STMicroelectronics STB21NK50Z

Name: STB21NK50Z
Brand: STMicroelectronics
SKU: 2849231-STB21NK50Z
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: STB21NK50Z

Manufacturer:: STMicroelectronics

Ventron No:: 2849231-STB21NK50Z

Description:: MOSFET N-CH 500V 17A D2PAK

ECAD Model:

Datasheet:: STB21NK50Z

Specifications

STMicroelectronics STB21NK50Z technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STB21NK50Z.

Lifecycle Status
NRND (Last Updated: 7 months ago)
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-263-3, D2Pak (2 Leads Tab), TO-263AB
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Series
Automotive, AEC-Q101, SuperMESH™
JESD-609 Code
e3
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Resistance
270mOhm
Terminal Finish
Matte Tin (Sn) - annealed
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Terminal Form
GULL WING
Base Part Number
STB21N
Pin Count
4
JESD-30 Code
R-PSSO-G2
Number of Elements
1
Power Dissipation-Max
190W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
190W
Turn On Delay Time
28 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
270m Ω @ 8.5A, 10V
Vgs(th) (Max) @ Id
4.5V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds
2600pF @ 25V
Current - Continuous Drain (Id) @ 25°C
17A Tc
Gate Charge (Qg) (Max) @ Vgs
119nC @ 10V
Rise Time
20ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±30V
Fall Time (Typ)
15 ns
Turn-Off Delay Time
70 ns
Continuous Drain Current (ID)
17A
Threshold Voltage
3.75V
Gate to Source Voltage (Vgs)
30V
Drain to Source Breakdown Voltage
500V
Pulsed Drain Current-Max (IDM)
68A
Avalanche Energy Rating (Eas)
850 mJ
Nominal Vgs
3.75 V
Height
4.6mm
Length
10.4mm
Width
9.35mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

STB21NK50Z Description

STB21NK50Z is an N-channel MOSFET in TO-263 package. This device is an N-channel Zener-protected Power MOSFET developed using STMicroelectronics' SuperMESH? technology, achieved through optimization of ST's well established strip-based PowerMESH? layout. In addition to a significant reduction in on resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications.
STB21NK50Z Features

Designed for automotive applications and AEC-Q101 qualified
Extremely high dv/dt capability
100% avalanche tested
Gate charge minimized
Very low intrinsic capacitances
Very good manufacturing repeatability
STB21NK50Z Applications

Switching applications
Data storage
Gaming
Home theater & entertainment
Mobile phones

STB21NK50Z More Descriptions

Trans MOSFET N-CH 500V 17A Automotive 3-Pin(2 Tab) D2PAK T/R
N-Channel 500 V 0.27 Ohm Surface Mount SuperMesh Power MosFet - D2PAK
Automotive grade N-channel 500 V, 0.23 Ohm typ., 17 A Zener-protected SuperMESH Power MOSFET in a D2PAK package
Mosfet Transistor, N Channel, 17 A, 500 V, 0.23 Ohm, 10 V, 3.75 V |Stmicroelectronics STB21NK50Z
Power Field-Effect Transistor, 17A I(D), 500V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
MOSFET, N-CH, 500V, 17A, D2PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 17A; Drain Source Voltage Vds: 500V; On Resistance Rds(on): 0.23ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.75V; Power Dissipation Pd: 190W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (17-Dec-2015)

Product Comparison

The three parts on the right have similar specifications to STB21NK50Z.

Image

Part Number

Manufacturer

Lifecycle Status

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Series

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Resistance

Terminal Finish

Subcategory

Technology

Terminal Form

Base Part Number

Pin Count

JESD-30 Code

Number of Elements

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Pulsed Drain Current-Max (IDM)

Avalanche Energy Rating (Eas)

Nominal Vgs

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Voltage - Rated DC

Peak Reflow Temperature (Cel)

Reach Compliance Code

Current Rating

Time@Peak Reflow Temperature-Max (s)

Qualification Status

Drain-source On Resistance-Max

View Compare
STB21NK50Z

STMicroelectronics

NRND (Last Updated: 7 months ago)

Surface Mount

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

3

SILICON

150°C TJ

Tape & Reel (TR)

Automotive, AEC-Q101, SuperMESH™

e3

Obsolete

1 (Unlimited)

2

EAR99

270mOhm

Matte Tin (Sn) - annealed

FET General Purpose Power

MOSFET (Metal Oxide)

GULL WING

STB21N

4

R-PSSO-G2

1

190W Tc

Single

ENHANCEMENT MODE

190W

28 ns

N-Channel

SWITCHING

270m Ω @ 8.5A, 10V

4.5V @ 100μA

2600pF @ 25V

17A Tc

119nC @ 10V

20ns

10V

±30V

15 ns

70 ns

17A

3.75V

30V

500V

68A

850 mJ

3.75 V

4.6mm

10.4mm

9.35mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-
STB22NS25ZT4

STMicroelectronics

-

Surface Mount

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

3

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

MESH OVERLAY™

e3

Obsolete

1 (Unlimited)

2

EAR99

-

Matte Tin (Sn) - annealed

FET General Purpose Power

MOSFET (Metal Oxide)

GULL WING

STB22N

3

R-PSSO-G2

1

135W Tc

Single

ENHANCEMENT MODE

135W

-

N-Channel

SWITCHING

150m Ω @ 11A, 10V

4V @ 250μA

2400pF @ 25V

22A Tc

151nC @ 10V

30ns

10V

±20V

78 ns

-

11A

3V

20V

250V

88A

-

-

-

-

-

No SVHC

-

ROHS3 Compliant

Lead Free

250V

245

not_compliant

22A

30

Not Qualified

0.15Ohm

STB21NK50Z vs STB22NS25ZT4
STB25NM50N-1

STMicroelectronics

-

Through Hole

Through Hole

TO-262-3 Long Leads, I2Pak, TO-262AA

3

SILICON

150°C TJ

Tube

MDmesh™ II

e3

Obsolete

1 (Unlimited)

3

-

140mOhm

Tin (Sn)

FET General Purpose Power

MOSFET (Metal Oxide)

-

STB25N

3

-

1

160W Tc

Single

ENHANCEMENT MODE

160W

-

N-Channel

SWITCHING

140m Ω @ 11A, 10V

4V @ 250μA

2565pF @ 25V

22A Tc

84nC @ 10V

23ns

10V

±25V

22 ns

75 ns

22A

-

25V

500V

88A

-

-

-

-

-

-

-

ROHS3 Compliant

Lead Free

500V

NOT SPECIFIED

not_compliant

22A

NOT SPECIFIED

Not Qualified

-

STB21NK50Z vs STB25NM50N-1
STB20NM50-1

STMicroelectronics

-

Through Hole

Through Hole

TO-262-3 Long Leads, I2Pak, TO-262AA

3

SILICON

-65°C~150°C TJ

Tube

MDmesh™

e3

Obsolete

1 (Unlimited)

3

EAR99

200mOhm

Tin (Sn)

FET General Purpose Power

MOSFET (Metal Oxide)

-

STB20N

3

-

1

192W Tc

Single

ENHANCEMENT MODE

192W

-

N-Channel

SWITCHING

250m Ω @ 10A, 10V

5V @ 250μA

1480pF @ 25V

20A Tc

56nC @ 10V

16ns

10V

±30V

8.5 ns

9 ns

20A

-

30V

500V

80A

650 mJ

-

-

-

-

-

-

ROHS3 Compliant

Lead Free

550V

NOT SPECIFIED

not_compliant

20A

NOT SPECIFIED

Not Qualified

-

STB21NK50Z vs STB20NM50-1