5kV

450 mJ

26.7mm

15.7mm

5.7mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-
STFW40N60M2

STMicroelectronics

ACTIVE (Last Updated: 7 months ago)

12 Weeks

-

Through Hole

Through Hole

ISOWATT218FX

3

-

-55°C~150°C TJ

Tube

MDmesh™ II Plus

-

Active

1 (Unlimited)

-

EAR99

-

-

MOSFET (Metal Oxide)

STFW

-

-

63W Tc

Single

-

-

-

20.5 ns

N-Channel

-

88m Ω @ 17A, 10V

4V @ 250μA

2500pF @ 100V

34A Tc

57nC @ 10V

-

600V

10V

±25V

-

96 ns

34A

-

25V

-

-

26.7mm

15.7mm

5.7mm

-

-

ROHS3 Compliant

-

NOT SPECIFIED

NOT SPECIFIED

-

-

-

STFW3N150 vs STFW40N60M2
STFW60N65M5

STMicroelectronics

-

-

-

Through Hole

Through Hole

ISOWATT218FX

3

SILICON

150°C TJ

Tube

MDmesh™ V

e3

Obsolete

1 (Unlimited)

3

EAR99

59MOhm

FET General Purpose Power

MOSFET (Metal Oxide)

STFW

3

1

79W Tc

Single

ENHANCEMENT MODE

79W

-

90 ns

N-Channel

SWITCHING

59m Ω @ 23A, 10V

5V @ 250μA

6810pF @ 100V

46A Tc

139nC @ 10V

11ns

-

10V

±25V

16 ns

13 ns

46A

4V

25V

650V

-

26.7mm

15.7mm

5.7mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

yes

Matte Tin (Sn)

ULTRA-LOW RESISTANCE

STFW3N150 vs STFW60N65M5
STFW1N105K3

STMicroelectronics

NRND (Last Updated: 8 months ago)

-

-

Through Hole

Through Hole

ISOWATT218FX

3

-

-55°C~150°C TJ

Tube

SuperMESH3™

-

Active

1 (Unlimited)

-

EAR99

-

FET General Purpose Powers

MOSFET (Metal Oxide)

STFW

-

-

20W Tc

Single

-

20W

-

6 ns

N-Channel

-

11 Ω @ 600mA, 10V

4.5V @ 50μA

180pF @ 100V

1.4A Tc

13nC @ 10V

7ns

1050V

10V

±30V

50 ns

27 ns

1.4A

-

30V

1.05kV

-

26.7mm

15.7mm

5.7mm

-

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

STFW3N150 vs STFW1N105K3