STMicroelectronics STB6N80K5

Name: STB6N80K5
Brand: STMicroelectronics
SKU: 2482019-STB6N80K5
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: STB6N80K5

Manufacturer:: STMicroelectronics

Ventron No:: 2482019-STB6N80K5

Description:: MOSFET N-CH 800V 4.5A D2PAK

ECAD Model:

Datasheet:: STB6N80K5

Specifications

STMicroelectronics STB6N80K5 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STB6N80K5.

Lifecycle Status
ACTIVE (Last Updated: 8 months ago)
Factory Lead Time
26 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-263-3, D2Pak (2 Leads Tab), TO-263AB
Weight
3.949996g
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Cut Tape (CT)
Series
SuperMESH5™
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Technology
MOSFET (Metal Oxide)
Terminal Form
GULL WING
Base Part Number
STB6N
JESD-30 Code
R-PSSO-G2
Number of Elements
1
Number of Channels
1
Power Dissipation-Max
85W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
1.6 Ω @ 2A, 10V
Vgs(th) (Max) @ Id
5V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds
255pF @ 100V
Current - Continuous Drain (Id) @ 25°C
4.5A Tc
Gate Charge (Qg) (Max) @ Vgs
7.5nC @ 10V
Drain to Source Voltage (Vdss)
800V
Drive Voltage (Max Rds On,Min Rds On)
10V
Continuous Drain Current (ID)
4.5A
Gate to Source Voltage (Vgs)
30V
DS Breakdown Voltage-Min
800V
Avalanche Energy Rating (Eas)
85 mJ
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

STB6N80K5 Overview
There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 85 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 255pF @ 100V.This device has a continuous drain current (ID) of [4.5A], which is its maximum continuous current.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 800V.In order to operate this transistor, a voltage of 800V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).

STB6N80K5 Features
the avalanche energy rating (Eas) is 85 mJ
a continuous drain current (ID) of 4.5A
a 800V drain to source voltage (Vdss)

STB6N80K5 Applications
There are a lot of STMicroelectronics
STB6N80K5 applications of single MOSFETs transistors.

Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit

STB6N80K5 More Descriptions

N-channel 800 V, 1.3 Ohm typ., 4.5 A MDmesh K5 Power MOSFET in D2PAK package
Trans MOSFET N-CH 800V 4.5A 3-Pin(2 Tab) D2PAK T/R
N-Channel 800 V 4.5 A 1. 6 mOhm Surface Mount SuperMESH K5 Mosfet - D2Pak

Product Comparison

The three parts on the right have similar specifications to STB6N80K5.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Mount

Mounting Type

Package / Case

Weight

Transistor Element Material

Operating Temperature

Packaging

Series

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Technology

Terminal Form

Base Part Number

JESD-30 Code

Number of Elements

Number of Channels

Power Dissipation-Max

Element Configuration

Operating Mode

Case Connection

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Continuous Drain Current (ID)

Gate to Source Voltage (Vgs)

DS Breakdown Voltage-Min

Avalanche Energy Rating (Eas)

RoHS Status

Lead Free

Number of Pins

JESD-609 Code

Pbfree Code

Termination

Resistance

Terminal Finish

Subcategory

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Pin Count

Power Dissipation

Turn On Delay Time

Rise Time

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Threshold Voltage

Drain to Source Breakdown Voltage

Dual Supply Voltage

Nominal Vgs

Height

Length

Width

REACH SVHC

Radiation Hardening

View Compare
STB6N80K5

STMicroelectronics

ACTIVE (Last Updated: 8 months ago)

26 Weeks

Surface Mount

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

3.949996g

SILICON

-55°C~150°C TJ

Cut Tape (CT)

SuperMESH5™

Active

1 (Unlimited)

2

EAR99

MOSFET (Metal Oxide)

GULL WING

STB6N

R-PSSO-G2

1

1

85W Tc

Single

ENHANCEMENT MODE

DRAIN

N-Channel

SWITCHING

1.6 Ω @ 2A, 10V

5V @ 100μA

255pF @ 100V

4.5A Tc

7.5nC @ 10V

800V

10V

4.5A

30V

800V

85 mJ

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
STB6N65K3

STMicroelectronics

-

-

-

-

D2PAK

-

-

-

Tape & Reel (TR)

-

Active

1 (Unlimited)

-

-

-

-

STB6N

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

STB6N80K5 vs STB6N65K3
STB60N55F3

STMicroelectronics

-

-

Surface Mount

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

-

SILICON

-55°C~175°C TJ

Tape & Reel (TR)

STripFET™ III

Obsolete

1 (Unlimited)

2

EAR99

MOSFET (Metal Oxide)

GULL WING

STB60N

R-PSSO-G2

1

-

110W Tc

Single

ENHANCEMENT MODE

DRAIN

N-Channel

SWITCHING

8.5m Ω @ 32A, 10V

4V @ 250μA

2200pF @ 25V

80A Tc

45nC @ 10V

-

10V

80A

20V

-

-

ROHS3 Compliant

Lead Free

3

e3

yes

SMD/SMT

8.5MOhm

Matte Tin (Sn) - annealed

FET General Purpose Power

245

30

3

110W

20 ns

50ns

±20V

11.5 ns

35 ns

4V

55V

55V

4 V

4.6mm

10.75mm

10.4mm

No SVHC

No

STB6N80K5 vs STB60N55F3
STB6N65M2

STMicroelectronics

-

26 Weeks

Surface Mount

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

3.949996g

-

-55°C~150°C TJ

Cut Tape (CT)

MDmesh™

Active

1 (Unlimited)

-

EAR99

MOSFET (Metal Oxide)

-

STB6N

-

-

1

60W Tc

-

-

-

N-Channel

-

1.35 Ω @ 2A, 10V

4V @ 250μA

226pF @ 100V

4A Tc

9.8nC @ 10V

-

10V

4A

25V

-

-

ROHS3 Compliant

-

3

-

-

-

-

-

-

NOT SPECIFIED

NOT SPECIFIED

-

-

19 ns

7ns

±25V

20 ns

6.5 ns

3V

650V

-

-

-

-

-

No SVHC

-

STB6N80K5 vs STB6N65M2