STMicroelectronics STB8NM60D

Name: STB8NM60D
Brand: STMicroelectronics
SKU: 2480509-STB8NM60D
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: STB8NM60D

Manufacturer:: STMicroelectronics

Ventron No:: 2480509-STB8NM60D

Description:: MOSFET N-CH 600V 8A D2PAK

ECAD Model:

Datasheet:: STB8NM60D

Specifications

STMicroelectronics STB8NM60D technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STB8NM60D.

Lifecycle Status
NRND (Last Updated: 8 months ago)
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-263-3, D2Pak (2 Leads Tab), TO-263AB
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-65°C~150°C TJ
Packaging
Tape & Reel (TR)
Series
MDmesh™
JESD-609 Code
e3
Part Status
Not For New Designs
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Resistance
1Ohm
Terminal Finish
Matte Tin (Sn)
Additional Feature
AVALANCHE RATED
Subcategory
FET General Purpose Power
Voltage - Rated DC
600V
Technology
MOSFET (Metal Oxide)
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
245
Current Rating
8A
Time@Peak Reflow Temperature-Max (s)
30
Base Part Number
STB8N
Pin Count
3
JESD-30 Code
R-PSSO-G2
Number of Elements
1
Power Dissipation-Max
100W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
100W
Turn On Delay Time
13 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
1 Ω @ 2.5A, 10V
Vgs(th) (Max) @ Id
5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
380pF @ 25V
Current - Continuous Drain (Id) @ 25°C
8A Tc
Gate Charge (Qg) (Max) @ Vgs
18nC @ 10V
Rise Time
10ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±30V
Fall Time (Typ)
8 ns
Turn-Off Delay Time
26 ns
Continuous Drain Current (ID)
8A
Gate to Source Voltage (Vgs)
30V
Drain Current-Max (Abs) (ID)
8A
Drain to Source Breakdown Voltage
600V
Avalanche Energy Rating (Eas)
200 mJ
Height
4.6mm
Length
10.4mm
Width
9.35mm
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

STB8NM60D Overview
When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 200 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 380pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 8A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=600V. And this device has 600V drain to source breakdown voltage.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 8A.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 26 ns.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 13 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 30V.By using drive voltage (10V), this device helps reduce its overall power consumption.

STB8NM60D Features
the avalanche energy rating (Eas) is 200 mJ
a continuous drain current (ID) of 8A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 26 ns

STB8NM60D Applications
There are a lot of STMicroelectronics
STB8NM60D applications of single MOSFETs transistors.

LCD/LED TV
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools

STB8NM60D More Descriptions

N-Channel 600 V 1 Ohm Surface Mount MDmesh Power MosFet - D2PAK
Trans MOSFET N-CH 600V 8A 3-Pin(2 Tab) D2PAK T/R
N-CHANNEL 600V - 0.9Ohm - 8A - TO-220/D2PAK

Product Comparison

The three parts on the right have similar specifications to STB8NM60D.

Image

Part Number

Manufacturer

Lifecycle Status

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Series

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Resistance

Terminal Finish

Additional Feature

Subcategory

Voltage - Rated DC

Technology

Terminal Form

Peak Reflow Temperature (Cel)

Current Rating

Time@Peak Reflow Temperature-Max (s)

Base Part Number

Pin Count

JESD-30 Code

Number of Elements

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Gate to Source Voltage (Vgs)

Drain Current-Max (Abs) (ID)

Drain to Source Breakdown Voltage

Avalanche Energy Rating (Eas)

Height

Length

Width

Radiation Hardening

RoHS Status

Lead Free

Terminal Position

Qualification Status

Configuration

Case Connection

Drain-source On Resistance-Max

Pulsed Drain Current-Max (IDM)

Factory Lead Time

Drain to Source Voltage (Vdss)

View Compare
STB8NM60D

STMicroelectronics

NRND (Last Updated: 8 months ago)

Surface Mount

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

3

SILICON

-65°C~150°C TJ

Tape & Reel (TR)

MDmesh™

e3

Not For New Designs

1 (Unlimited)

2

EAR99

1Ohm

Matte Tin (Sn)

AVALANCHE RATED

FET General Purpose Power

600V

MOSFET (Metal Oxide)

GULL WING

245

8A

30

STB8N

3

R-PSSO-G2

1

100W Tc

Single

ENHANCEMENT MODE

100W

13 ns

N-Channel

SWITCHING

1 Ω @ 2.5A, 10V

5V @ 250μA

380pF @ 25V

8A Tc

18nC @ 10V

10ns

10V

±30V

8 ns

26 ns

8A

30V

8A

600V

200 mJ

4.6mm

10.4mm

9.35mm

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-
STB80NF55-08-1

STMicroelectronics

-

Through Hole

Through Hole

TO-262-3 Long Leads, I2Pak, TO-262AA

-

SILICON

-55°C~175°C TJ

Tube

STripFET™ II

e3

Obsolete

1 (Unlimited)

3

EAR99

-

TIN

-

FET General Purpose Power

55V

MOSFET (Metal Oxide)

-

245

80A

NOT SPECIFIED

STB80N

3

R-PSIP-T3

1

300W Tc

-

ENHANCEMENT MODE

-

-

N-Channel

SWITCHING

8m Ω @ 40A, 10V

4V @ 250μA

3850pF @ 25V

80A Tc

155nC @ 10V

85ns

10V

±20V

-

-

80A

-

-

-

870 mJ

-

-

-

-

Non-RoHS Compliant

Contains Lead

SINGLE

Not Qualified

SINGLE WITH BUILT-IN DIODE

DRAIN

0.008Ohm

320A

-

-

STB8NM60D vs STB80NF55-08-1
STB85NS04Z

STMicroelectronics

-

Surface Mount

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

3

SILICON

-55°C~175°C TJ

Tape & Reel (TR)

SAFeFET™

-

Obsolete

1 (Unlimited)

3

EAR99

-

-

-

-

-

MOSFET (Metal Oxide)

THROUGH-HOLE

-

-

-

STB85N

3

-

1

215W Tc

Single

ENHANCEMENT MODE

215W

-

N-Channel

SWITCHING

15m Ω @ 30A, 10V

4V @ 1mA

2500pF @ 25V

80A Tc

100nC @ 10V

-

10V

±18V

145 ns

-

80A

18V

60A

33V

550 mJ

-

-

-

No

ROHS3 Compliant

-

-

-

-

-

0.015Ohm

-

-

-

STB8NM60D vs STB85NS04Z
STB80NF55-08AG

STMicroelectronics

ACTIVE (Last Updated: 7 months ago)

-

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

-

-

-55°C~175°C TJ

Tape & Reel (TR)

Automotive, AEC-Q101, STripFET™

-

Active

1 (Unlimited)

-

-

-

-

-

-

-

MOSFET (Metal Oxide)

-

-

-

-

STB80N

-

-

-

300W Tc

-

-

-

-

N-Channel

-

8m Ω @ 40A, 10V

4V @ 250μA

3740pF @ 15V

80A Tc

112nC @ 10V

-

10V

±20V

-

-

-

-

-

-

-

-

-

-

-

ROHS3 Compliant

-

-

-

-

-

-

-

12 Weeks

55V

STB8NM60D vs STB80NF55-08AG