STMicroelectronics STF11NM50N

Name: STF11NM50N
Brand: STMicroelectronics
SKU: 2849533-STF11NM50N
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: STF11NM50N

Manufacturer:: STMicroelectronics

Ventron No:: 2849533-STF11NM50N

Description:: MOSFET N-CH 500V 8.5A TO-220FP

ECAD Model:

Datasheet:: STx11NM50N

Specifications

STMicroelectronics STF11NM50N technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STF11NM50N.

Lifecycle Status
ACTIVE (Last Updated: 8 months ago)
Factory Lead Time
16 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tube
Series
MDmesh™ II
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Resistance
470MOhm
Terminal Finish
Matte Tin (Sn) - annealed
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Base Part Number
STF11
Pin Count
3
Number of Elements
1
Power Dissipation-Max
25W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
25W
Case Connection
ISOLATED
Turn On Delay Time
8 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
470m Ω @ 4.5A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
547pF @ 50V
Current - Continuous Drain (Id) @ 25°C
8.5A Tc
Gate Charge (Qg) (Max) @ Vgs
19nC @ 10V
Rise Time
10ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±25V
Fall Time (Typ)
10 ns
Turn-Off Delay Time
33 ns
Continuous Drain Current (ID)
8.5A
Threshold Voltage
3V
JEDEC-95 Code
TO-220AB
Gate to Source Voltage (Vgs)
25V
Drain Current-Max (Abs) (ID)
9A
Drain to Source Breakdown Voltage
500V
Height
16.4mm
Length
10.4mm
Width
4.6mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

STF11NM50N Description The second generation of MDmeshTM technology was used to create the N-channel Power MOSFET STF11NM50N. This STF11NM50N Power MOSFET combines a vertical structure with the manufacturer's strip layout to produce one of the lowest on-resistance and gate charge values in the whole globe. Therefore, STF11NM50N is appropriate for high-efficiency converters that have the highest requirements.
STF11NM50N Features 100% avalanche tested
Low input capacitance and gate charge
Low gate input resistance
STF11NM50N Applications Switching applications
Power Management
Industrial

STF11NM50N More Descriptions

N-channel 500 V, 0.40 Ohm typ., 8.5 A MDmesh II Power MOSFET in a TO-220FP package
Trans MOSFET N-CH 500V 8.5A 3-Pin(3 Tab) TO-220FP Tube
N-Channel 500 V 470 mO 19 nC Flange Mount MDmesh II Power Mosfet - TO-220FP
MOSFET, N CH, 500V, 9A, TO 220FP; Transistor Polarity: N Channel; Continuous Drain Current Id: 8.5A; Drain Source Voltage Vds: 500V; On Resistance Rds(on): 0.4ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Powe
Power Field-Effect Transistor, 9A I(D), 500V, 0.47ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Product Comparison

The three parts on the right have similar specifications to STF11NM50N.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Series

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Resistance

Terminal Finish

Subcategory

Technology

Base Part Number

Pin Count

Number of Elements

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Case Connection

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

JEDEC-95 Code

Gate to Source Voltage (Vgs)

Drain Current-Max (Abs) (ID)

Drain to Source Breakdown Voltage

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Drain to Source Voltage (Vdss)

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Configuration

View Compare
STF11NM50N

STMicroelectronics

ACTIVE (Last Updated: 8 months ago)

16 Weeks

Through Hole

Through Hole

TO-220-3 Full Pack

3

SILICON

150°C TJ

Tube

MDmesh™ II

e3

Active

1 (Unlimited)

3

EAR99

470MOhm

Matte Tin (Sn) - annealed

FET General Purpose Power

MOSFET (Metal Oxide)

STF11

3

1

25W Tc

Single

ENHANCEMENT MODE

25W

ISOLATED

8 ns

N-Channel

SWITCHING

470m Ω @ 4.5A, 10V

4V @ 250μA

547pF @ 50V

8.5A Tc

19nC @ 10V

10ns

10V

±25V

10 ns

33 ns

8.5A

3V

TO-220AB

25V

9A

500V

16.4mm

10.4mm

4.6mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-
STF10NM60ND

STMicroelectronics

-

16 Weeks

Through Hole

Through Hole

TO-220-3 Full Pack

3

SILICON

-55°C~150°C TJ

Tube

FDmesh™ II

e3

Active

1 (Unlimited)

3

EAR99

550MOhm

Matte Tin (Sn) - annealed

FET General Purpose Power

MOSFET (Metal Oxide)

STF10N

3

1

25W Tc

Single

ENHANCEMENT MODE

25W

ISOLATED

9.2 ns

N-Channel

SWITCHING

550m Ω @ 4A, 10V

4V @ 250μA

540pF @ 50V

8A Tc

19nC @ 10V

10ns

10V

±25V

9.8 ns

32 ns

8A

4V

TO-220AB

25V

8A

650V

16.4mm

10.4mm

4.6mm

No SVHC

No

ROHS3 Compliant

Lead Free

600V

-

-

-

STF11NM50N vs STF10NM60ND
STF12N50M2

STMicroelectronics

ACTIVE (Last Updated: 8 months ago)

16 Weeks

Through Hole

Through Hole

TO-220-3 Full Pack

-

-

-55°C~150°C TJ

Tube

MDmesh™ II Plus

-

Active

1 (Unlimited)

-

EAR99

-

-

FET General Purpose Power

MOSFET (Metal Oxide)

STF12

-

-

85W Tc

-

-

-

-

-

N-Channel

-

380m Ω @ 5A, 10V

4V @ 250μA

560pF @ 100V

10A Tc

15nC @ 10V

-

10V

±25V

-

-

10A

-

-

-

-

-

-

-

-

-

-

ROHS3 Compliant

Lead Free

500V

NOT SPECIFIED

NOT SPECIFIED

Single

STF11NM50N vs STF12N50M2
STF12N65M5

STMicroelectronics

-

17 Weeks

Through Hole

Through Hole

TO-220-5 Full Pack

3

SILICON

150°C TJ

Tube

MDmesh™ V

e3

Active

1 (Unlimited)

3

EAR99

430mOhm

Matte Tin (Sn) - annealed

FET General Purpose Power

MOSFET (Metal Oxide)

STF12

3

1

25W Tc

Single

ENHANCEMENT MODE

25W

ISOLATED

22.6 ns

N-Channel

SWITCHING

430m Ω @ 4.3A, 10V

5V @ 250μA

900pF @ 100V

8.5A Tc

22nC @ 10V

9.5ns

10V

±25V

24 ns

15.6 ns

8.5A

4V

TO-220AB

25V

-

650V

16.4mm

10.4mm

4.6mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

STF11NM50N vs STF12N65M5