STMicroelectronics STD7NS20T4

Name: STD7NS20T4
Brand: STMicroelectronics
SKU: 2851240-STD7NS20T4
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: STD7NS20T4

Manufacturer:: STMicroelectronics

Ventron No:: 2851240-STD7NS20T4

Description:: MOSFET N-CH 200V 7A DPAK

ECAD Model:

Datasheet:: STD7NS20(-1)

Specifications

STMicroelectronics STD7NS20T4 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STD7NS20T4.

Lifecycle Status
ACTIVE (Last Updated: 8 months ago)
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads Tab), SC-63
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Series
MESH OVERLAY™
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Resistance
400mOhm
Terminal Finish
Matte Tin (Sn) - annealed
Subcategory
FET General Purpose Power
Voltage - Rated DC
200V
Technology
MOSFET (Metal Oxide)
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
7A
Time@Peak Reflow Temperature-Max (s)
30
Base Part Number
STD7
Pin Count
3
JESD-30 Code
R-PSSO-G2
Number of Elements
1
Power Dissipation-Max
45W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
45W
Case Connection
DRAIN
Turn On Delay Time
10 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
400m Ω @ 3.5A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
540pF @ 25V
Current - Continuous Drain (Id) @ 25°C
7A Tc
Gate Charge (Qg) (Max) @ Vgs
45nC @ 10V
Rise Time
15ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Fall Time (Typ)
12 ns
Continuous Drain Current (ID)
7A
Threshold Voltage
3V
JEDEC-95 Code
TO-252AA
Gate to Source Voltage (Vgs)
20V
Drain Current-Max (Abs) (ID)
7A
Drain to Source Breakdown Voltage
200V
Pulsed Drain Current-Max (IDM)
28A
Avalanche Energy Rating (Eas)
60 mJ
Height
2.4mm
Length
6.6mm
Width
6.2mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

STD7NS20T4 Description
STMicroelectronics has developed an innovative series of power MOSFETs with remarkable performance using the newest high voltage MESH OVERLAYTM technology. The Company's exclusive edge termination structure, combined with the new patented STrip pattern, makes it appropriate for converters for lighting applications.

STD7NS20T4 Features
TYPICAL RDS(on) = 0.35 ?
EXTREMELY HIGH dv/dt CAPABILITY
100% AVALANCHE TESTED
VERY LOW INTRINSIC CAPACITANCES
ADD SUFFIX “T4” FOR ORDERING IN TAPE & REEL

STD7NS20T4 Applications
HIGH CURRENT, HIGH-SPEED SWITCHING
SWITCH-MODE POWER SUPPLIES (SMPS)
DC-DC CONVERTERS FOR TELECOM, INDUSTRIAL, AND LIGHTING EQUIPMENT

STD7NS20T4 More Descriptions

N-channel 200 V, 0.35 Ohm typ., 7 A Power MOSFET in DPAK package
N-Channel 200 V 0.4 Ohm 45 W Surface Mount MESH Overlay Power Mosfet - TO-252
Power Field-Effect Transistor, 7A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
MOSFET, N CH, 200V, 7A, DPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:7A; Drain Source Voltage Vds:200V; On Resistance Rds(on):0.35ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:45W; Transistor Case Style:TO-252; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)

Product Comparison

The three parts on the right have similar specifications to STD7NS20T4.

Image

Part Number

Manufacturer

Lifecycle Status

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Series

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Resistance

Terminal Finish

Subcategory

Voltage - Rated DC

Technology

Terminal Form

Peak Reflow Temperature (Cel)

Current Rating

Time@Peak Reflow Temperature-Max (s)

Base Part Number

Pin Count

JESD-30 Code

Number of Elements

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Case Connection

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Continuous Drain Current (ID)

Threshold Voltage

JEDEC-95 Code

Gate to Source Voltage (Vgs)

Drain Current-Max (Abs) (ID)

Drain to Source Breakdown Voltage

Pulsed Drain Current-Max (IDM)

