STD60NF06T4

STMicroelectronics STD60NF06T4

Part Number:
STD60NF06T4
Manufacturer:
STMicroelectronics
Ventron No:
2478203-STD60NF06T4
Description:
MOSFET N-CH 60V 60A DPAK
ECAD Model:
Datasheet:
STD60NF06T4

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  • STD60NF06T4 Detail Images
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Specifications
STMicroelectronics STD60NF06T4 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STD60NF06T4.
  • Lifecycle Status
    ACTIVE (Last Updated: 8 months ago)
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-252-3, DPak (2 Leads Tab), SC-63
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~175°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    STripFET™ II
  • JESD-609 Code
    e3
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    2
  • ECCN Code
    EAR99
  • Resistance
    16mOhm
  • Terminal Finish
    Tin (Sn)
  • Subcategory
    FET General Purpose Power
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Time@Peak Reflow Temperature-Max (s)
    30
  • Base Part Number
    STD60N
  • Pin Count
    3
  • JESD-30 Code
    R-PSSO-G2
  • Number of Elements
    1
  • Power Dissipation-Max
    110W Tc
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    110W
  • Case Connection
    DRAIN
  • Turn On Delay Time
    16 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    16m Ω @ 30A, 10V
  • Vgs(th) (Max) @ Id
    4V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    1810pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    60A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    66nC @ 10V
  • Rise Time
    108ns
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    20 ns
  • Turn-Off Delay Time
    43 ns
  • Continuous Drain Current (ID)
    60A
  • Threshold Voltage
    4V
  • JEDEC-95 Code
    TO-252AA
  • Gate to Source Voltage (Vgs)
    20V
  • Drain to Source Breakdown Voltage
    60V
  • Pulsed Drain Current-Max (IDM)
    240A
  • Dual Supply Voltage
    60V
  • Nominal Vgs
    4 V
  • Height
    2.4mm
  • Length
    6.6mm
  • Width
    6.2mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
STD60NF06T4 Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 1810pF @ 25V.This device conducts a continuous drain current (ID) of 60A, which is the maximum continuous current transistor can conduct.Using VGS=60V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 60V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 43 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 240A.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 16 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.Activation of any electrical operation happens at threshold voltage, and this transistor has 4V threshold voltage.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).

STD60NF06T4 Features
a continuous drain current (ID) of 60A
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 43 ns
based on its rated peak drain current 240A.
a threshold voltage of 4V


STD60NF06T4 Applications
There are a lot of STMicroelectronics
STD60NF06T4 applications of single MOSFETs transistors.


Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
STD60NF06T4 More Descriptions
Mosfet Transistor, N Channel, 60 A, 60 V, 14 Mohm, 10 V, 4 V |Stmicroelectronics STD60NF06T4
N-CHANNEL 60 V - 0.014 OHM - 60 A DPAK STripFET II MOSFET
MOSFET, N, D-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:60A; Source Voltage Vds:60V; On Resistance Rds(on):0.014ohm;
Power Field-Effect Transistor, 60A I(D), 60V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
MOSFET, N, D-PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 60A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.014ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 110W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (17-Dec-2015); Alternate Case Style: D-PAK; Current Id Max: 60A; External Depth: 10.5mm; External Length / Height: 2.55mm; External Width: 6.8mm; No. of Transistors: 1; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 175°C; Pulse Current Idm: 240A; Voltage Vds Typ: 60V; Voltage Vgs Max: 20V; Voltage Vgs Rds on Measurement: 10V
STD60NF06T4 Detail Images
Product Comparison
The three parts on the right have similar specifications to STD60NF06T4.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    JESD-609 Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Resistance
    Terminal Finish
    Subcategory
    Technology
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Base Part Number
    Pin Count
    JESD-30 Code
    Number of Elements
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Case Connection
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    JEDEC-95 Code
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Pulsed Drain Current-Max (IDM)
    Dual Supply Voltage
    Nominal Vgs
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Additional Feature
    Voltage - Rated DC
    Current Rating
    Qualification Status
    Drain-source On Resistance-Max
    Avalanche Energy Rating (Eas)
    Factory Lead Time
    Manufacturer Package Identifier
    Number of Channels
    Max Junction Temperature (Tj)
    Weight
    View Compare
  • STD60NF06T4
    STD60NF06T4
    ACTIVE (Last Updated: 8 months ago)
    Surface Mount
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    3
    SILICON
    -55°C~175°C TJ
    Tape & Reel (TR)
    STripFET™ II
    e3
    Active
    1 (Unlimited)
    2
    EAR99
    16mOhm
    Tin (Sn)
    FET General Purpose Power
    MOSFET (Metal Oxide)
    GULL WING
    260
    30
    STD60N
    3
    R-PSSO-G2
    1
    110W Tc
    Single
    ENHANCEMENT MODE
    110W
    DRAIN
    16 ns
    N-Channel
    SWITCHING
    16m Ω @ 30A, 10V
    4V @ 250μA
    1810pF @ 25V
    60A Tc
    66nC @ 10V
    108ns
    10V
    ±20V
    20 ns
    43 ns
    60A
    4V
    TO-252AA
    20V
    60V
    240A
    60V
    4 V
    2.4mm
    6.6mm
    6.2mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • STD60NH03L-1
    -
    Through Hole
    Through Hole
    TO-251-3 Short Leads, IPak, TO-251AA
    -
    SILICON
    -55°C~175°C TJ
    Tube
    STripFET™ III
    -
    Obsolete
    1 (Unlimited)
    3
    EAR99
    -
    -
    FET General Purpose Power
    MOSFET (Metal Oxide)
    -
    260
    NOT SPECIFIED
    STD60N
    3
    R-PSIP-T3
    1
    70W Tc
    Single
    ENHANCEMENT MODE
    70W
    DRAIN
    -
    N-Channel
    SWITCHING
    9m Ω @ 30A, 10V
    1V @ 250μA
    2200pF @ 25V
    60A Tc
    21nC @ 5V
    95ns
    5V 10V
    ±20V
    15 ns
    19 ns
    60A
    -
    -
    20V
    30V
    240A
    -
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    Lead Free
    LOW THRESHOLD
    30V
    60A
    Not Qualified
    0.017Ohm
    300 mJ
    -
    -
    -
    -
    -
  • STD6N80K5
    ACTIVE (Last Updated: 8 months ago)
    Surface Mount
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    3
    -
    -55°C~150°C TJ
    Cut Tape (CT)
    SuperMESH5™
    -
    Active
    1 (Unlimited)
    -
    EAR99
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    NOT SPECIFIED
    NOT SPECIFIED
    STD6N
    -
    -
    -
    85W Tc
    -
    -
    85W
    -
    16 ns
    N-Channel
    -
    1.6 Ω @ 2A, 10V
    5V @ 100μA
    255pF @ 100V
    4.5A Tc
    7.5nC @ 10V
    -
    10V
    30V
    -
    28.5 ns
    4.5A
    3V
    -
    30V
    800V
    -
    -
    -
    2.52mm
    -
    -
    -
    -
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    17 Weeks
    DPAK-0068772_type-E
    1
    150°C
    -
  • STD6N65M2
    -
    Surface Mount
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    3
    -
    -55°C~150°C TJ
    Cut Tape (CT)
    MDmesh™
    -
    Active
    1 (Unlimited)
    -
    EAR99
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    NOT SPECIFIED
    NOT SPECIFIED
    STD6N
    -
    -
    -
    60W Tc
    -
    -
    -
    -
    19 ns
    N-Channel
    -
    1.35 Ω @ 2A, 10V
    4V @ 250μA
    226pF @ 100V
    4A Tc
    9.8nC @ 10V
    7ns
    10V
    ±25V
    20 ns
    6.5 ns
    4A
    3V
    -
    25V
    650V
    -
    -
    -
    -
    -
    -
    No SVHC
    -
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    16 Weeks
    -
    1
    -
    3.949996g
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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