STMicroelectronics STF8NM60N
- Part Number:
- STF8NM60N
- Manufacturer:
- STMicroelectronics
- Ventron No:
- 3071005-STF8NM60N
- Description:
- MOSFET N-CH 600V 7A TO-220FP
- Datasheet:
- STF8NM60N
STMicroelectronics STF8NM60N technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STF8NM60N.
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-220-3 Full Pack
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- SeriesMDmesh™ II
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- Terminal FinishMATTE TIN
- Additional FeatureAVALANCHE RATED
- SubcategoryFET General Purpose Power
- TechnologyMOSFET (Metal Oxide)
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Base Part NumberSTF8N
- Pin Count3
- Qualification StatusNot Qualified
- Number of Elements1
- Power Dissipation-Max25W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation25W
- Case ConnectionISOLATED
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs650m Ω @ 3.5A, 10V
- Vgs(th) (Max) @ Id4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds560pF @ 50V
- Current - Continuous Drain (Id) @ 25°C7A Tc
- Gate Charge (Qg) (Max) @ Vgs19nC @ 10V
- Rise Time12ns
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±25V
- Fall Time (Typ)10 ns
- Turn-Off Delay Time40 ns
- Continuous Drain Current (ID)7A
- JEDEC-95 CodeTO-220AB
- Gate to Source Voltage (Vgs)25V
- Drain Current-Max (Abs) (ID)7A
- Drain-source On Resistance-Max0.65Ohm
- Drain to Source Breakdown Voltage600V
- Pulsed Drain Current-Max (IDM)28A
- Avalanche Energy Rating (Eas)200 mJ
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
STF8NM60N Overview
This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 200 mJ.The maximum input capacitance of this device is 560pF @ 50V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 7A.When VGS=600V, and ID flows to VDS at 600VVDS, the drain-source breakdown voltage is 600V in this device.As shown in the table below, the drain current of this device is 7A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 40 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 28A.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.Using drive voltage (10V), this device helps reduce its power consumption.
STF8NM60N Features
the avalanche energy rating (Eas) is 200 mJ
a continuous drain current (ID) of 7A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 40 ns
based on its rated peak drain current 28A.
STF8NM60N Applications
There are a lot of STMicroelectronics
STF8NM60N applications of single MOSFETs transistors.
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 200 mJ.The maximum input capacitance of this device is 560pF @ 50V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 7A.When VGS=600V, and ID flows to VDS at 600VVDS, the drain-source breakdown voltage is 600V in this device.As shown in the table below, the drain current of this device is 7A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 40 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 28A.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.Using drive voltage (10V), this device helps reduce its power consumption.
STF8NM60N Features
the avalanche energy rating (Eas) is 200 mJ
a continuous drain current (ID) of 7A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 40 ns
based on its rated peak drain current 28A.
STF8NM60N Applications
There are a lot of STMicroelectronics
STF8NM60N applications of single MOSFETs transistors.
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
STF8NM60N More Descriptions
N-channel 600V - 0.56Ohm - 7A - TO-220 - TO-220FP - IPAK - DPAK
Trans MOSFET N-CH 600V 7A 3-Pin (3 Tab) TO-220FP Tube
Power Field-Effect Transistor, 7A I(D), 600V, 0.65ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N CH, 600V, 7A, TO-220FP; Transistor Polarity:N Channel; Continuous Drain Current Id:3.5A; On Resistance Rds(on):560mohm; Threshold Voltage Vgs Typ:3V; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:TO-220FP; SVHC:No SVHC (20-Jun-2011); Package / Case:TO-220FP; Termination Type:Through Hole; Transistor Type:Power MOSFET; Voltage Vds Typ:600V; Voltage Vgs Rds on Measurement:10V
Trans MOSFET N-CH 600V 7A 3-Pin (3 Tab) TO-220FP Tube
Power Field-Effect Transistor, 7A I(D), 600V, 0.65ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N CH, 600V, 7A, TO-220FP; Transistor Polarity:N Channel; Continuous Drain Current Id:3.5A; On Resistance Rds(on):560mohm; Threshold Voltage Vgs Typ:3V; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:TO-220FP; SVHC:No SVHC (20-Jun-2011); Package / Case:TO-220FP; Termination Type:Through Hole; Transistor Type:Power MOSFET; Voltage Vds Typ:600V; Voltage Vgs Rds on Measurement:10V
The three parts on the right have similar specifications to STF8NM60N.
