STMicroelectronics STD3NK80ZT4
- Part Number:
- STD3NK80ZT4
- Manufacturer:
- STMicroelectronics
- Ventron No:
- 2477867-STD3NK80ZT4
- Description:
- MOSFET N-CH 800V 2.5A DPAK
- ECAD Model:
-
- Datasheet:
- STD3NK80ZT4
STMicroelectronics STD3NK80ZT4 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STD3NK80ZT4.
- Lifecycle StatusACTIVE (Last Updated: 8 months ago)
- Factory Lead Time12 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-252-3, DPak (2 Leads Tab), SC-63
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesSuperMESH™
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations2
- ECCN CodeEAR99
- Resistance4.5Ohm
- Terminal FinishMatte Tin (Sn) - annealed
- Additional FeatureAVALANCHE RATED
- SubcategoryFET General Purpose Power
- Voltage - Rated DC800V
- TechnologyMOSFET (Metal Oxide)
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Current Rating2.5A
- Base Part NumberSTD3N
- Pin Count3
- JESD-30 CodeR-PSSO-G2
- Number of Elements1
- Number of Channels1
- Power Dissipation-Max70W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation70W
- Turn On Delay Time17 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs4.5 Ω @ 1.25A, 10V
- Vgs(th) (Max) @ Id4.5V @ 50μA
- Input Capacitance (Ciss) (Max) @ Vds485pF @ 25V
- Current - Continuous Drain (Id) @ 25°C2.5A Tc
- Gate Charge (Qg) (Max) @ Vgs19nC @ 10V
- Rise Time27ns
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±30V
- Fall Time (Typ)40 ns
- Turn-Off Delay Time36 ns
- Continuous Drain Current (ID)1.25A
- Threshold Voltage3.75V
- Gate to Source Voltage (Vgs)30V
- Drain to Source Breakdown Voltage800V
- Max Junction Temperature (Tj)150°C
- Height2.52mm
- Length6.6mm
- Width6.2mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
STD3NK80ZT4 Description
These high-voltage devices are Zener-protected N-channel Power MOSFETs developed by STMicroelectronics using the SuperMESHTM technology, which is an improvement on the well-known PowerMESHTM. These devices are designed to ensure a high level of dv/dt capability for the most demanding applications, in addition to a significant reduction in on-resistance. ST's comprehensive portfolio of high voltage MOSFETs, including the groundbreaking MDmeshTM devices, are complemented by this series.
STD3NK80ZT4 Features
Extremely high dv/dt capability
100% avalanche tested
Gate charge minimized
Zener-protected
STD3NK80ZT4 Applications
Power Management
Consumer Electronics
Portable Devices
Industrial
These high-voltage devices are Zener-protected N-channel Power MOSFETs developed by STMicroelectronics using the SuperMESHTM technology, which is an improvement on the well-known PowerMESHTM. These devices are designed to ensure a high level of dv/dt capability for the most demanding applications, in addition to a significant reduction in on-resistance. ST's comprehensive portfolio of high voltage MOSFETs, including the groundbreaking MDmeshTM devices, are complemented by this series.
