STMicroelectronics STB60NF06T4
- Part Number:
- STB60NF06T4
- Manufacturer:
- STMicroelectronics
- Ventron No:
- 2481957-STB60NF06T4
- Description:
- MOSFET N-CH 60V 60A D2PAK
- Datasheet:
- STB60NF06T4
STMicroelectronics STB60NF06T4 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STB60NF06T4.
- Lifecycle StatusACTIVE (Last Updated: 7 months ago)
- Factory Lead Time12 Weeks
- Contact PlatingTin
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-263-3, D2Pak (2 Leads Tab), TO-263AB
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-65°C~175°C TJ
- PackagingTape & Reel (TR)
- SeriesSTripFET™ II
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations2
- TerminationSMD/SMT
- ECCN CodeEAR99
- Resistance16mOhm
- SubcategoryFET General Purpose Power
- Voltage - Rated DC60V
- TechnologyMOSFET (Metal Oxide)
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)245
- Current Rating60A
- Time@Peak Reflow Temperature-Max (s)30
- Base Part NumberSTB60N
- Pin Count3
- JESD-30 CodeR-PSSO-G2
- Number of Elements1
- Power Dissipation-Max110W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation110W
- Turn On Delay Time16 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs16m Ω @ 30A, 10V
- Vgs(th) (Max) @ Id4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds1810pF @ 25V
- Current - Continuous Drain (Id) @ 25°C60A Tc
- Gate Charge (Qg) (Max) @ Vgs66nC @ 10V
- Rise Time108ns
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Fall Time (Typ)20 ns
- Turn-Off Delay Time43 ns
- Continuous Drain Current (ID)60A
- Threshold Voltage3V
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage60V
- Pulsed Drain Current-Max (IDM)240A
- Dual Supply Voltage60V
- Nominal Vgs3 V
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
STB60NF06T4 Overview
A device's maximal input capacitance is 1810pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 60A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 60V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 43 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 240A, which is its maximum rated peak drain current.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 16 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.An electrical device's threshold voltage is the point at which any of its operations will become active, and this transistor has a 3V threshold voltage.This device reduces its overall power consumption by using drive voltage (10V).
STB60NF06T4 Features
a continuous drain current (ID) of 60A
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 43 ns
based on its rated peak drain current 240A.
a threshold voltage of 3V
STB60NF06T4 Applications
There are a lot of STMicroelectronics
STB60NF06T4 applications of single MOSFETs transistors.
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
A device's maximal input capacitance is 1810pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 60A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 60V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 43 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 240A, which is its maximum rated peak drain current.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 16 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.An electrical device's threshold voltage is the point at which any of its operations will become active, and this transistor has a 3V threshold voltage.This device reduces its overall power consumption by using drive voltage (10V).
STB60NF06T4 Features
a continuous drain current (ID) of 60A
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 43 ns
based on its rated peak drain current 240A.
a threshold voltage of 3V
STB60NF06T4 Applications
There are a lot of STMicroelectronics
STB60NF06T4 applications of single MOSFETs transistors.
