STMicroelectronics STF6N65K3

Name: STF6N65K3
Brand: STMicroelectronics
SKU: 2849546-STF6N65K3
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: STF6N65K3

Manufacturer:: STMicroelectronics

Ventron No:: 2849546-STF6N65K3

Description:: MOSFET N-CH 650V 5.4A

ECAD Model:

Datasheet:: STF6N65K3

Specifications

STMicroelectronics STF6N65K3 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STF6N65K3.

Lifecycle Status
ACTIVE (Last Updated: 7 months ago)
Factory Lead Time
12 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tube
Series
SuperMESH3™
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Resistance
1.3Ohm
Additional Feature
ULTRA LOW-ON RESISTANCE
Technology
MOSFET (Metal Oxide)
Base Part Number
STF6N
Pin Count
3
Number of Elements
1
Power Dissipation-Max
30W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
30W
Case Connection
ISOLATED
Turn On Delay Time
14 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
1.3 Ω @ 2.8A, 10V
Vgs(th) (Max) @ Id
4.5V @ 50μA
Input Capacitance (Ciss) (Max) @ Vds
880pF @ 50V
Current - Continuous Drain (Id) @ 25°C
5.4A Tc
Gate Charge (Qg) (Max) @ Vgs
35nC @ 10V
Rise Time
15ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±30V
Fall Time (Typ)
22 ns
Turn-Off Delay Time
54 ns
Continuous Drain Current (ID)
5.4A
JEDEC-95 Code
TO-220AB
Gate to Source Voltage (Vgs)
30V
Drain to Source Breakdown Voltage
650V
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

STF6N65K3 Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 880pF @ 50V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 650V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 650V.As a result of its turn-off delay time, which is 54 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 14 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 30VV.In addition to reducing power consumption, this device uses drive voltage (10V).

STF6N65K3 Features
a continuous drain current (ID) of 5.4A
a drain-to-source breakdown voltage of 650V voltage
the turn-off delay time is 54 ns

STF6N65K3 Applications
There are a lot of STMicroelectronics
STF6N65K3 applications of single MOSFETs transistors.

DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.

STF6N65K3 More Descriptions

N-channel 650 V, 1.1 Ohm typ., 5.4 A SuperMESH3(TM) Power MOSFET in TO-220FP package
Trans MOSFET N-CH 650V 5.4A 3-Pin(3 Tab) TO-220FP Tube
Power Field-Effect Transistor, 5.4A I(D), 650V, 1.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Product Comparison

The three parts on the right have similar specifications to STF6N65K3.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Series

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Resistance

Additional Feature

Technology

Base Part Number

Pin Count

Number of Elements

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Case Connection

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

JEDEC-95 Code

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Radiation Hardening

RoHS Status

Lead Free

JESD-609 Code

Pbfree Code

Terminal Finish

Subcategory

Peak Reflow Temperature (Cel)

Reach Compliance Code

Time@Peak Reflow Temperature-Max (s)

Qualification Status

Drain Current-Max (Abs) (ID)

Pulsed Drain Current-Max (IDM)

Avalanche Energy Rating (Eas)

Nominal Vgs

REACH SVHC

Weight

Number of Channels

Drain to Source Voltage (Vdss)

Threshold Voltage

Height

Length

Width

View Compare
STF6N65K3

STMicroelectronics

ACTIVE (Last Updated: 7 months ago)

12 Weeks

Through Hole

Through Hole

TO-220-3 Full Pack

3

SILICON

150°C TJ

Tube

SuperMESH3™

Active

1 (Unlimited)

3

EAR99

1.3Ohm

ULTRA LOW-ON RESISTANCE

MOSFET (Metal Oxide)

STF6N

3

1

30W Tc

Single

ENHANCEMENT MODE

30W

ISOLATED

14 ns

N-Channel

SWITCHING

1.3 Ω @ 2.8A, 10V

4.5V @ 50μA

880pF @ 50V

5.4A Tc

35nC @ 10V

15ns

10V

±30V

22 ns

54 ns

5.4A

TO-220AB

30V

650V

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
STF6NK70Z

STMicroelectronics

-

-

Through Hole

Through Hole

TO-220-3 Full Pack

3

SILICON

-55°C~150°C TJ

Tube

SuperMESH™

Obsolete

1 (Unlimited)

3

EAR99

-

AVALANCHE RATED

MOSFET (Metal Oxide)

STF6N

3

1

30W Tc

Single

ENHANCEMENT MODE

30W

ISOLATED

-

N-Channel

SWITCHING

1.8 Ω @ 2.5A, 10V

4.5V @ 100μA

930pF @ 25V

5A Tc

47nC @ 10V

18ns

10V

±30V

30 ns

45 ns

2.5A

TO-220AB

30V

700V

-

ROHS3 Compliant

-

e3

yes

Matte Tin (Sn)

FET General Purpose Power

NOT SPECIFIED

not_compliant

NOT SPECIFIED

Not Qualified

5A

20A

200 mJ

3.75 V

No SVHC

-

-

-

-

-

-

-

STF6N65K3 vs STF6NK70Z
STF6N65M2

STMicroelectronics

ACTIVE (Last Updated: 7 months ago)

16 Weeks

Through Hole

Through Hole

TO-220-3 Full Pack

3

-

-55°C~150°C TJ

Tube

MDmesh™

Active

1 (Unlimited)

-

EAR99

1.2Ohm

-

MOSFET (Metal Oxide)

STF6N

-

-

20W Tc

-

-

-

-

19 ns

N-Channel

-

1.35 Ω @ 2A, 10V

4V @ 250μA

226pF @ 100V

4A Tc

9.8nC @ 10V

7ns

10V

±25V

20 ns

6.5 ns

4A

-

25V

-

-

ROHS3 Compliant

-

-

-

-

-

NOT SPECIFIED

-

NOT SPECIFIED

-

-

-

-

-

No SVHC

329.988449mg

1

650V

3V

-

-

-

STF6N65K3 vs STF6N65M2
STF6N52K3

STMicroelectronics

-

-

Through Hole

Through Hole

TO-220-3 Full Pack

3

SILICON

-55°C~175°C TJ

Tube

SuperMESH3™

Obsolete

1 (Unlimited)

3

EAR99

-

ULTRA-LOW RESISTANCE

MOSFET (Metal Oxide)

STF6N

3

1

25W Tc

Single

ENHANCEMENT MODE

25W

ISOLATED

10 ns

N-Channel

SWITCHING

1.2 Ω @ 2.5A, 10V

4.5V @ 50μA

670pF @ 50V

5A Tc

26nC @ 10V

11ns

10V

±30V

18 ns

31 ns

5A

TO-220AB

30V

525V

No

ROHS3 Compliant

-

-

-

-

FET General Purpose Power

-

-

-

-

5A

20A

110 mJ

-

No SVHC

-

-

-

3.75V

16.4mm

10.4mm

4.6mm

STF6N65K3 vs STF6N52K3