STMicroelectronics STD50NH02LT4
- Part Number:
- STD50NH02LT4
- Manufacturer:
- STMicroelectronics
- Ventron No:
- 2488528-STD50NH02LT4
- Description:
- MOSFET N-CH 24V 50A DPAK
- Datasheet:
- STD50NH02LT4
STMicroelectronics STD50NH02LT4 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STD50NH02LT4.
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-252-3, DPak (2 Leads Tab), SC-63
- Number of Pins3
- Operating Temperature-55°C~175°C TJ
- PackagingTape & Reel (TR)
- SeriesSTripFET™ III
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- ECCN CodeEAR99
- Voltage - Rated DC24V
- TechnologyMOSFET (Metal Oxide)
- Current Rating50A
- Base Part NumberSTD50N
- Pin Count3
- Power Dissipation-Max60W Tc
- Element ConfigurationSingle
- Power Dissipation60W
- Turn On Delay Time10 ns
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs10.5m Ω @ 25A, 10V
- Vgs(th) (Max) @ Id1.8V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds1400pF @ 25V
- Current - Continuous Drain (Id) @ 25°C50A Tc
- Gate Charge (Qg) (Max) @ Vgs24nC @ 10V
- Rise Time130ns
- Drive Voltage (Max Rds On,Min Rds On)5V 10V
- Vgs (Max)±20V
- Fall Time (Typ)16 ns
- Turn-Off Delay Time27 ns
- Continuous Drain Current (ID)50A
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage24V
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
STD50NH02LT4 Overview
A device's maximal input capacitance is 1400pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 50A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 24V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 27 ns, which is the time to charge the device's input capacitance before drain current conduction begins.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 10 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.This device reduces its overall power consumption by using drive voltage (5V 10V).
STD50NH02LT4 Features
a continuous drain current (ID) of 50A
a drain-to-source breakdown voltage of 24V voltage
the turn-off delay time is 27 ns
STD50NH02LT4 Applications
There are a lot of STMicroelectronics
STD50NH02LT4 applications of single MOSFETs transistors.
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
A device's maximal input capacitance is 1400pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 50A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 24V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 27 ns, which is the time to charge the device's input capacitance before drain current conduction begins.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 10 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.This device reduces its overall power consumption by using drive voltage (5V 10V).
STD50NH02LT4 Features
a continuous drain current (ID) of 50A
a drain-to-source breakdown voltage of 24V voltage
the turn-off delay time is 27 ns
STD50NH02LT4 Applications
There are a lot of STMicroelectronics
STD50NH02LT4 applications of single MOSFETs transistors.
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
STD50NH02LT4 More Descriptions
N-CHANNEL 24V - 0.0085 OHM - 50A STripFET III MOSFET
Power Field-Effect Transistor, 50A I(D), 24V, 0.0105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
MOSFET, N, D-PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 50A; Drain Source Voltage Vds: 24V; On Resistance Rds(on): 0.0105ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.8V; Power Dissipation
Power Field-Effect Transistor, 50A I(D), 24V, 0.0105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
MOSFET, N, D-PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 50A; Drain Source Voltage Vds: 24V; On Resistance Rds(on): 0.0105ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.8V; Power Dissipation
The three parts on the right have similar specifications to STD50NH02LT4.
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ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsOperating TemperaturePackagingSeriesPart StatusMoisture Sensitivity Level (MSL)ECCN CodeVoltage - Rated DCTechnologyCurrent RatingBase Part NumberPin CountPower Dissipation-MaxElement ConfigurationPower DissipationTurn On Delay TimeFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain to Source Breakdown VoltageRadiation HardeningRoHS StatusLead FreeTransistor Element MaterialJESD-609 CodeNumber of TerminationsResistanceTerminal FinishSubcategoryTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)JESD-30 CodeQualification StatusNumber of ElementsOperating ModeCase ConnectionTransistor ApplicationPulsed Drain Current-Max (IDM)ConfigurationDrain to Source Voltage (Vdss)Lifecycle StatusFactory Lead TimeThreshold VoltageDrain Current-Max (Abs) (ID)HeightLengthWidthREACH SVHCView Compare
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STD50NH02LT4Surface MountSurface MountTO-252-3, DPak (2 Leads Tab), SC-633-55°C~175°C TJTape & Reel (TR)STripFET™ IIIObsolete1 (Unlimited)EAR9924VMOSFET (Metal Oxide)50ASTD50N360W TcSingle60W10 nsN-Channel10.5m Ω @ 25A, 10V1.8V @ 250μA1400pF @ 25V50A Tc24nC @ 10V130ns5V 10V±20V16 ns27 ns50A20V24VNoROHS3 CompliantLead Free---------------------------
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Surface MountSurface MountTO-252-3, DPak (2 Leads Tab), SC-633-55°C~175°C TJTape & Reel (TR)STripFET™ IIIObsolete1 (Unlimited)EAR99-MOSFET (Metal Oxide)-STD50N360W TcSingle60W-N-Channel10.5m Ω @ 20A, 10V1V @ 250μA1434pF @ 25V40A Tc14nC @ 5V125ns5V 10V±20V45 ns24 ns40A20V30V-ROHS3 CompliantLead FreeSILICONe3210.5MOhmMATTE TINFET General Purpose PowerGULL WING26040R-PSSO-G2Not Qualified1ENHANCEMENT MODEDRAINSWITCHING160A----------
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Surface MountSurface MountTO-252-3, DPak (2 Leads Tab), SC-63-175°C TJCut Tape (CT)STripFET™ H6Active1 (Unlimited)EAR99-MOSFET (Metal Oxide)-STD52P-70W Tc---P-Channel12m Ω @ 26A, 10V2.5V @ 250μA3350pF @ 25V52A Tc33nC @ 4.5V-4.5V 10V±20V--52A---ROHS3 Compliant------Other Transistors-NOT SPECIFIEDNOT SPECIFIED-------Single30V--------
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Surface MountSurface MountTO-252-3, DPak (2 Leads Tab), SC-633-55°C~150°C TJTape & Reel (TR)SuperMESH3™Active1 (Unlimited)EAR99-MOSFET (Metal Oxide)-STD5N390W TcSingle90W17 nsN-Channel3.5 Ω @ 2A, 10V5V @ 100μA460pF @ 25V4A Tc19nC @ 10V7ns10V±30V18 ns32 ns4A30V950VNoROHS3 CompliantLead FreeSILICONe323.5OhmMatte Tin (Sn) - annealedFET General Purpose PowerGULL WING260-R-PSSO-G2-1ENHANCEMENT MODE-SWITCHING---ACTIVE (Last Updated: 8 months ago)12 Weeks4V4A2.4mm6.6mm6.2mmNo SVHC
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