STF17NF25

STMicroelectronics STF17NF25

Part Number:
STF17NF25
Manufacturer:
STMicroelectronics
Ventron No:
4538866-STF17NF25
Description:
MOSFET N-CH 250V 17A TO-220FP
ECAD Model:
Datasheet:
STx17NF25

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Specifications
STMicroelectronics STF17NF25 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STF17NF25.
  • Lifecycle Status
    ACTIVE (Last Updated: 7 months ago)
  • Factory Lead Time
    12 Weeks
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-220-3 Full Pack
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tube
  • Series
    STripFET™ II
  • JESD-609 Code
    e3
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Resistance
    165mOhm
  • Terminal Finish
    Matte Tin (Sn)
  • Subcategory
    FET General Purpose Power
  • Technology
    MOSFET (Metal Oxide)
  • Base Part Number
    STF17
  • Pin Count
    3
  • Number of Elements
    1
  • Power Dissipation-Max
    25W Tc
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    25W
  • Case Connection
    ISOLATED
  • Turn On Delay Time
    8.8 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    165m Ω @ 8.5A, 10V
  • Vgs(th) (Max) @ Id
    4V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    1000pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    17A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    29.5nC @ 10V
  • Rise Time
    17.2ns
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    8.8 ns
  • Turn-Off Delay Time
    21 ns
  • Continuous Drain Current (ID)
    8.5A
  • JEDEC-95 Code
    TO-220AB
  • Gate to Source Voltage (Vgs)
    20V
  • Drain to Source Breakdown Voltage
    250V
  • Pulsed Drain Current-Max (IDM)
    68A
  • Nominal Vgs
    3 V
  • Height
    16.4mm
  • Length
    10.4mm
  • Width
    4.6mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
STF17NF25 Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 1000pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 8.5A amps.In this device, the drain-source breakdown voltage is 250V and VGS=250V, so the drain-source breakdown voltage is 250V in this case.It is [21 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 68A.A turn-on delay time of 8.8 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.A device like this reduces its overall power consumption when it uses drive voltage (10V).

STF17NF25 Features
a continuous drain current (ID) of 8.5A
a drain-to-source breakdown voltage of 250V voltage
the turn-off delay time is 21 ns
based on its rated peak drain current 68A.


STF17NF25 Applications
There are a lot of STMicroelectronics
STF17NF25 applications of single MOSFETs transistors.


Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
STF17NF25 More Descriptions
Transistor MOSFET N-CH 250V 17A 3-Pin (3 Tab) TO-220FP Tube
N-channel 250 V, 0.14 Ohm, 17 A, TO-220FP STripFET(TM) II Power MOSFET
N-Channel 250 V 0.165 O Low Gate Charge STripFET™ II Mosfet-TO-220FP
Power Field-Effect Transistor, 17A I(D), 250V, 0.165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N CH, 250V, 17A, TO-220FP; Transistor Polarity:N Channel; Continuous Drain Current Id:8.5A; Drain Source Voltage Vds:250V; On Resistance Rds(on):140mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:25W; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:TO-220FP; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:17A; Package / Case:TO-220FP; Power Dissipation Pd:25W; Termination Type:Through Hole; Transistor Type:Power MOSFET; Voltage Vds Typ:250V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V
Product Comparison
The three parts on the right have similar specifications to STF17NF25.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    JESD-609 Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Resistance
    Terminal Finish
    Subcategory
    Technology
    Base Part Number
    Pin Count
    Number of Elements
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Case Connection
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    JEDEC-95 Code
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Pulsed Drain Current-Max (IDM)
    Nominal Vgs
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Threshold Voltage
    Drain Current-Max (Abs) (ID)
    View Compare
  • STF17NF25
    STF17NF25
    ACTIVE (Last Updated: 7 months ago)
    12 Weeks
    Through Hole
    Through Hole
    TO-220-3 Full Pack
    3
    SILICON
    -55°C~150°C TJ
    Tube
    STripFET™ II
    e3
    Active
    1 (Unlimited)
    3
    EAR99
    165mOhm
    Matte Tin (Sn)
    FET General Purpose Power
    MOSFET (Metal Oxide)
    STF17
    3
    1
    25W Tc
    Single
    ENHANCEMENT MODE
    25W
    ISOLATED
    8.8 ns
    N-Channel
    SWITCHING
    165m Ω @ 8.5A, 10V
    4V @ 250μA
    1000pF @ 25V
    17A Tc
    29.5nC @ 10V
    17.2ns
    10V
    ±20V
    8.8 ns
    21 ns
    8.5A
    TO-220AB
    20V
    250V
    68A
    3 V
    16.4mm
    10.4mm
    4.6mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
  • STF12NM65
    -
    40 Weeks
    Through Hole
    Through Hole
    TO-220-3 Full Pack
    -
    -
    -
    Tube
    -
    -
    Active
    1 (Unlimited)
    -
    -
    -
    -
    -
    -
    STF12
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    Lead Free
    -
    -
  • STF12N65M5
    -
    17 Weeks
    Through Hole
    Through Hole
    TO-220-5 Full Pack
    3
    SILICON
    150°C TJ
    Tube
    MDmesh™ V
    e3
    Active
    1 (Unlimited)
    3
    EAR99
    430mOhm
    Matte Tin (Sn) - annealed
    FET General Purpose Power
    MOSFET (Metal Oxide)
    STF12
    3
    1
    25W Tc
    Single
    ENHANCEMENT MODE
    25W
    ISOLATED
    22.6 ns
    N-Channel
    SWITCHING
    430m Ω @ 4.3A, 10V
    5V @ 250μA
    900pF @ 100V
    8.5A Tc
    22nC @ 10V
    9.5ns
    10V
    ±25V
    24 ns
    15.6 ns
    8.5A
    TO-220AB
    25V
    650V
    -
    -
    16.4mm
    10.4mm
    4.6mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    4V
    -
  • STF11NM50N
    ACTIVE (Last Updated: 8 months ago)
    16 Weeks
    Through Hole
    Through Hole
    TO-220-3 Full Pack
    3
    SILICON
    150°C TJ
    Tube
    MDmesh™ II
    e3
    Active
    1 (Unlimited)
    3
    EAR99
    470MOhm
    Matte Tin (Sn) - annealed
    FET General Purpose Power
    MOSFET (Metal Oxide)
    STF11
    3
    1
    25W Tc
    Single
    ENHANCEMENT MODE
    25W
    ISOLATED
    8 ns
    N-Channel
    SWITCHING
    470m Ω @ 4.5A, 10V
    4V @ 250μA
    547pF @ 50V
    8.5A Tc
    19nC @ 10V
    10ns
    10V
    ±25V
    10 ns
    33 ns
    8.5A
    TO-220AB
    25V
    500V
    -
    -
    16.4mm
    10.4mm
    4.6mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    3V
    9A
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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