STMicroelectronics STF8NM50N
- Part Number:
- STF8NM50N
- Manufacturer:
- STMicroelectronics
- Ventron No:
- 2483714-STF8NM50N
- Description:
- MOSFET N-CH 500V 5A TO-220FP
- ECAD Model:
-
- Datasheet:
- STF8NM50N
STMicroelectronics STF8NM50N technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STF8NM50N.
- Lifecycle StatusACTIVE (Last Updated: 7 months ago)
- Factory Lead Time16 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-220-3 Full Pack
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- SeriesMDmesh™ II
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Resistance790MOhm
- Terminal FinishMatte Tin (Sn) - annealed
- SubcategoryFET General Purpose Power
- TechnologyMOSFET (Metal Oxide)
- Base Part NumberSTF8N
- Pin Count3
- Number of Elements1
- Power Dissipation-Max20W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation20W
- Case ConnectionISOLATED
- Turn On Delay Time7 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs790m Ω @ 2.5A, 10V
- Vgs(th) (Max) @ Id4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds364pF @ 50V
- Current - Continuous Drain (Id) @ 25°C5A Tc
- Gate Charge (Qg) (Max) @ Vgs14nC @ 10V
- Rise Time4.4ns
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±25V
- Fall Time (Typ)8.8 ns
- Turn-Off Delay Time25 ns
- Continuous Drain Current (ID)5A
- Threshold Voltage3V
- JEDEC-95 CodeTO-220AB
- Gate to Source Voltage (Vgs)25V
- Drain Current-Max (Abs) (ID)5A
- Drain to Source Breakdown Voltage500V
- Pulsed Drain Current-Max (IDM)20A
- Height16.4mm
- Length10.4mm
- Width4.6mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
STF8NM50N Description
This STF8NM50N is an N-channel Power MOSFET developed using the second generation of MDmesh? technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charges. It is, therefore, suitable for the most demanding high-efficiency converters.
STF8NM50N Features
100% avalanche tested
Low input capacitances and gate charge
Low gate input resistance
STF8NM50N Applications
General-purpose amplifier
Switching applications
Power management
Industrial
This STF8NM50N is an N-channel Power MOSFET developed using the second generation of MDmesh? technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charges. It is, therefore, suitable for the most demanding high-efficiency converters.
STF8NM50N Features
100% avalanche tested
Low input capacitances and gate charge
Low gate input resistance
STF8NM50N Applications
General-purpose amplifier
Switching applications
Power management
Industrial
STF8NM50N More Descriptions
N-channel 500 V, 0.73 Ohm, 5 A MDmesh II Power MOSFET in TO-220FP
Trans MOSFET N-CH 500V 5A 3-Pin(3 Tab) TO-220FP Tube
MOSFET, N CH, 500V, 5A, TO 220FP; Transistor Polarity: N Channel; Continuous Drain Current Id: 5A; Drain Source Voltage Vds: 500V; On Resistance Rds(on): 0.73ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power
Power Field-Effect Transistor, 5A I(D), 500V, 0.79ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Trans MOSFET N-CH 500V 5A 3-Pin(3 Tab) TO-220FP Tube
MOSFET, N CH, 500V, 5A, TO 220FP; Transistor Polarity: N Channel; Continuous Drain Current Id: 5A; Drain Source Voltage Vds: 500V; On Resistance Rds(on): 0.73ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power
Power Field-Effect Transistor, 5A I(D), 500V, 0.79ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
The three parts on the right have similar specifications to STF8NM50N.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingSeriesJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeResistanceTerminal FinishSubcategoryTechnologyBase Part NumberPin CountNumber of ElementsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationCase ConnectionTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageJEDEC-95 CodeGate to Source Voltage (Vgs)Drain Current-Max (Abs) (ID)Drain to Source Breakdown VoltagePulsed Drain Current-Max (IDM)HeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeDrain to Source Voltage (Vdss)Drain to Source ResistanceDrain-source On Resistance-MaxAvalanche Energy Rating (Eas)WeightAdditional FeatureNumber of ChannelsView Compare
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STF8NM50NACTIVE (Last Updated: 7 months ago)16 WeeksThrough HoleThrough HoleTO-220-3 Full Pack3SILICON-55°C~150°C TJTubeMDmesh™ IIe3Active1 (Unlimited)3EAR99790MOhmMatte Tin (Sn) - annealedFET General Purpose PowerMOSFET (Metal Oxide)STF8N3120W TcSingleENHANCEMENT MODE20WISOLATED7 nsN-ChannelSWITCHING790m Ω @ 2.5A, 10V4V @ 250μA364pF @ 50V5A Tc14nC @ 10V4.4ns10V±25V8.8 ns25 ns5A3VTO-220AB25V5A500V20A16.4mm10.4mm4.6mmNo SVHCNoROHS3 CompliantLead Free-------- -
ACTIVE (Last Updated: 8 months ago)17 Weeks-Through HoleTO-220-3 Full Pack---55°C~150°C TJTubeMDmesh™ K5-Active1 (Unlimited)-----MOSFET (Metal Oxide)STF8N--130W Tc-----N-Channel--5V @ 100μA-8A Tc--10V±30V--------------RoHS Compliant-900V600mOhm-----
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-40 WeeksThrough HoleThrough HoleTO-220-3 Full Pack3SILICON150°C TJTubeFDmesh™ IIe3Active1 (Unlimited)3EAR99-Matte Tin (Sn) - annealedFET General Purpose PowerMOSFET (Metal Oxide)STF8N3125W TcSingleENHANCEMENT MODE25WISOLATED9 nsN-ChannelSWITCHING700m Ω @ 3.5A, 10V5V @ 250μA560pF @ 50V7A Tc22nC @ 10V22ns10V±30V22 ns37 ns7A-TO-220AB30V7A600V28A----NoROHS3 Compliant---0.7Ohm200 mJ---
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ACTIVE (Last Updated: 8 months ago)13 WeeksThrough HoleThrough HoleTO-220-3 Full Pack3SILICON-55°C~175°C TJTubeDeepGATE™, STripFET™ VII-Active1 (Unlimited)3EAR99---MOSFET (Metal Oxide)STF80N-130W TcSingleENHANCEMENT MODE-ISOLATED15 nsN-ChannelSWITCHING10m Ω @ 40A, 10V4.5V @ 250μA3100pF @ 50V40A Tc45nC @ 10V13.5ns10V±20V21 ns75 ns40A-TO-220AB25V-100V-16.4mm10.4mm4.6mm--ROHS3 CompliantLead Free----2.240009gULTRA LOW-ON RESISTANCE1
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