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ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingSeriesJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminal FinishAdditional FeatureSubcategoryTechnologyPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Base Part NumberPin CountQualification StatusNumber of ElementsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationCase ConnectionFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)JEDEC-95 CodeGate to Source Voltage (Vgs)Drain Current-Max (Abs) (ID)Drain-source On Resistance-MaxDrain to Source Breakdown VoltagePulsed Drain Current-Max (IDM)Avalanche Energy Rating (Eas)RoHS StatusLead FreeECCN CodeVoltage - Rated DCReach Compliance CodeCurrent RatingLifecycle StatusFactory Lead TimeWeightNumber of ChannelsTurn On Delay TimeHeightLengthWidthContact PlatingRadiation HardeningView Compare
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STF8NM60NThrough HoleThrough HoleTO-220-3 Full Pack3SILICON-55°C~150°C TJTubeMDmesh™ IIe3yesObsolete1 (Unlimited)3MATTE TINAVALANCHE RATEDFET General Purpose PowerMOSFET (Metal Oxide)NOT SPECIFIEDNOT SPECIFIEDSTF8N3Not Qualified125W TcSingleENHANCEMENT MODE25WISOLATEDN-ChannelSWITCHING650m Ω @ 3.5A, 10V4V @ 250μA560pF @ 50V7A Tc19nC @ 10V12ns10V±25V10 ns40 ns7ATO-220AB25V7A0.65Ohm600V28A200 mJROHS3 CompliantLead Free---------------
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Through HoleThrough HoleTO-220-3 Full Pack3SILICON-55°C~150°C TJTubeSuperMESH™e3-Obsolete1 (Unlimited)3Tin (Sn)AVALANCHE RATEDFET General Purpose PowerMOSFET (Metal Oxide)NOT SPECIFIEDNOT SPECIFIEDSTF8N3Not Qualified135W TcSingleENHANCEMENT MODE35WISOLATEDN-ChannelSWITCHING1.4 Ω @ 3.35A, 10V4.5V @ 100μA1870pF @ 25V6.7A Tc60nC @ 10V19ns10V±30V18 ns58 ns6.7ATO-220AB30V--850V--ROHS3 CompliantLead FreeEAR99850Vnot_compliant6.7A----------
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Through HoleThrough HoleTO-220-3 Full Pack3SILICON-55°C~175°C TJTubeDeepGATE™, STripFET™ VII--Active1 (Unlimited)3-ULTRA LOW-ON RESISTANCE-MOSFET (Metal Oxide)--STF80N--130W TcSingleENHANCEMENT MODE-ISOLATEDN-ChannelSWITCHING10m Ω @ 40A, 10V4.5V @ 250μA3100pF @ 50V40A Tc45nC @ 10V13.5ns10V±20V21 ns75 ns40ATO-220AB25V--100V--ROHS3 CompliantLead FreeEAR99---ACTIVE (Last Updated: 8 months ago)13 Weeks2.240009g115 ns16.4mm10.4mm4.6mm--
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Through HoleThrough HoleTO-220-3 Full Pack3--55°C~150°C TJTubeSuperMESH5™--Active1 (Unlimited)---FET General Purpose PowerMOSFET (Metal Oxide)--STF8N---25W TcSingle---N-Channel-950m Ω @ 3A, 10V5V @ 100μA450pF @ 100V6A Tc16.5nC @ 10V14ns10V±30V20 ns32 ns6A-30V6A-800V--ROHS3 CompliantLead FreeEAR99---ACTIVE (Last Updated: 8 months ago)17 Weeks--12 ns16.4mm10.6mm4.6mmTinNo
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