STB60NF06T4

STMicroelectronics STB60NF06T4

Part Number:
STB60NF06T4
Manufacturer:
STMicroelectronics
Ventron No:
2481957-STB60NF06T4
Description:
MOSFET N-CH 60V 60A D2PAK
ECAD Model:
Datasheet:
STB60NF06T4

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Specifications
STMicroelectronics STB60NF06T4 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STB60NF06T4.
  • Lifecycle Status
    ACTIVE (Last Updated: 7 months ago)
  • Factory Lead Time
    12 Weeks
  • Contact Plating
    Tin
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -65°C~175°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    STripFET™ II
  • JESD-609 Code
    e3
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    2
  • Termination
    SMD/SMT
  • ECCN Code
    EAR99
  • Resistance
    16mOhm
  • Subcategory
    FET General Purpose Power
  • Voltage - Rated DC
    60V
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    245
  • Current Rating
    60A
  • Time@Peak Reflow Temperature-Max (s)
    30
  • Base Part Number
    STB60N
  • Pin Count
    3
  • JESD-30 Code
    R-PSSO-G2
  • Number of Elements
    1
  • Power Dissipation-Max
    110W Tc
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    110W
  • Turn On Delay Time
    16 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    16m Ω @ 30A, 10V
  • Vgs(th) (Max) @ Id
    4V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    1810pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    60A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    66nC @ 10V
  • Rise Time
    108ns
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    20 ns
  • Turn-Off Delay Time
    43 ns
  • Continuous Drain Current (ID)
    60A
  • Threshold Voltage
    3V
  • Gate to Source Voltage (Vgs)
    20V
  • Drain to Source Breakdown Voltage
    60V
  • Pulsed Drain Current-Max (IDM)
    240A
  • Dual Supply Voltage
    60V
  • Nominal Vgs
    3 V
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
STB60NF06T4 Overview
A device's maximal input capacitance is 1810pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 60A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 60V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 43 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 240A, which is its maximum rated peak drain current.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 16 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.An electrical device's threshold voltage is the point at which any of its operations will become active, and this transistor has a 3V threshold voltage.This device reduces its overall power consumption by using drive voltage (10V).

STB60NF06T4 Features
a continuous drain current (ID) of 60A
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 43 ns
based on its rated peak drain current 240A.
a threshold voltage of 3V


STB60NF06T4 Applications
There are a lot of STMicroelectronics
STB60NF06T4 applications of single MOSFETs transistors.


Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
STB60NF06T4 More Descriptions
N-Channel 60V - 0.014Ohm - 60A - D2APK StripFET(TM) II POWER MOSFET
Trans MOSFET N-CH 60V 60A 3-Pin(2 Tab) D2PAK T/R - Tape and Reel
N-Channel 60 V 0.016 Ohm Surface Mount STripFET II Power MosFet - D2PAK
MOSFET, N, D2-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:60A; Drain Source Voltage Vds:60V; On Resistance Rds(on):16mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:110W; Operating Temperature Range:-65°C to 175°C; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Avalanche Single Pulse Energy Eas:360mJ; Capacitance Ciss Typ:1810pF; Current Iar:30A; Current Id Max:60A; Junction Temperature Tj Max:175°C; Junction Temperature Tj Min:-55°C; On State resistance @ Vgs = 10V:16mohm; Package / Case:D2-PAK; Power Dissipation Pd:110W; Power Dissipation Pd:110W; Pulse Current Idm:240A; Termination Type:SMD; Voltage Vds Typ:60V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V; Voltage Vgs th Min:2V
Product Comparison
The three parts on the right have similar specifications to STB60NF06T4.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Contact Plating
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    JESD-609 Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    Termination
    ECCN Code
    Resistance
    Subcategory
    Voltage - Rated DC
    Technology
    Terminal Form
    Peak Reflow Temperature (Cel)
    Current Rating
    Time@Peak Reflow Temperature-Max (s)
    Base Part Number
    Pin Count
    JESD-30 Code
    Number of Elements
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Pulsed Drain Current-Max (IDM)
    Dual Supply Voltage
    Nominal Vgs
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Pbfree Code
    Terminal Finish
    Case Connection
    Height
    Length
    Width
    Drain-source On Resistance-Max
    Avalanche Energy Rating (Eas)
    Weight
    Number of Channels
    View Compare
  • STB60NF06T4
    STB60NF06T4
    ACTIVE (Last Updated: 7 months ago)
    12 Weeks
    Tin
    Surface Mount
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    3
    SILICON
    -65°C~175°C TJ
    Tape & Reel (TR)
    STripFET™ II
    e3
    Active
    1 (Unlimited)
    2
    SMD/SMT
    EAR99
    16mOhm
    FET General Purpose Power
    60V
    MOSFET (Metal Oxide)
    GULL WING
    245
    60A
    30
    STB60N
    3
    R-PSSO-G2
    1
    110W Tc
    Single
    ENHANCEMENT MODE
    110W
    16 ns
    N-Channel
    SWITCHING
    16m Ω @ 30A, 10V
    4V @ 250μA
    1810pF @ 25V
    60A Tc
    66nC @ 10V
    108ns
    10V
    ±20V
    20 ns
    43 ns
    60A
    3V
    20V
    60V
    240A
    60V
    3 V
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • STB60N55F3
    -
    -
    -
    Surface Mount
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    3
    SILICON
    -55°C~175°C TJ
    Tape & Reel (TR)
    STripFET™ III
    e3
    Obsolete
    1 (Unlimited)
    2
    SMD/SMT
    EAR99
    8.5MOhm
    FET General Purpose Power
    -
    MOSFET (Metal Oxide)
    GULL WING
    245
    -
    30
    STB60N
    3
    R-PSSO-G2
    1
    110W Tc
    Single
    ENHANCEMENT MODE
    110W
    20 ns
    N-Channel
    SWITCHING
    8.5m Ω @ 32A, 10V
    4V @ 250μA
    2200pF @ 25V
    80A Tc
    45nC @ 10V
    50ns
    10V
    ±20V
    11.5 ns
    35 ns
    80A
    4V
    20V
    55V
    -
    55V
    4 V
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    yes
    Matte Tin (Sn) - annealed
    DRAIN
    4.6mm
    10.75mm
    10.4mm
    -
    -
    -
    -
  • STB60NH02LT4
    -
    -
    -
    Surface Mount
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    3
    SILICON
    -55°C~175°C TJ
    Tape & Reel (TR)
    STripFET™ III
    e3
    Obsolete
    1 (Unlimited)
    2
    -
    EAR99
    -
    FET General Purpose Power
    24V
    MOSFET (Metal Oxide)
    GULL WING
    245
    60A
    30
    STB60N
    4
    R-PSSO-G2
    1
    70W Tc
    Single
    ENHANCEMENT MODE
    70W
    10 ns
    N-Channel
    SWITCHING
    10.5m Ω @ 30A, 10V
    2.5V @ 250μA
    1400pF @ 15V
    60A Tc
    32nC @ 10V
    130ns
    5V 10V
    ±20V
    16 ns
    27 ns
    60A
    -
    20V
    24V
    240A
    -
    -
    -
    No
    ROHS3 Compliant
    Lead Free
    yes
    Matte Tin (Sn)
    DRAIN
    -
    -
    -
    0.0105Ohm
    280 mJ
    -
    -
  • STB6N65M2
    -
    26 Weeks
    -
    Surface Mount
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    3
    -
    -55°C~150°C TJ
    Cut Tape (CT)
    MDmesh™
    -
    Active
    1 (Unlimited)
    -
    -
    EAR99
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    NOT SPECIFIED
    -
    NOT SPECIFIED
    STB6N
    -
    -
    -
    60W Tc
    -
    -
    -
    19 ns
    N-Channel
    -
    1.35 Ω @ 2A, 10V
    4V @ 250μA
    226pF @ 100V
    4A Tc
    9.8nC @ 10V
    7ns
    10V
    ±25V
    20 ns
    6.5 ns
    4A
    3V
    25V
    650V
    -
    -
    -
    No SVHC
    -
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    3.949996g
    1
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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