STMicroelectronics STB25NM50N

Name: STB25NM50N
Brand: STMicroelectronics
SKU: 3813744-STB25NM50N
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: STB25NM50N

Manufacturer:: STMicroelectronics

Ventron No:: 3813744-STB25NM50N

Description:: MOSFET N-CH 500V 22A D2PAK

ECAD Model:

Datasheet:: STx25NM50N

Specifications

STMicroelectronics STB25NM50N technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STB25NM50N.

Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-263-3, D2Pak (2 Leads Tab), TO-263AB
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Series
MDmesh™ II
JESD-609 Code
e3
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
Termination
SMD/SMT
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn) - annealed
Subcategory
FET General Purpose Power
Voltage - Rated DC
550V
Technology
MOSFET (Metal Oxide)
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
245
Current Rating
22A
Time@Peak Reflow Temperature-Max (s)
30
Base Part Number
STB25N
Pin Count
3
JESD-30 Code
R-PSSO-G2
Number of Elements
1
Power Dissipation-Max
160W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
160W
Turn On Delay Time
23 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
140m Ω @ 11A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
2565pF @ 25V
Current - Continuous Drain (Id) @ 25°C
22A Tc
Gate Charge (Qg) (Max) @ Vgs
84nC @ 10V
Rise Time
23ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±25V
Fall Time (Typ)
22 ns
Turn-Off Delay Time
75 ns
Continuous Drain Current (ID)
11A
Threshold Voltage
3V
Gate to Source Voltage (Vgs)
25V
Drain to Source Breakdown Voltage
500V
Pulsed Drain Current-Max (IDM)
88A
Dual Supply Voltage
500V
Nominal Vgs
3 V
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

STB25NM50N Description
STB25NM50N is a 500v N-channel MDmesh? II Power MOSFET. This STB25NM50N is realized with the second generation of MDmesh? Technology. This revolutionary MOSFET STB25NM50N associates a new vertical structure to the Company?ˉs strip layout to yield one of the world?ˉs lowest on-resistance and gate charges. It is, therefore, suitable for the most demanding high-efficiency converters.

STB25NM50N Features
100% avalanche tested
Low input capacitance and gate charge
Low gate input resistance
Drain-source voltage (VGS = 0): 500v
Drain current (continuous) at TC = 25 ??C: 22A

STB25NM50N Applications
Rotary Switch
DIP Switch
Limit Switch
Reed Switch
Rocker Switch
Toggle Switch

STB25NM50N More Descriptions

N-channel 500V - 0.11Ohm - 22A - TO-220 /FP- I2/D2PAK - TO-247
Trans MOSFET N-CH 500V 22A 3-Pin(2 Tab) D2PAK T/R
N Channel Mosfet, 800V, 11A, D2-Pak, Full Reel; Channel Type:N Channel; Drain Source Voltage Vds:800V; Continuous Drain Current Id:11A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:30V; Gate Source Threshold Voltage Max:3Vrohs Compliant: Yes |Stmicroelectronics STB25NM50N
MOSFET, N CH, 500V, 22A, D2PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 11A; Drain Source Voltage Vds: 500V; On Resistance Rds(on): 0.11ohm; Rds(on) Test Voltage Vgs: 30V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 160W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (17-Dec-2015); Current Id Max: 11A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C; Termination Type: Surface Mount Device; Transistor Type: Power MOSFET; Voltage Vds Typ: 500V; Voltage Vgs Max: 3V; Voltage Vgs Rds on Measurement: 10V

Product Comparison

The three parts on the right have similar specifications to STB25NM50N.

Image

Part Number

Manufacturer

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Series

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

Termination

ECCN Code

Terminal Finish

Subcategory

Voltage - Rated DC

Technology

Terminal Form

Peak Reflow Temperature (Cel)

Current Rating

Time@Peak Reflow Temperature-Max (s)

Base Part Number

Pin Count

JESD-30 Code

Number of Elements

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Pulsed Drain Current-Max (IDM)

Dual Supply Voltage

Nominal Vgs

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Resistance

Reach Compliance Code

Qualification Status

Avalanche Energy Rating (Eas)

View Compare
STB25NM50N

STMicroelectronics

Surface Mount

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

3

SILICON

150°C TJ

Tape & Reel (TR)

MDmesh™ II

e3

Obsolete

1 (Unlimited)

2

SMD/SMT

EAR99

Matte Tin (Sn) - annealed

FET General Purpose Power

550V

MOSFET (Metal Oxide)

GULL WING

245

22A

30

STB25N

3

R-PSSO-G2

1

160W Tc

Single

ENHANCEMENT MODE

160W

23 ns

N-Channel

SWITCHING

140m Ω @ 11A, 10V

4V @ 250μA

2565pF @ 25V

22A Tc

84nC @ 10V

23ns

10V

±25V

22 ns

75 ns

11A

3V

25V

500V

88A

500V

3 V

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-
STB25NM50N-1

STMicroelectronics

Through Hole

Through Hole

TO-262-3 Long Leads, I2Pak, TO-262AA

3

SILICON

150°C TJ

Tube

MDmesh™ II

e3

Obsolete

1 (Unlimited)

3

-

-

Tin (Sn)

FET General Purpose Power

500V

MOSFET (Metal Oxide)

-

NOT SPECIFIED

22A

NOT SPECIFIED

STB25N

3

-

1

160W Tc

Single

ENHANCEMENT MODE

160W

-

N-Channel

SWITCHING

140m Ω @ 11A, 10V

4V @ 250μA

2565pF @ 25V

22A Tc

84nC @ 10V

23ns

10V

±25V

22 ns

75 ns

22A

-

25V

500V

88A

-

-

-

-

ROHS3 Compliant

Lead Free

140mOhm

not_compliant

Not Qualified

-

STB25NM50N vs STB25NM50N-1
STB20NM50-1

STMicroelectronics

Through Hole

Through Hole

TO-262-3 Long Leads, I2Pak, TO-262AA

3

SILICON

-65°C~150°C TJ

Tube

MDmesh™

e3

Obsolete

1 (Unlimited)

3

-

EAR99

Tin (Sn)

FET General Purpose Power

550V

MOSFET (Metal Oxide)

-

NOT SPECIFIED

20A

NOT SPECIFIED

STB20N

3

-

1

192W Tc

Single

ENHANCEMENT MODE

192W

-

N-Channel

SWITCHING

250m Ω @ 10A, 10V

5V @ 250μA

1480pF @ 25V

20A Tc

56nC @ 10V

16ns

10V

±30V

8.5 ns

9 ns

20A

-

30V

500V

80A

-

-

-

-

ROHS3 Compliant

Lead Free

200mOhm

not_compliant

Not Qualified

650 mJ

STB25NM50N vs STB20NM50-1
STB20NM50FDT4

STMicroelectronics

Surface Mount

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

3

SILICON

150°C TJ

Tape & Reel (TR)

FDmesh™

e3

Not For New Designs

1 (Unlimited)

2

-

EAR99

Matte Tin (Sn) - annealed

FET General Purpose Power

-

MOSFET (Metal Oxide)

GULL WING

245

-

30

STB20N

3

R-PSSO-G2

1

192W Tc

Single

ENHANCEMENT MODE

192W

22 ns

N-Channel

SWITCHING

250m Ω @ 10A, 10V

5V @ 250μA

1380pF @ 25V

20A Tc

53nC @ 10V

20ns

10V

±30V

15 ns

-

20A

-

30V

500V

80A

-

-

-

No

ROHS3 Compliant

Lead Free

250mOhm

-

-

700 mJ

STB25NM50N vs STB20NM50FDT4