STMicroelectronics STF17NF25
- Part Number:
- STF17NF25
- Manufacturer:
- STMicroelectronics
- Ventron No:
- 4538866-STF17NF25
- Description:
- MOSFET N-CH 250V 17A TO-220FP
- Datasheet:
- STx17NF25
STMicroelectronics STF17NF25 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STF17NF25.
- Lifecycle StatusACTIVE (Last Updated: 7 months ago)
- Factory Lead Time12 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-220-3 Full Pack
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- SeriesSTripFET™ II
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Resistance165mOhm
- Terminal FinishMatte Tin (Sn)
- SubcategoryFET General Purpose Power
- TechnologyMOSFET (Metal Oxide)
- Base Part NumberSTF17
- Pin Count3
- Number of Elements1
- Power Dissipation-Max25W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation25W
- Case ConnectionISOLATED
- Turn On Delay Time8.8 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs165m Ω @ 8.5A, 10V
- Vgs(th) (Max) @ Id4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds1000pF @ 25V
- Current - Continuous Drain (Id) @ 25°C17A Tc
- Gate Charge (Qg) (Max) @ Vgs29.5nC @ 10V
- Rise Time17.2ns
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Fall Time (Typ)8.8 ns
- Turn-Off Delay Time21 ns
- Continuous Drain Current (ID)8.5A
- JEDEC-95 CodeTO-220AB
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage250V
- Pulsed Drain Current-Max (IDM)68A
- Nominal Vgs3 V
- Height16.4mm
- Length10.4mm
- Width4.6mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
STF17NF25 Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 1000pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 8.5A amps.In this device, the drain-source breakdown voltage is 250V and VGS=250V, so the drain-source breakdown voltage is 250V in this case.It is [21 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 68A.A turn-on delay time of 8.8 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.A device like this reduces its overall power consumption when it uses drive voltage (10V).
STF17NF25 Features
a continuous drain current (ID) of 8.5A
a drain-to-source breakdown voltage of 250V voltage
the turn-off delay time is 21 ns
based on its rated peak drain current 68A.
STF17NF25 Applications
There are a lot of STMicroelectronics
STF17NF25 applications of single MOSFETs transistors.
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 1000pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 8.5A amps.In this device, the drain-source breakdown voltage is 250V and VGS=250V, so the drain-source breakdown voltage is 250V in this case.It is [21 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 68A.A turn-on delay time of 8.8 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.A device like this reduces its overall power consumption when it uses drive voltage (10V).
STF17NF25 Features
a continuous drain current (ID) of 8.5A
a drain-to-source breakdown voltage of 250V voltage
the turn-off delay time is 21 ns
based on its rated peak drain current 68A.
STF17NF25 Applications
There are a lot of STMicroelectronics
STF17NF25 applications of single MOSFETs transistors.
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
STF17NF25 More Descriptions
Transistor MOSFET N-CH 250V 17A 3-Pin (3 Tab) TO-220FP Tube
N-channel 250 V, 0.14 Ohm, 17 A, TO-220FP STripFET(TM) II Power MOSFET
N-Channel 250 V 0.165 O Low Gate Charge STripFET II Mosfet-TO-220FP
Power Field-Effect Transistor, 17A I(D), 250V, 0.165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N CH, 250V, 17A, TO-220FP; Transistor Polarity:N Channel; Continuous Drain Current Id:8.5A; Drain Source Voltage Vds:250V; On Resistance Rds(on):140mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:25W; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:TO-220FP; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:17A; Package / Case:TO-220FP; Power Dissipation Pd:25W; Termination Type:Through Hole; Transistor Type:Power MOSFET; Voltage Vds Typ:250V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V
N-channel 250 V, 0.14 Ohm, 17 A, TO-220FP STripFET(TM) II Power MOSFET
N-Channel 250 V 0.165 O Low Gate Charge STripFET II Mosfet-TO-220FP
Power Field-Effect Transistor, 17A I(D), 250V, 0.165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N CH, 250V, 17A, TO-220FP; Transistor Polarity:N Channel; Continuous Drain Current Id:8.5A; Drain Source Voltage Vds:250V; On Resistance Rds(on):140mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:25W; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:TO-220FP; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:17A; Package / Case:TO-220FP; Power Dissipation Pd:25W; Termination Type:Through Hole; Transistor Type:Power MOSFET; Voltage Vds Typ:250V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V
The three parts on the right have similar specifications to STF17NF25.
-
ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingSeriesJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeResistanceTerminal FinishSubcategoryTechnologyBase Part NumberPin CountNumber of ElementsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationCase ConnectionTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)JEDEC-95 CodeGate to Source Voltage (Vgs)Drain to Source Breakdown VoltagePulsed Drain Current-Max (IDM)Nominal VgsHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeThreshold VoltageDrain Current-Max (Abs) (ID)View Compare
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STF17NF25ACTIVE (Last Updated: 7 months ago)12 WeeksThrough HoleThrough HoleTO-220-3 Full Pack3SILICON-55°C~150°C TJTubeSTripFET™ IIe3Active1 (Unlimited)3EAR99165mOhmMatte Tin (Sn)FET General Purpose PowerMOSFET (Metal Oxide)STF173125W TcSingleENHANCEMENT MODE25WISOLATED8.8 nsN-ChannelSWITCHING165m Ω @ 8.5A, 10V4V @ 250μA1000pF @ 25V17A Tc29.5nC @ 10V17.2ns10V±20V8.8 ns21 ns8.5ATO-220AB20V250V68A3 V16.4mm10.4mm4.6mmNo SVHCNoROHS3 CompliantLead Free---
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-40 WeeksThrough HoleThrough HoleTO-220-3 Full Pack---Tube--Active1 (Unlimited)------STF12-------------------------------ROHS3 CompliantLead Free--
-
-17 WeeksThrough HoleThrough HoleTO-220-5 Full Pack3SILICON150°C TJTubeMDmesh™ Ve3Active1 (Unlimited)3EAR99430mOhmMatte Tin (Sn) - annealedFET General Purpose PowerMOSFET (Metal Oxide)STF123125W TcSingleENHANCEMENT MODE25WISOLATED22.6 nsN-ChannelSWITCHING430m Ω @ 4.3A, 10V5V @ 250μA900pF @ 100V8.5A Tc22nC @ 10V9.5ns10V±25V24 ns15.6 ns8.5ATO-220AB25V650V--16.4mm10.4mm4.6mmNo SVHCNoROHS3 CompliantLead Free4V-
-
ACTIVE (Last Updated: 8 months ago)16 WeeksThrough HoleThrough HoleTO-220-3 Full Pack3SILICON150°C TJTubeMDmesh™ IIe3Active1 (Unlimited)3EAR99470MOhmMatte Tin (Sn) - annealedFET General Purpose PowerMOSFET (Metal Oxide)STF113125W TcSingleENHANCEMENT MODE25WISOLATED8 nsN-ChannelSWITCHING470m Ω @ 4.5A, 10V4V @ 250μA547pF @ 50V8.5A Tc19nC @ 10V10ns10V±25V10 ns33 ns8.5ATO-220AB25V500V--16.4mm10.4mm4.6mmNo SVHCNoROHS3 CompliantLead Free3V9A
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