STMicroelectronics STD80N4F6

Name: STD80N4F6
Brand: STMicroelectronics
SKU: 2484232-STD80N4F6
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: STD80N4F6

Manufacturer:: STMicroelectronics

Ventron No:: 2484232-STD80N4F6

Description:: MOSFET N-CH 40V 80A DPAK

ECAD Model:

Datasheet:: STD80N4F6

Specifications

STMicroelectronics STD80N4F6 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STD80N4F6.

Lifecycle Status
ACTIVE (Last Updated: 8 months ago)
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads Tab), SC-63
Number of Pins
3
Operating Temperature
-55°C~175°C TJ
Packaging
Cut Tape (CT)
Series
Automotive, AEC-Q101, DeepGATE™, STripFET™ VI
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Resistance
6MOhm
Subcategory
FET General Purpose Powers
Technology
MOSFET (Metal Oxide)
Base Part Number
STD80
Number of Elements
1
Power Dissipation-Max
70W Tc
Element Configuration
Single
Power Dissipation
70W
Turn On Delay Time
10.5 ns
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
6m Ω @ 40A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
2150pF @ 25V
Current - Continuous Drain (Id) @ 25°C
80A Tc
Gate Charge (Qg) (Max) @ Vgs
36nC @ 10V
Rise Time
7.6ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Fall Time (Typ)
11.9 ns
Turn-Off Delay Time
46.1 ns
Continuous Drain Current (ID)
80A
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
40V
Height
2.4mm
Length
6.6mm
Width
6.2mm
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

STD80N4F6   Description
The device is an N-channel power MOSFET developed by the 6th generation STripFET "DeepGATE" technology and has a new gate structure. The resulting power MOSFET shows the lowest RDS (on) of all packages. STD80N4F6   Features
? Designed for automotive applications and AEC-Q101 qualified ? Low gate charge ? Very low on-resistance ? High avalanche ruggedness
STD80N4F6   Applications
? Switching applications

STD80N4F6 More Descriptions

Automotive-grade N-channel 40 V, 5.5 mOhm typ., 80 A, STripFET F6 Power MOSFET in DPAK package
Power Field-Effect Transistor, 80A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
Trans MOSFET N-CH 40V 80A Automotive 3-Pin(2 Tab) DPAK T/R / MOSFET N-CH 40V 80A DPAK
STD80N4F6 40 V 6 mO 36 nC -Channel STripFET Power Mosfet - TO-252 (DPAK)
MOSFET, N-CH, 40V, 80A, 175DEG C, 70W; Transistor Polarity:N Channel; Continuous Drain Current Id:80A; Source Voltage Vds:40V; On Resistance
MOSFET, N-CH, 40V, 80A, 175DEG C, 70W; Transistor Polarity: N Channel; Continuous Drain Current Id: 80A; Drain Source Voltage Vds: 40V; On Resistance Rds(on): 0.0055ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 70W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: STripFET VI DeepGATE Series; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)

Product Comparison

The three parts on the right have similar specifications to STD80N4F6.

Image

Part Number

Manufacturer

Lifecycle Status

Mount

Mounting Type

Package / Case

Number of Pins

Operating Temperature

Packaging

Series

Part Status

Moisture Sensitivity Level (MSL)

ECCN Code

Resistance

Subcategory

Technology

Base Part Number

Number of Elements

Power Dissipation-Max

Element Configuration

Power Dissipation

Turn On Delay Time

FET Type

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Height

Length

Width

Radiation Hardening

RoHS Status

Lead Free

Number of Channels

Transistor Element Material

JESD-609 Code

Pbfree Code

Number of Terminations

Terminal Finish

Additional Feature

Terminal Form

Peak Reflow Temperature (Cel)

Reach Compliance Code

Time@Peak Reflow Temperature-Max (s)

Pin Count

JESD-30 Code

Qualification Status

Operating Mode

Transistor Application

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

Pulsed Drain Current-Max (IDM)

Avalanche Energy Rating (Eas)

Termination

Dual Supply Voltage

Nominal Vgs

REACH SVHC

View Compare
STD80N4F6

STMicroelectronics

ACTIVE (Last Updated: 8 months ago)

Surface Mount

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

3

-55°C~175°C TJ

Cut Tape (CT)

Automotive, AEC-Q101, DeepGATE™, STripFET™ VI

Active

1 (Unlimited)

EAR99

6MOhm

FET General Purpose Powers

MOSFET (Metal Oxide)

STD80

1

70W Tc

Single

70W

10.5 ns

N-Channel

6m Ω @ 40A, 10V

4V @ 250μA

2150pF @ 25V

80A Tc

36nC @ 10V

7.6ns

10V

±20V

11.9 ns

46.1 ns

80A

20V

40V

2.4mm

6.6mm

6.2mm

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
STD80N6F6

STMicroelectronics

-

Surface Mount

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

3

-55°C~175°C TJ

Tape & Reel (TR)

Automotive, AEC-Q101, DeepGATE™, STripFET™ VI

Obsolete

1 (Unlimited)

EAR99

5mOhm

FET General Purpose Powers

MOSFET (Metal Oxide)

STD80

-

120W Tc

Single

120W

-

N-Channel

6.5m Ω @ 40A, 10V

4.5V @ 250μA

7480pF @ 25V

80A Tc

122nC @ 10V

-

10V

±20V

-

-

80A

20V

60V

4.6mm

10.4mm

9.35mm

No

ROHS3 Compliant

Lead Free

1

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

STD80N4F6 vs STD80N6F6
STD8NM60N

STMicroelectronics

-

Surface Mount

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

3

-55°C~150°C TJ

Tape & Reel (TR)

MDmesh™ II

Obsolete

1 (Unlimited)

EAR99

-

FET General Purpose Power

MOSFET (Metal Oxide)

STD8N

1

70W Tc

Single

70W

-

N-Channel

650m Ω @ 3.5A, 10V

4V @ 250μA

560pF @ 50V

7A Tc

19nC @ 10V

12ns

10V

±25V

10 ns

40 ns

7A

25V

600V

-

-

-

-

ROHS3 Compliant

Lead Free

-

SILICON

e3

yes

2

Matte Tin (Sn)

AVALANCHE RATED

GULL WING

260

not_compliant

30

3

R-PSSO-G2

Not Qualified

ENHANCEMENT MODE

SWITCHING

7A

0.65Ohm

28A

200 mJ

-

-

-

-

STD80N4F6 vs STD8NM60N
STD8NM60N-1

STMicroelectronics

-

Through Hole

Through Hole

TO-251-3 Short Leads, IPak, TO-251AA

3

-55°C~150°C TJ

Tube

MDmesh™ II

Obsolete

1 (Unlimited)

EAR99

-

FET General Purpose Power

MOSFET (Metal Oxide)

STD8N

1

70W Tc

Single

70W

-

N-Channel

650m Ω @ 3.5A, 10V

4V @ 250μA

560pF @ 50V

7A Tc

19nC @ 10V

12ns

10V

±25V

10 ns

40 ns

3.5A

25V

600V

-

-

-

-

ROHS3 Compliant

-

-

SILICON

e3

yes

3

Matte Tin (Sn)

AVALANCHE RATED

-

260

not_compliant

30

3

-

Not Qualified

ENHANCEMENT MODE

SWITCHING

7A

0.65Ohm

28A

200 mJ

Through Hole

600V

3 V

No SVHC

STD80N4F6 vs STD8NM60N-1