STMicroelectronics STF42N65M5
- Part Number:
- STF42N65M5
- Manufacturer:
- STMicroelectronics
- Ventron No:
- 2481218-STF42N65M5
- Description:
- MOSFET N-CH 650V 33A TO-220FP
- Datasheet:
- STF42N65M5
STMicroelectronics STF42N65M5 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STF42N65M5.
- Factory Lead Time17 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-220-3 Full Pack
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingTube
- SeriesMDmesh™ V
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Resistance79MOhm
- Terminal FinishMatte Tin (Sn) - annealed
- SubcategoryFET General Purpose Power
- TechnologyMOSFET (Metal Oxide)
- Base Part NumberSTF42N
- Pin Count3
- Number of Elements1
- Power Dissipation-Max40W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation40W
- Case ConnectionISOLATED
- Turn On Delay Time61 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs79m Ω @ 16.5A, 10V
- Vgs(th) (Max) @ Id5V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds4650pF @ 100V
- Current - Continuous Drain (Id) @ 25°C33A Tc
- Gate Charge (Qg) (Max) @ Vgs100nC @ 10V
- Rise Time24ns
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±25V
- Fall Time (Typ)13 ns
- Turn-Off Delay Time65 ns
- Continuous Drain Current (ID)33A
- Threshold Voltage4V
- JEDEC-95 CodeTO-220AB
- Gate to Source Voltage (Vgs)25V
- Drain to Source Breakdown Voltage650V
- Avalanche Energy Rating (Eas)950 mJ
- Height9.3mm
- Length10.4mm
- Width4.6mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
STF42N65M5 Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 950 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 4650pF @ 100V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 33A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 650V, and this device has a drainage-to-source breakdown voltage of 650VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 65 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 61 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 25V to 1.In this case, the threshold voltage of the transistor is 4V, which means that it will not activate any of its functions when its threshold voltage reaches 4V.Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
STF42N65M5 Features
the avalanche energy rating (Eas) is 950 mJ
a continuous drain current (ID) of 33A
a drain-to-source breakdown voltage of 650V voltage
the turn-off delay time is 65 ns
a threshold voltage of 4V
STF42N65M5 Applications
There are a lot of STMicroelectronics
STF42N65M5 applications of single MOSFETs transistors.
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 950 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 4650pF @ 100V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 33A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 650V, and this device has a drainage-to-source breakdown voltage of 650VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 65 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 61 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 25V to 1.In this case, the threshold voltage of the transistor is 4V, which means that it will not activate any of its functions when its threshold voltage reaches 4V.Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
STF42N65M5 Features
the avalanche energy rating (Eas) is 950 mJ
a continuous drain current (ID) of 33A
a drain-to-source breakdown voltage of 650V voltage
the turn-off delay time is 65 ns
a threshold voltage of 4V
STF42N65M5 Applications
There are a lot of STMicroelectronics
STF42N65M5 applications of single MOSFETs transistors.
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
STF42N65M5 More Descriptions
N-channel 650 V, 0.070 Ohm typ., 33 A MDmesh M5 Power MOSFET in TO-220FP package
N-Channel 650 V 79 mOhm 40 W MDmesh V Power Mosfet - TO-220FP
Trans MOSFET N-CH Si 650V 33A 3-Pin(3 Tab) TO-220FP Tube
MOSFET, N CH, 650V, 33A, TO 220FP; Transistor Polarity: N Channel; Continuous Drain Current Id: 33A; Drain Source Voltage Vds: 650V; On Resistance Rds(on): 0.07ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Pow
Power Field-Effect Transistor, 33A I(D), 650V, 0.079ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
N-Channel 650 V 79 mOhm 40 W MDmesh V Power Mosfet - TO-220FP
Trans MOSFET N-CH Si 650V 33A 3-Pin(3 Tab) TO-220FP Tube
MOSFET, N CH, 650V, 33A, TO 220FP; Transistor Polarity: N Channel; Continuous Drain Current Id: 33A; Drain Source Voltage Vds: 650V; On Resistance Rds(on): 0.07ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Pow
Power Field-Effect Transistor, 33A I(D), 650V, 0.079ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
The three parts on the right have similar specifications to STF42N65M5.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingSeriesJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeResistanceTerminal FinishSubcategoryTechnologyBase Part NumberPin CountNumber of ElementsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationCase ConnectionTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageJEDEC-95 CodeGate to Source Voltage (Vgs)Drain to Source Breakdown VoltageAvalanche Energy Rating (Eas)HeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeLifecycle StatusPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Drain to Source Voltage (Vdss)Voltage - Rated DCCurrent RatingPulsed Drain Current-Max (IDM)Drain Current-Max (Abs) (ID)View Compare
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STF42N65M517 WeeksThrough HoleThrough HoleTO-220-3 Full Pack3SILICON150°C TJTubeMDmesh™ Ve3Active1 (Unlimited)3EAR9979MOhmMatte Tin (Sn) - annealedFET General Purpose PowerMOSFET (Metal Oxide)STF42N3140W TcSingleENHANCEMENT MODE40WISOLATED61 nsN-ChannelSWITCHING79m Ω @ 16.5A, 10V5V @ 250μA4650pF @ 100V33A Tc100nC @ 10V24ns10V±25V13 ns65 ns33A4VTO-220AB25V650V950 mJ9.3mm10.4mm4.6mmNo SVHCNoROHS3 CompliantLead Free---------
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17 WeeksThrough HoleThrough HoleTO-220-3 Full Pack3--55°C~150°C TJTubeMDmesh™ DM2-Active1 (Unlimited)-EAR99---MOSFET (Metal Oxide)STF43N--40W Tc-----N-Channel-93m Ω @ 17A, 10V5V @ 250μA2500pF @ 100V34A Tc56nC @ 10V-10V±25V--34A4V-------No SVHC-ROHS3 Compliant-ACTIVE (Last Updated: 8 months ago)NOT SPECIFIEDNOT SPECIFIED600V----
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12 WeeksThrough HoleThrough HoleTO-220-3 Full Pack3SILICON-55°C~175°C TJTubeSTripFET™ IIe3Active1 (Unlimited)3EAR9928MOhmMatte Tin (Sn) - annealedFET General Purpose PowerMOSFET (Metal Oxide)STF40N3130W TcSingleENHANCEMENT MODE30W-27 nsN-ChannelSWITCHING28m Ω @ 11.5A, 10V4V @ 250μA920pF @ 25V23A Tc32nC @ 10V11ns10V±20V11 ns27 ns23A-TO-220AB20V60V250 mJ----NoROHS3 CompliantLead FreeACTIVE (Last Updated: 8 months ago)---60V23A92A-
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-Through HoleThrough HoleTO-220-3 Full Pack3SILICON-55°C~150°C TJTubeSuperMESH™e3Obsolete1 (Unlimited)3EAR99-Tin (Sn)FET General Purpose PowerMOSFET (Metal Oxide)STF4N3120W TcSingleENHANCEMENT MODE20WISOLATED9.5 nsN-ChannelSWITCHING2.7 Ω @ 1.5A, 10V4.5V @ 50μA310pF @ 25V3A Tc12nC @ 10V15.5ns10V±30V22 ns23 ns3A-TO-220AB30V500V120 mJ----NoROHS3 CompliantLead Free----500V3A12A3A
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