Avalanche Energy Rating (Eas)

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Additional Feature

Reach Compliance Code

Qualification Status

Turn-Off Delay Time

Factory Lead Time

Drain to Source Voltage (Vdss)

DS Breakdown Voltage-Min

Nominal Vgs

View Compare
STD7NS20T4

STMicroelectronics

ACTIVE (Last Updated: 8 months ago)

Surface Mount

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

3

SILICON

150°C TJ

Tape & Reel (TR)

MESH OVERLAY™

e3

Active

1 (Unlimited)

2

EAR99

400mOhm

Matte Tin (Sn) - annealed

FET General Purpose Power

200V

MOSFET (Metal Oxide)

GULL WING

260

7A

30

STD7

3

R-PSSO-G2

1

45W Tc

Single

ENHANCEMENT MODE

45W

DRAIN

10 ns

N-Channel

SWITCHING

400m Ω @ 3.5A, 10V

4V @ 250μA

540pF @ 25V

7A Tc

45nC @ 10V

15ns

10V

±20V

12 ns

7A

3V

TO-252AA

20V

7A

200V

28A

60 mJ

2.4mm

6.6mm

6.2mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-
STD70N03L

STMicroelectronics

-

Surface Mount

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

3

SILICON

-55°C~175°C TJ

Tape & Reel (TR)

STripFET™ III

e3

Obsolete

1 (Unlimited)

2

EAR99

-

Matte Tin (Sn)

FET General Purpose Power

-

MOSFET (Metal Oxide)

GULL WING

260

-

30

STD70N

3

R-PSSO-G2

1

70W Tc

Single

ENHANCEMENT MODE

70W

DRAIN

-

N-Channel

SWITCHING

7.3m Ω @ 35A, 10V

1V @ 250μA

2200pF @ 25V

70A Tc

21nC @ 5V

95ns

5V 10V

±20V

15 ns

70A

-

-

20V

-

30V

280A

-

-

-

-

-

-

ROHS3 Compliant

-

LOW THRESHOLD

not_compliant

Not Qualified

19 ns

-

-

-

-

STD7NS20T4 vs STD70N03L
STD7N80K5

STMicroelectronics

ACTIVE (Last Updated: 7 months ago)

Surface Mount

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

3

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

SuperMESH5™

-

Active

1 (Unlimited)

2

EAR99

1.2Ohm

-

FET General Purpose Power

-

MOSFET (Metal Oxide)

GULL WING

-

-

-

STD7

-

R-PSSO-G2

1

110W Tc

Single

ENHANCEMENT MODE

110W

DRAIN

11.3 ns

N-Channel

SWITCHING

1.2 Ω @ 3A, 10V

5V @ 100μA

360pF @ 100V

6A Tc

13.4nC @ 10V

8.3ns

10V

±30V

20.2 ns

6A

-

-

30V

6A

-

24A

88 mJ

2.4mm

6.6mm

6.2mm

-

No

ROHS3 Compliant

Lead Free

-

-

-

23.7 ns

17 Weeks

800V

800V

-

STD7NS20T4 vs STD7N80K5
STD7NM50N

STMicroelectronics

-

Surface Mount

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

3

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

MDmesh™ II

e3

Obsolete

1 (Unlimited)

2

EAR99

780mOhm

Matte Tin (Sn)

FET General Purpose Power

-

MOSFET (Metal Oxide)

GULL WING

260

-

30

STD7

3

R-PSSO-G2

1

45W Tc

Single

ENHANCEMENT MODE

45W

-

-

N-Channel

SWITCHING

780m Ω @ 2.5A, 10V

4V @ 250μA

400pF @ 50V

5A Tc

12nC @ 10V

5ns

10V

±25V

9 ns

2.5A

-

-

25V

5A

500V

20A

100 mJ

-

-

-

No SVHC

-

ROHS3 Compliant

Lead Free

-

not_compliant

Not Qualified

40 ns

-

-

-

3 V

STD7NS20T4 vs STD7NM50N