STD5NK40ZT4

STMicroelectronics STD5NK40ZT4

Part Number:
STD5NK40ZT4
Manufacturer:
STMicroelectronics
Ventron No:
2484112-STD5NK40ZT4
Description:
MOSFET N-CH 400V 3A DPAK
ECAD Model:
Datasheet:
ST(D,P)5NK40Z(FP,-1)

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Specifications
STMicroelectronics STD5NK40ZT4 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STD5NK40ZT4.
  • Lifecycle Status
    ACTIVE (Last Updated: 8 months ago)
  • Factory Lead Time
    12 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-252-3, DPak (2 Leads Tab), SC-63
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    SuperMESH™
  • JESD-609 Code
    e3
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    2
  • ECCN Code
    EAR99
  • Resistance
    1.8Ohm
  • Terminal Finish
    Matte Tin (Sn)
  • Subcategory
    FET General Purpose Power
  • Voltage - Rated DC
    400V
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Current Rating
    3A
  • Time@Peak Reflow Temperature-Max (s)
    30
  • Base Part Number
    STD5N
  • Pin Count
    3
  • JESD-30 Code
    R-PSSO-G2
  • Number of Elements
    1
  • Power Dissipation-Max
    45W Tc
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    45W
  • Turn On Delay Time
    9.2 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    1.8 Ω @ 1.5A, 10V
  • Vgs(th) (Max) @ Id
    4.5V @ 50μA
  • Input Capacitance (Ciss) (Max) @ Vds
    305pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    3A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    17nC @ 10V
  • Rise Time
    6ns
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±30V
  • Fall Time (Typ)
    11 ns
  • Turn-Off Delay Time
    22.5 ns
  • Continuous Drain Current (ID)
    3A
  • Threshold Voltage
    3.75V
  • Gate to Source Voltage (Vgs)
    30V
  • Drain Current-Max (Abs) (ID)
    3A
  • Drain to Source Breakdown Voltage
    400V
  • Height
    2.4mm
  • Length
    6.6mm
  • Width
    6.2mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
STD5NK40ZT4 Description

The STD5NK40ZT4 high-voltage devices are Zener-protected N-channel Power MOSFETs developed by STMicroelectronics using the SuperMESHTM technology, which is an improvement on the well-known PowerMESHTM. STD5NK40ZT4 are designed to ensure a high level of dv/dt capability for the most demanding applications, in addition to a significant reduction in on-resistance.

STD5NK40ZT4 Features

100% avalanche tested
Gate charge minimized
Very low intrinsic capacitance
Zener-protected