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
STB60NF06T4 More Descriptions
N-Channel 60V - 0.014Ohm - 60A - D2APK StripFET(TM) II POWER MOSFET
Trans MOSFET N-CH 60V 60A 3-Pin(2 Tab) D2PAK T/R - Tape and Reel
N-Channel 60 V 0.016 Ohm Surface Mount STripFET II Power MosFet - D2PAK
MOSFET, N, D2-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:60A; Drain Source Voltage Vds:60V; On Resistance Rds(on):16mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:110W; Operating Temperature Range:-65°C to 175°C; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Avalanche Single Pulse Energy Eas:360mJ; Capacitance Ciss Typ:1810pF; Current Iar:30A; Current Id Max:60A; Junction Temperature Tj Max:175°C; Junction Temperature Tj Min:-55°C; On State resistance @ Vgs = 10V:16mohm; Package / Case:D2-PAK; Power Dissipation Pd:110W; Power Dissipation Pd:110W; Pulse Current Idm:240A; Termination Type:SMD; Voltage Vds Typ:60V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V; Voltage Vgs th Min:2V
Trans MOSFET N-CH 60V 60A 3-Pin(2 Tab) D2PAK T/R - Tape and Reel
N-Channel 60 V 0.016 Ohm Surface Mount STripFET II Power MosFet - D2PAK
MOSFET, N, D2-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:60A; Drain Source Voltage Vds:60V; On Resistance Rds(on):16mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:110W; Operating Temperature Range:-65°C to 175°C; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Avalanche Single Pulse Energy Eas:360mJ; Capacitance Ciss Typ:1810pF; Current Iar:30A; Current Id Max:60A; Junction Temperature Tj Max:175°C; Junction Temperature Tj Min:-55°C; On State resistance @ Vgs = 10V:16mohm; Package / Case:D2-PAK; Power Dissipation Pd:110W; Power Dissipation Pd:110W; Pulse Current Idm:240A; Termination Type:SMD; Voltage Vds Typ:60V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V; Voltage Vgs th Min:2V
The three parts on the right have similar specifications to STB60NF06T4.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeContact PlatingMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingSeriesJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminationECCN CodeResistanceSubcategoryVoltage - Rated DCTechnologyTerminal FormPeak Reflow Temperature (Cel)Current RatingTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountJESD-30 CodeNumber of ElementsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Drain to Source Breakdown VoltagePulsed Drain Current-Max (IDM)Dual Supply VoltageNominal VgsREACH SVHCRadiation HardeningRoHS StatusLead FreePbfree CodeTerminal FinishCase ConnectionHeightLengthWidthDrain-source On Resistance-MaxAvalanche Energy Rating (Eas)WeightNumber of ChannelsView Compare
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STB60NF06T4ACTIVE (Last Updated: 7 months ago)12 WeeksTinSurface MountSurface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB3SILICON-65°C~175°C TJTape & Reel (TR)STripFET™ IIe3Active1 (Unlimited)2SMD/SMTEAR9916mOhmFET General Purpose Power60VMOSFET (Metal Oxide)GULL WING24560A30STB60N3R-PSSO-G21110W TcSingleENHANCEMENT MODE110W16 nsN-ChannelSWITCHING16m Ω @ 30A, 10V4V @ 250μA1810pF @ 25V60A Tc66nC @ 10V108ns10V±20V20 ns43 ns60A3V20V60V240A60V3 VNo SVHCNoROHS3 CompliantLead Free-----------
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---Surface MountSurface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB3SILICON-55°C~175°C TJTape & Reel (TR)STripFET™ IIIe3Obsolete1 (Unlimited)2SMD/SMTEAR998.5MOhmFET General Purpose Power-MOSFET (Metal Oxide)GULL WING245-30STB60N3R-PSSO-G21110W TcSingleENHANCEMENT MODE110W20 nsN-ChannelSWITCHING8.5m Ω @ 32A, 10V4V @ 250μA2200pF @ 25V80A Tc45nC @ 10V50ns10V±20V11.5 ns35 ns80A4V20V55V-55V4 VNo SVHCNoROHS3 CompliantLead FreeyesMatte Tin (Sn) - annealedDRAIN4.6mm10.75mm10.4mm----
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---Surface MountSurface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB3SILICON-55°C~175°C TJTape & Reel (TR)STripFET™ IIIe3Obsolete1 (Unlimited)2-EAR99-FET General Purpose Power24VMOSFET (Metal Oxide)GULL WING24560A30STB60N4R-PSSO-G2170W TcSingleENHANCEMENT MODE70W10 nsN-ChannelSWITCHING10.5m Ω @ 30A, 10V2.5V @ 250μA1400pF @ 15V60A Tc32nC @ 10V130ns5V 10V±20V16 ns27 ns60A-20V24V240A---NoROHS3 CompliantLead FreeyesMatte Tin (Sn)DRAIN---0.0105Ohm280 mJ--
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-26 Weeks-Surface MountSurface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB3--55°C~150°C TJCut Tape (CT)MDmesh™-Active1 (Unlimited)--EAR99---MOSFET (Metal Oxide)-NOT SPECIFIED-NOT SPECIFIEDSTB6N---60W Tc---19 nsN-Channel-1.35 Ω @ 2A, 10V4V @ 250μA226pF @ 100V4A Tc9.8nC @ 10V7ns10V±25V20 ns6.5 ns4A3V25V650V---No SVHC-ROHS3 Compliant---------3.949996g1
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