STMicroelectronics STF6N62K3

Name: STF6N62K3
Brand: STMicroelectronics
SKU: 2479387-STF6N62K3
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: STF6N62K3

Manufacturer:: STMicroelectronics

Ventron No:: 2479387-STF6N62K3

Description:: MOSFET N-CH 620V 5.5A TO-220FP

ECAD Model:

Datasheet:: STF6N62K3

Specifications

STMicroelectronics STF6N62K3 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STF6N62K3.

Lifecycle Status
ACTIVE (Last Updated: 7 months ago)
Factory Lead Time
12 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tube
Series
SuperMESH3™
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn) - annealed
Additional Feature
ULTRA LOW-ON RESISTANCE
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Base Part Number
STF6N
Pin Count
3
Number of Elements
1
Power Dissipation-Max
30W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
90W
Case Connection
ISOLATED
Turn On Delay Time
22 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
1.28 Ω @ 2.8A, 10V
Vgs(th) (Max) @ Id
4.5V @ 50μA
Input Capacitance (Ciss) (Max) @ Vds
875pF @ 50V
Current - Continuous Drain (Id) @ 25°C
5.5A Tc
Gate Charge (Qg) (Max) @ Vgs
34nC @ 10V
Rise Time
12.5ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±30V
Fall Time (Typ)
19 ns
Turn-Off Delay Time
49 ns
Continuous Drain Current (ID)
5.5A
Threshold Voltage
3.75V
JEDEC-95 Code
TO-220AB
Gate to Source Voltage (Vgs)
30V
Drain to Source Breakdown Voltage
620V
Pulsed Drain Current-Max (IDM)
22A
Height
16.4mm
Length
10.4mm
Width
4.6mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

STF6N62K3 Description STF6N62K3 MOSFET is a type of N-Channel MOSFET. These devices boast an extremely low on-resistance, superior dynamic performance and high avalanche capability. STF6N62K3 N-Channel MOSFET is suitable for the most demanding applications. STF6N62K3 STMicroelectronics is produced using an advanced Power Trench process that has been optimized for DS, switching performance, and ruggedness. STF6N62K3 Features Improved diode reverse recovery Gate charge minimized Fast switching speed High dv/dt capability Protected of Zener STF6N62K3 Applications DC- DC Conversion DS Switching Ruggedness

STF6N62K3 More Descriptions

N-channel 620 V, 0.95 Ohm, 5.5 A SuperMESH3(TM) Power MOSFET in TO-220FP package
Trans MOSFET N-CH 620V 5.5A 3-Pin(3 Tab) TO-220FP Tube
Power Field-Effect Transistor, 5.5A I(D), 620V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N CH, 620V, 5.5A, TO 220FP; Transistor Polarity:N Channel; Continuous Drain Current Id:5.5A; Drain Source Voltage Vds:620V; On Resistance Rds(on):0.95ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3.75V; Power Dissipation Pd:30W; Transistor Case Style:TO-220FP; No. of Pins:3; SVHC:No SVHC (19-Dec-2012)

Product Comparison

The three parts on the right have similar specifications to STF6N62K3.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Series

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Additional Feature

Subcategory

Technology

Base Part Number

Pin Count

Number of Elements

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Case Connection

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

JEDEC-95 Code

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Pulsed Drain Current-Max (IDM)

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Weight

Resistance

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Number of Channels

Drain to Source Voltage (Vdss)

Drain Current-Max (Abs) (ID)

Avalanche Energy Rating (Eas)

Contact Plating

Terminal Position

Configuration

View Compare
STF6N62K3

STMicroelectronics

ACTIVE (Last Updated: 7 months ago)

12 Weeks

Through Hole

Through Hole

TO-220-3 Full Pack

3

SILICON

150°C TJ

Tube

SuperMESH3™

e3

Active

1 (Unlimited)

3

EAR99

Matte Tin (Sn) - annealed

ULTRA LOW-ON RESISTANCE

FET General Purpose Power

MOSFET (Metal Oxide)

STF6N

3

1

30W Tc

Single

ENHANCEMENT MODE

90W

ISOLATED

22 ns

N-Channel

SWITCHING

1.28 Ω @ 2.8A, 10V

4.5V @ 50μA

875pF @ 50V

5.5A Tc

34nC @ 10V

12.5ns

10V

±30V

19 ns

49 ns

5.5A

3.75V

TO-220AB

30V

620V

22A

16.4mm

10.4mm

4.6mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-
STF6N65M2

STMicroelectronics

ACTIVE (Last Updated: 7 months ago)

16 Weeks

Through Hole

Through Hole

TO-220-3 Full Pack

3

-

-55°C~150°C TJ

Tube

MDmesh™

-

Active

1 (Unlimited)

-

EAR99

-

-

-

MOSFET (Metal Oxide)

STF6N

-

-

20W Tc

-

-

-

-

19 ns

N-Channel

-

1.35 Ω @ 2A, 10V

4V @ 250μA

226pF @ 100V

4A Tc

9.8nC @ 10V

7ns

10V

±25V

20 ns

6.5 ns

4A

3V

-

25V

-

-

-

-

-

No SVHC

-

ROHS3 Compliant

-

329.988449mg

1.2Ohm

NOT SPECIFIED

NOT SPECIFIED

1

650V

-

-

-

-

-

STF6N62K3 vs STF6N65M2
STF6N52K3

STMicroelectronics

-

-

Through Hole

Through Hole

TO-220-3 Full Pack

3

SILICON

-55°C~175°C TJ

Tube

SuperMESH3™

-

Obsolete

1 (Unlimited)

3

EAR99

-

ULTRA-LOW RESISTANCE

FET General Purpose Power

MOSFET (Metal Oxide)

STF6N

3

1

25W Tc

Single

ENHANCEMENT MODE

25W

ISOLATED

10 ns

N-Channel

SWITCHING

1.2 Ω @ 2.5A, 10V

4.5V @ 50μA

670pF @ 50V

5A Tc

26nC @ 10V

11ns

10V

±30V

18 ns

31 ns

5A

3.75V

TO-220AB

30V

525V

20A

16.4mm

10.4mm

4.6mm

No SVHC

No

ROHS3 Compliant

-

-

-

-

-

-

-

5A

110 mJ

-

-

-

STF6N62K3 vs STF6N52K3
STF6N95K5

STMicroelectronics

ACTIVE (Last Updated: 7 months ago)

17 Weeks

Through Hole

Through Hole

TO-220-3 Full Pack

3

SILICON

-55°C~150°C TJ

Tube

SuperMESH5™

e3

Active

1 (Unlimited)

3

EAR99

-

-

FET General Purpose Power

MOSFET (Metal Oxide)

STF6N

3

1

25W Tc

-

ENHANCEMENT MODE

25W

ISOLATED

12 ns

N-Channel

SWITCHING

1.25 Ω @ 3A, 10V

5V @ 100μA

450pF @ 100V

9A Tc

13nC @ 10V

12ns

10V

±30V

21 ns

33 ns

9A

-

TO-220AB

30V

950V

-

-

10.4mm

-

-

No

ROHS3 Compliant

Lead Free

-

1.25Ohm

-

-

1

-

9A

90 mJ

Tin

SINGLE

SINGLE WITH BUILT-IN DIODE

STF6N62K3 vs STF6N95K5