STD3NK80ZT4 Features
Extremely high dv/dt capability
100% avalanche tested
Gate charge minimized
Zener-protected
STD3NK80ZT4 Applications
Power Management
Consumer Electronics
Portable Devices
Industrial
STD3NK80ZT4 More Descriptions
N-CHANNEL 800V - 3.8 Ohm - 2.5A DPAK Zener-Protected SuperMESH™ Power MOSFET
MOSFET, N CH, 800V, 2.5A, DPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:2.5A; Source Voltage Vds:800V; On Resistance
Power Field-Effect Transistor, 2.5A I(D), 800V, 4.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 2.5 / Drain-Source Voltage (Vds) V = 800 / ON Resistance (Rds(on)) Ohm = 4.5 / Gate-Source Voltage V = 30 / Fall Time ns = 40 / Rise Time ns = 27 / Turn-OFF Delay Time ns = 36 / Turn-ON Delay Time ns = 17 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = DPAK / Pins = 3 / Mounting Type = Through Hole / Packaging = Tape & Reel
MOSFET, N CH, 800V, 2.5A, DPAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 2.5A; Drain Source Voltage Vds: 800V; On Resistance Rds(on): 3.8ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.75V; Power Dissipation Pd: 70W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (17-Dec-2015); Current Id Max: 2.5A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C; Termination Type: Surface Mount Device; Transistor Type: Power MOSFET; Voltage Vds Typ: 800V; Voltage Vgs Max: 30V; Voltage Vgs Rds on Measurement: 10V
MOSFET, N CH, 800V, 2.5A, DPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:2.5A; Source Voltage Vds:800V; On Resistance
Power Field-Effect Transistor, 2.5A I(D), 800V, 4.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 2.5 / Drain-Source Voltage (Vds) V = 800 / ON Resistance (Rds(on)) Ohm = 4.5 / Gate-Source Voltage V = 30 / Fall Time ns = 40 / Rise Time ns = 27 / Turn-OFF Delay Time ns = 36 / Turn-ON Delay Time ns = 17 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = DPAK / Pins = 3 / Mounting Type = Through Hole / Packaging = Tape & Reel
MOSFET, N CH, 800V, 2.5A, DPAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 2.5A; Drain Source Voltage Vds: 800V; On Resistance Rds(on): 3.8ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.75V; Power Dissipation Pd: 70W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (17-Dec-2015); Current Id Max: 2.5A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C; Termination Type: Surface Mount Device; Transistor Type: Power MOSFET; Voltage Vds Typ: 800V; Voltage Vgs Max: 30V; Voltage Vgs Rds on Measurement: 10V
The three parts on the right have similar specifications to STD3NK80ZT4.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingSeriesJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeResistanceTerminal FinishAdditional FeatureSubcategoryVoltage - Rated DCTechnologyTerminal FormPeak Reflow Temperature (Cel)Current RatingBase Part NumberPin CountJESD-30 CodeNumber of ElementsNumber of ChannelsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Drain to Source Breakdown VoltageMax Junction Temperature (Tj)HeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreePublishedReach Compliance CodeQualification StatusCase ConnectionPulsed Drain Current-Max (IDM)Avalanche Energy Rating (Eas)Drain Current-Max (Abs) (ID)View Compare
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STD3NK80ZT4ACTIVE (Last Updated: 8 months ago)12 WeeksSurface MountSurface MountTO-252-3, DPak (2 Leads Tab), SC-633SILICON-55°C~150°C TJTape & Reel (TR)SuperMESH™e3Active1 (Unlimited)2EAR994.5OhmMatte Tin (Sn) - annealedAVALANCHE RATEDFET General Purpose Power800VMOSFET (Metal Oxide)GULL WING2602.5ASTD3N3R-PSSO-G21170W TcSingleENHANCEMENT MODE70W17 nsN-ChannelSWITCHING4.5 Ω @ 1.25A, 10V4.5V @ 50μA485pF @ 25V2.5A Tc19nC @ 10V27ns10V±30V40 ns36 ns1.25A3.75V30V800V150°C2.52mm6.6mm6.2mmNo SVHCNoROHS3 CompliantLead Free-------- -
--------Tape & Reel (TR)--Obsolete1 (Unlimited)---------------------------------------------2014------
-
--Through HoleThrough HoleTO-251-3 Short Leads, IPak, TO-251AA3SILICON-55°C~175°C TJTubeSTripFET™ III-Obsolete3 (168 Hours)3EAR99--LOGIC LEVEL COMPATIBLE, LOW THRESHOLDFET General Purpose Power-MOSFET (Metal Oxide)---STD383-1-40W TcSingleENHANCEMENT MODE40W-N-ChannelSWITCHING13.5m Ω @ 19A, 10V2.5V @ 250μA1070pF @ 25V38A Tc24nC @ 10V62ns5V 10V±20V12 ns25 ns38A-20V24V------ROHS3 Compliant--unknownNot QualifiedDRAIN152A250 mJ-
-
ACTIVE (Last Updated: 8 months ago)12 WeeksSurface MountSurface MountTO-252-3, DPak (2 Leads Tab), SC-633--55°C~150°C TJTape & Reel (TR)SuperMESH3™-Active1 (Unlimited)-EAR99---FET General Purpose Power-MOSFET (Metal Oxide)---STD3N--1-30W TcSingle-30W7 nsN-Channel-3.4 Ω @ 900mA, 10V4.5V @ 50μA165pF @ 50V2A Tc11nC @ 10V8ns10V±30V14 ns18 ns2A-30V400V-----NoROHS3 Compliant-------2A
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