STMicroelectronics STB30NF20

Name: STB30NF20
Brand: STMicroelectronics
SKU: 3070225-STB30NF20
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: STB30NF20

Manufacturer:: STMicroelectronics

Ventron No:: 3070225-STB30NF20

Description:: MOSFET N-CH 200V 30A D2PAK

ECAD Model:

Datasheet:: STB30NF20

Specifications

STMicroelectronics STB30NF20 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STB30NF20.

Lifecycle Status
ACTIVE (Last Updated: 8 months ago)
Factory Lead Time
12 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-263-3, D2Pak (2 Leads Tab), TO-263AB
Number of Pins
2
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Series
STripFET™
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Resistance
65mOhm
Terminal Finish
MATTE TIN
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
245
Time@Peak Reflow Temperature-Max (s)
30
Base Part Number
STB30N
Pin Count
3
Number of Elements
1
Power Dissipation-Max
125W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
125W
Turn On Delay Time
35 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
75m Ω @ 15A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
1597pF @ 25V
Current - Continuous Drain (Id) @ 25°C
30A Tc
Gate Charge (Qg) (Max) @ Vgs
38nC @ 10V
Rise Time
15.7ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Fall Time (Typ)
8.8 ns
Turn-Off Delay Time
38 ns
Continuous Drain Current (ID)
30A
Threshold Voltage
3V
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
200V
Avalanche Energy Rating (Eas)
140 mJ
Nominal Vgs
3 V
Height
4.6mm
Length
10.4mm
Width
9.35mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

STB30NF20 Description
This Power MOSFET series, which was created using STMicroelectronics' unique STripFET technology, was created with the goal of reducing input capacitance and gate charge. As a result, it can be used as the primary switch in sophisticated isolated DC-DC converters with great efficiency.

STB30NF20 Features
The gate charge has been reduced.
Avalanche-proofed to the nth degree
(RDS*Qg) Excellent figure of merit
Exceptional manufacturing reliability
Intrinsically low capacitances

STB30NF20 Applications
Switching applications

STB30NF20 More Descriptions

N-channel 200 V, 0.065 Ohm, 30 A, D2PAK STripFET(TM) Power MOSFET
N-Channel 200 V 30 A 75 mOhm 125 W Power Mosfet - D2PAK
Trans MOSFET N-CH 200V 30A 3-Pin(2 Tab) D2PAK T/R / MOSFET N-CH 200V 30A D2PAK
N Ch Power Mosfet, Stripfet, 200V, 30A, D2Pak, Full Reel; Channel Type:N Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:30A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Power Dissipation:125W Rohs Compliant: Yes |Stmicroelectronics STB30NF20

Product Comparison

The three parts on the right have similar specifications to STB30NF20.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Series

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Resistance

Terminal Finish

Subcategory

Technology

Terminal Form

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Base Part Number

Pin Count

Number of Elements

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Avalanche Energy Rating (Eas)

Nominal Vgs

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Reach Compliance Code

JESD-30 Code

Qualification Status

Case Connection

Pulsed Drain Current-Max (IDM)

Voltage - Rated DC

Current Rating

View Compare
STB30NF20

STMicroelectronics

ACTIVE (Last Updated: 8 months ago)

12 Weeks

Surface Mount

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

2

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

STripFET™

e3

Active

1 (Unlimited)

2

EAR99

65mOhm

MATTE TIN

FET General Purpose Power

MOSFET (Metal Oxide)

GULL WING

245

30

STB30N

3

1

125W Tc

Single

ENHANCEMENT MODE

125W

35 ns

N-Channel

SWITCHING

75m Ω @ 15A, 10V

4V @ 250μA

1597pF @ 25V

30A Tc

38nC @ 10V

15.7ns

10V

±20V

8.8 ns

38 ns

30A

3V

20V

200V

140 mJ

3 V

4.6mm

10.4mm

9.35mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-
STB30NM50N

STMicroelectronics

-

-

Surface Mount

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

3

SILICON

150°C TJ

Tape & Reel (TR)

MDmesh™ II

e3

Obsolete

1 (Unlimited)

2

EAR99

-

Matte Tin (Sn) - annealed

FET General Purpose Power

MOSFET (Metal Oxide)

GULL WING

245

30

STB30N

4

1

190W Tc

Single

ENHANCEMENT MODE

190W

-

N-Channel

SWITCHING

115m Ω @ 13.5A, 10V

4V @ 250μA

2740pF @ 50V

27A Tc

94nC @ 10V

20ns

10V

±25V

60 ns

115 ns

27A

-

25V

500V

900 mJ

-

-

-

-

-

-

ROHS3 Compliant

-

not_compliant

R-PSSO-G2

Not Qualified

ISOLATED

-

-

-

STB30NF20 vs STB30NM50N
STB30NM60N

STMicroelectronics

-

-

Surface Mount

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

3

SILICON

150°C TJ

Tape & Reel (TR)

MDmesh™ II

e3

Obsolete

1 (Unlimited)

2

EAR99

130mOhm

Matte Tin (Sn)

FET General Purpose Power

MOSFET (Metal Oxide)

GULL WING

245

30

STB30N

4

1

190W Tc

Single

ENHANCEMENT MODE

190W

-

N-Channel

SWITCHING

130m Ω @ 12.5A, 10V

4V @ 250μA

2700pF @ 50V

25A Tc

91nC @ 10V

24ns

10V

±30V

70 ns

125 ns

25A

-

30V

600V

900 mJ

-

-

-

-

-

-

ROHS3 Compliant

Lead Free

not_compliant

R-PSSO-G2

Not Qualified

-

100A

-

-

STB30NF20 vs STB30NM60N
STB3NK60ZT4

STMicroelectronics

NRND (Last Updated: 7 months ago)

-

Surface Mount

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

3

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

SuperMESH™

e3

Active

1 (Unlimited)

2

EAR99

-

Matte Tin (Sn) - annealed

FET General Purpose Power

MOSFET (Metal Oxide)

GULL WING

245

30

STB3N

3

1

45W Tc

Single

ENHANCEMENT MODE

45W

9 ns

N-Channel

SWITCHING

3.6 Ω @ 1.2A, 10V

4.5V @ 50μA

311pF @ 25V

2.4A Tc

11.8nC @ 10V

14ns

10V

±30V

14 ns

19 ns

1.2A

3.75V

30V

600V

-

-

4.6mm

10.75mm

10.4mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

R-PSSO-G2

-

-

9.6A

600V

2.4A

STB30NF20 vs STB3NK60ZT4