STD5NK40ZT4 Applications

High current, high speed switching
Ideal for off-line power supplies,adaptors and pfc
Lighting
STD5NK40ZT4 More Descriptions
N-CHANNEL 400V - 1.47 OHM - 3A TO-220/TO-220FP/DPAK/IPAK ZENER-PROTECTED SUPERMESH POWER MOSFET
N-Channel 400 V 1.8 Ohm Surface Mount SuperMESH Power MosFet - TO-252-3
Mosfet Transistor, N Channel, 3 A, 400 V, 1.47 Ohm, 10 V, 3.75 V |Stmicroelectronics STD5NK40ZT4
N-channel 400 V, 1.45 Ohm typ., 3 A SuperMESH Power MOSFET in DPAK packageCiiva Crawler
MOSFET, N, D-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:3A; Source Voltage Vds:400V; On Resistance Rds(on):1.47ohm;
Power Field-Effect Transistor, 3A I(D), 400V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
MOSFET, N, D-PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 3A; Drain Source Voltage Vds: 400V; On Resistance Rds(on): 1.47ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.75V; Power Dissipation Pd: 45W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (17-Dec-2015); Current Id Max: 3A; On State resistance @ Vgs = 10V: 1.8ohm; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C; Pulse Current Idm: 12A; Termination Type: Surface Mount Device; Voltage Vds: 400V; Voltage Vds Typ: 400V; Voltage Vgs Max: 3.75V; Voltage Vgs Rds on Measurement: 10V; Voltage Vgs th Max: 4.5V; Voltage Vgs th Min: 3V
Product Comparison
The three parts on the right have similar specifications to STD5NK40ZT4.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    JESD-609 Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Resistance
    Terminal Finish
    Subcategory
    Voltage - Rated DC
    Technology
    Terminal Form
    Peak Reflow Temperature (Cel)
    Current Rating
    Time@Peak Reflow Temperature-Max (s)
    Base Part Number
    Pin Count
    JESD-30 Code
    Number of Elements
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    Gate to Source Voltage (Vgs)
    Drain Current-Max (Abs) (ID)
    Drain to Source Breakdown Voltage
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Weight
    Additional Feature
    JEDEC-95 Code
    Nominal Vgs
    Pbfree Code
    View Compare
  • STD5NK40ZT4
    STD5NK40ZT4
    ACTIVE (Last Updated: 8 months ago)
    12 Weeks
    Surface Mount
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    3
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    SuperMESH™
    e3
    Active
    1 (Unlimited)
    2
    EAR99
    1.8Ohm
    Matte Tin (Sn)
    FET General Purpose Power
    400V
    MOSFET (Metal Oxide)
    GULL WING
    260
    3A
    30
    STD5N
    3
    R-PSSO-G2
    1
    45W Tc
    Single
    ENHANCEMENT MODE
    45W
    9.2 ns
    N-Channel
    SWITCHING
    1.8 Ω @ 1.5A, 10V
    4.5V @ 50μA
    305pF @ 25V
    3A Tc
    17nC @ 10V
    6ns
    10V
    ±30V
    11 ns
    22.5 ns
    3A
    3.75V
    30V
    3A
    400V
    2.4mm
    6.6mm
    6.2mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
  • STD5NM50T4
    -
    -
    Surface Mount
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    3
    SILICON
    -55°C~150°C TJ
    Cut Tape (CT)
    MDmesh™
    e3
    Active
    1 (Unlimited)
    2
    EAR99
    800mOhm
    Matte Tin (Sn)
    FET General Purpose Power
    500V
    MOSFET (Metal Oxide)
    GULL WING
    260
    7.5A
    30
    STD5N
    3
    R-PSSO-G2
    1
    100W Tc
    Single
    ENHANCEMENT MODE
    100W
    16 ns
    N-Channel
    SWITCHING
    800m Ω @ 2.5A, 10V
    5V @ 250μA
    415pF @ 25V
    7.5A Tc
    13nC @ 10V
    8ns
    10V
    ±30V
    6 ns
    -
    7.5A
    4V
    30V
    5A
    500V
    2.4mm
    6.6mm
    6.2mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    4.535924g
    AVALANCHE RATED
    TO-252AA
    -
    -
  • STD5N52U
    ACTIVE (Last Updated: 7 months ago)
    12 Weeks
    Surface Mount
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    3
    SILICON
    -55°C~150°C TJ
    Cut Tape (CT)
    UltraFASTmesh™
    e3
    Active
    1 (Unlimited)
    2
    EAR99
    1.28Ohm
    Matte Tin (Sn) - annealed
    FET General Purpose Power
    -
    MOSFET (Metal Oxide)
    GULL WING
    260
    -
    -
    STD5N
    3
    R-PSSO-G2
    1
    70W Tc
    Single
    ENHANCEMENT MODE
    70W
    11.4 ns
    N-Channel
    SWITCHING
    1.5 Ω @ 2.2A, 10V
    4.5V @ 50μA
    529pF @ 25V
    4.4A Tc
    16.9nC @ 10V
    13.6ns
    10V
    ±30V
    15 ns
    23.1 ns
    4.4A
    3.75V
    30V
    -
    525V
    -
    -
    -
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    3.75 V
    -
  • STD5NK50Z-1
    -
    -
    Through Hole
    Through Hole
    TO-251-3 Short Leads, IPak, TO-251AA
    3
    SILICON
    -55°C~150°C TJ
    Tube
    SuperMESH™
    e3
    Obsolete
    1 (Unlimited)
    3
    EAR99
    -
    Matte Tin (Sn) - annealed
    FET General Purpose Power
    -
    MOSFET (Metal Oxide)
    -
    260
    -
    30
    STD5N
    3
    -
    1
    70W Tc
    Single
    ENHANCEMENT MODE
    70W
    15 ns
    N-Channel
    SWITCHING
    1.5 Ω @ 2.2A, 10V
    4.5V @ 50μA
    535pF @ 25V
    4.4A Tc
    28nC @ 10V
    10ns
    10V
    ±30V
    15 ns
    32 ns
    2.2A
    3.75V
    30V
    4.4A
    500V
    6.2mm
    6.6mm
    2.4mm
    No SVHC
    No
    ROHS3 Compliant
    -
    -
    -
    -
    -
    yes
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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