STMicroelectronics STB6NK60Z-1
- Part Number:
- STB6NK60Z-1
- Manufacturer:
- STMicroelectronics
- Ventron No:
- 2849877-STB6NK60Z-1
- Description:
- MOSFET N-CH 600V 6A I2PAK
- Datasheet:
- STB6NK60Z-1
STMicroelectronics STB6NK60Z-1 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STB6NK60Z-1.
- Lifecycle StatusACTIVE (Last Updated: 8 months ago)
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-262-3 Long Leads, I2Pak, TO-262AA
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- SeriesSuperMESH™
- JESD-609 Codee3
- Part StatusNot For New Designs
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Resistance1.2Ohm
- Terminal FinishTin (Sn)
- SubcategoryFET General Purpose Power
- TechnologyMOSFET (Metal Oxide)
- Base Part NumberSTB6N
- Pin Count3
- Number of Elements1
- Power Dissipation-Max110W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation110W
- Turn On Delay Time14 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs1.2 Ω @ 3A, 10V
- Vgs(th) (Max) @ Id4.5V @ 100μA
- Input Capacitance (Ciss) (Max) @ Vds905pF @ 25V
- Current - Continuous Drain (Id) @ 25°C6A Tc
- Gate Charge (Qg) (Max) @ Vgs46nC @ 10V
- Rise Time14ns
- Drive Voltage (Max Rds On,Min Rds On)10V
- Fall Time (Typ)19 ns
- Turn-Off Delay Time47 ns
- Continuous Drain Current (ID)6A
- Gate to Source Voltage (Vgs)30V
- Drain Current-Max (Abs) (ID)6A
- Drain to Source Breakdown Voltage600V
- Pulsed Drain Current-Max (IDM)24A
- Avalanche Energy Rating (Eas)210 mJ
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
STB6NK60Z-1 Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 210 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 905pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 6A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 600V, and this device has a drainage-to-source breakdown voltage of 600VV.Drain current refers to the maximum continuous current a device can conduct, and it is 6A.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 47 ns.Peak drain current is 24A, which is the maximum pulsed drain current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 14 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 30V to 1.Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
STB6NK60Z-1 Features
the avalanche energy rating (Eas) is 210 mJ
a continuous drain current (ID) of 6A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 47 ns
based on its rated peak drain current 24A.
STB6NK60Z-1 Applications
There are a lot of STMicroelectronics
STB6NK60Z-1 applications of single MOSFETs transistors.
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 210 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 905pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 6A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 600V, and this device has a drainage-to-source breakdown voltage of 600VV.Drain current refers to the maximum continuous current a device can conduct, and it is 6A.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 47 ns.Peak drain current is 24A, which is the maximum pulsed drain current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 14 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 30V to 1.Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
STB6NK60Z-1 Features
the avalanche energy rating (Eas) is 210 mJ
a continuous drain current (ID) of 6A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 47 ns
based on its rated peak drain current 24A.
STB6NK60Z-1 Applications
There are a lot of STMicroelectronics
STB6NK60Z-1 applications of single MOSFETs transistors.
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
STB6NK60Z-1 More Descriptions
N-channel 600 V - 1 Ohm - 6 A - I2PAK Zener-Protected SuperMESH(TM) Power MOSFET
MOSFET N-CH 600V 6A I2PAK / Trans MOSFET N-CH 600V 6A 3-Pin(3 Tab) I2PAK Tube
Power Field-Effect Transistor, 6A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
MOSFET N-CH 600V 6A I2PAK / Trans MOSFET N-CH 600V 6A 3-Pin(3 Tab) I2PAK Tube
Power Field-Effect Transistor, 6A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
The three parts on the right have similar specifications to STB6NK60Z-1.
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ImagePart NumberManufacturerLifecycle StatusMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingSeriesJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeResistanceTerminal FinishSubcategoryTechnologyBase Part NumberPin CountNumber of ElementsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain Current-Max (Abs) (ID)Drain to Source Breakdown VoltagePulsed Drain Current-Max (IDM)Avalanche Energy Rating (Eas)Radiation HardeningRoHS StatusLead FreePbfree CodeTerminationTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)JESD-30 CodeCase ConnectionVgs (Max)Threshold VoltageDual Supply VoltageNominal VgsHeightLengthWidthREACH SVHCVoltage - Rated DCCurrent RatingDrain-source On Resistance-MaxView Compare
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STB6NK60Z-1ACTIVE (Last Updated: 8 months ago)Through HoleThrough HoleTO-262-3 Long Leads, I2Pak, TO-262AA3SILICON-55°C~150°C TJTubeSuperMESH™e3Not For New Designs1 (Unlimited)3EAR991.2OhmTin (Sn)FET General Purpose PowerMOSFET (Metal Oxide)STB6N31110W TcSingleENHANCEMENT MODE110W14 nsN-ChannelSWITCHING1.2 Ω @ 3A, 10V4.5V @ 100μA905pF @ 25V6A Tc46nC @ 10V14ns10V19 ns47 ns6A30V6A600V24A210 mJNoROHS3 CompliantLead Free-------------------
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---D2PAK---Tape & Reel (TR)--Active1 (Unlimited)------STB6N-------------------------ROHS3 CompliantLead Free------------------
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-Surface MountSurface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB3SILICON-55°C~175°C TJTape & Reel (TR)STripFET™ IIIe3Obsolete1 (Unlimited)2EAR998.5MOhmMatte Tin (Sn) - annealedFET General Purpose PowerMOSFET (Metal Oxide)STB60N31110W TcSingleENHANCEMENT MODE110W20 nsN-ChannelSWITCHING8.5m Ω @ 32A, 10V4V @ 250μA2200pF @ 25V80A Tc45nC @ 10V50ns10V11.5 ns35 ns80A20V-55V--NoROHS3 CompliantLead FreeyesSMD/SMTGULL WING24530R-PSSO-G2DRAIN±20V4V55V4 V4.6mm10.75mm10.4mmNo SVHC---
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-Surface MountSurface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB3SILICON-55°C~175°C TJTape & Reel (TR)STripFET™ IIIe3Obsolete1 (Unlimited)2EAR99-Matte Tin (Sn)FET General Purpose PowerMOSFET (Metal Oxide)STB60N4170W TcSingleENHANCEMENT MODE70W10 nsN-ChannelSWITCHING10.5m Ω @ 30A, 10V2.5V @ 250μA1400pF @ 15V60A Tc32nC @ 10V130ns5V 10V16 ns27 ns60A20V-24V240A280 mJNoROHS3 CompliantLead Freeyes-GULL WING24530R-PSSO-G2DRAIN±20V-------24V60A0.0105Ohm
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