STMicroelectronics STD70NS04ZL
- Part Number:
- STD70NS04ZL
- Manufacturer:
- STMicroelectronics
- Ventron No:
- 2484699-STD70NS04ZL
- Description:
- MOSFET N-CH 33V 70A DPAK
- Datasheet:
- STD70NS04ZL
STMicroelectronics STD70NS04ZL technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STD70NS04ZL.
- Lifecycle StatusACTIVE (Last Updated: 7 months ago)
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-252-3, DPak (2 Leads Tab), SC-63
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~175°C TJ
- PackagingTape & Reel (TR)
- SeriesSAFeFET™
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations2
- ECCN CodeEAR99
- Resistance10.5MOhm
- Terminal FinishMatte Tin (Sn) - annealed
- SubcategoryFET General Purpose Power
- TechnologyMOSFET (Metal Oxide)
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Base Part NumberSTD70N
- Pin Count3
- JESD-30 CodeR-PSSO-G2
- Number of Elements1
- Power Dissipation-Max110W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation110W
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs10.5m Ω @ 30A, 10V
- Vgs(th) (Max) @ Id3V @ 1mA
- Input Capacitance (Ciss) (Max) @ Vds1800pF @ 25V
- Current - Continuous Drain (Id) @ 25°C70A Tc
- Gate Charge (Qg) (Max) @ Vgs32nC @ 5V
- Rise Time70ns
- Drive Voltage (Max Rds On,Min Rds On)5V 10V
- Vgs (Max)±20V
- Fall Time (Typ)95 ns
- Continuous Drain Current (ID)70A
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage33V
- Pulsed Drain Current-Max (IDM)280A
- Avalanche Energy Rating (Eas)650 mJ
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
STD70NS04ZL Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 650 mJ.A device's maximum input capacitance is 1800pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 70A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=33V, and this device has a drain-to-source breakdown voltage of 33V voltage.Its maximum pulsed drain current is 280A, which is also its maximum rating peak drainage current.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.This device uses no drive voltage (5V 10V) to reduce its overall power consumption.
STD70NS04ZL Features
the avalanche energy rating (Eas) is 650 mJ
a continuous drain current (ID) of 70A
a drain-to-source breakdown voltage of 33V voltage
based on its rated peak drain current 280A.
STD70NS04ZL Applications
There are a lot of STMicroelectronics
STD70NS04ZL applications of single MOSFETs transistors.
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 650 mJ.A device's maximum input capacitance is 1800pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 70A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=33V, and this device has a drain-to-source breakdown voltage of 33V voltage.Its maximum pulsed drain current is 280A, which is also its maximum rating peak drainage current.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.This device uses no drive voltage (5V 10V) to reduce its overall power consumption.
STD70NS04ZL Features
the avalanche energy rating (Eas) is 650 mJ
a continuous drain current (ID) of 70A
a drain-to-source breakdown voltage of 33V voltage
based on its rated peak drain current 280A.
STD70NS04ZL Applications
There are a lot of STMicroelectronics
STD70NS04ZL applications of single MOSFETs transistors.
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters
STD70NS04ZL More Descriptions
N-Channel 33 V 10.5 mOhm Surface Mount SAFeFET Power MOSFET - TO-252-3
N-channel 33 V clamped, 9.5 mOhm typ., 70 A fully protected SAFeFET Power MOSFET in a DPAK package
Power Field-Effect Transistor, 70A I(D), 33V, 0.0125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
N-channel 33 V clamped, 9.5 mOhm typ., 70 A fully protected SAFeFET Power MOSFET in a DPAK package
Power Field-Effect Transistor, 70A I(D), 33V, 0.0125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
The three parts on the right have similar specifications to STD70NS04ZL.
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ImagePart NumberManufacturerLifecycle StatusMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingSeriesJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeResistanceTerminal FinishSubcategoryTechnologyTerminal FormPeak Reflow Temperature (Cel)Base Part NumberPin CountJESD-30 CodeNumber of ElementsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Continuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain to Source Breakdown VoltagePulsed Drain Current-Max (IDM)Avalanche Energy Rating (Eas)Radiation HardeningRoHS StatusLead FreeAdditional FeatureTime@Peak Reflow Temperature-Max (s)Qualification StatusCase ConnectionTurn-Off Delay TimeReach Compliance CodeDrain Current-Max (Abs) (ID)Nominal VgsREACH SVHCDrain-source On Resistance-MaxView Compare
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STD70NS04ZLACTIVE (Last Updated: 7 months ago)Surface MountSurface MountTO-252-3, DPak (2 Leads Tab), SC-633SILICON-55°C~175°C TJTape & Reel (TR)SAFeFET™e3Active1 (Unlimited)2EAR9910.5MOhmMatte Tin (Sn) - annealedFET General Purpose PowerMOSFET (Metal Oxide)GULL WING260STD70N3R-PSSO-G21110W TcSingleENHANCEMENT MODE110WN-ChannelSWITCHING10.5m Ω @ 30A, 10V3V @ 1mA1800pF @ 25V70A Tc32nC @ 5V70ns5V 10V±20V95 ns70A20V33V280A650 mJNoROHS3 CompliantLead Free-----------
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-Through HoleThrough HoleTO-251-3 Short Leads, IPak, TO-251AA-SILICON-55°C~175°C TJTubeSTripFET™ IIIe3Obsolete3 (168 Hours)3EAR995.9mOhmTINFET General Purpose PowerMOSFET (Metal Oxide)-NOT SPECIFIEDSTD70N3R-PSIP-T3170W TcSingleENHANCEMENT MODE70WN-ChannelSWITCHING7.3m Ω @ 35A, 10V1V @ 250μA2200pF @ 25V70A Tc21nC @ 5V95ns5V 10V±20V15 ns70A20V30V280A300 mJ-ROHS3 Compliant-LOW THRESHOLDNOT SPECIFIEDNot QualifiedDRAIN19 ns-----
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-Surface MountSurface MountTO-252-3, DPak (2 Leads Tab), SC-633SILICON-55°C~150°C TJTape & Reel (TR)MDmesh™ IIe3Obsolete1 (Unlimited)2EAR99780mOhmMatte Tin (Sn)FET General Purpose PowerMOSFET (Metal Oxide)GULL WING260STD73R-PSSO-G2145W TcSingleENHANCEMENT MODE45WN-ChannelSWITCHING780m Ω @ 2.5A, 10V4V @ 250μA400pF @ 50V5A Tc12nC @ 10V5ns10V±25V9 ns2.5A25V500V20A100 mJ-ROHS3 CompliantLead Free-30Not Qualified-40 nsnot_compliant5A3 VNo SVHC-
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-Through HoleThrough HoleTO-251-3 Short Leads, IPak, TO-251AA-SILICON-55°C~150°C TJTubeMDmesh™ II-Obsolete1 (Unlimited)3---FET General Purpose PowerMOSFET (Metal Oxide)-NOT SPECIFIEDSTD73R-PSIP-T3145W TcSingleENHANCEMENT MODE45WN-ChannelSWITCHING780m Ω @ 2.5A, 10V4V @ 250μA400pF @ 50V5A Tc12nC @ 10V5ns10V±25V9 ns5A25V500V20A100 mJ-ROHS3 Compliant--NOT SPECIFIEDNot Qualified-40 nsunknown5A--0.78Ohm
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