Infineon Technologies SPP08N80C3
- Part Number:
- SPP08N80C3
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2483378-SPP08N80C3
- Description:
- MOSFET N-CH 800V 8A TO-220AB
- Datasheet:
- SPP08N80C3
Infineon Technologies SPP08N80C3 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies SPP08N80C3.
- Factory Lead Time6 Weeks
- Package / CaseTO-220-3
- Surface MountNO
- Number of Pins3
- Published2000
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Number of Terminations3
- Terminal FinishMatte Tin (Sn)
- Max Operating Temperature150°C
- Min Operating Temperature-55°C
- Additional FeatureAVALANCHE RATED, HIGH VOLTAGE
- SubcategoryFET General Purpose Power
- Voltage - Rated DC800V
- Terminal FormTHROUGH-HOLE
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Current Rating8A
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Pin Count3
- Qualification StatusNot Qualified
- Number of Elements1
- Power Dissipation-Max104W
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation104W
- Turn On Delay Time25 ns
- Halogen FreeHalogen Free
- Rise Time15ns
- Polarity/Channel TypeN-CHANNEL
- Fall Time (Typ)7 ns
- Turn-Off Delay Time65 ns
- Continuous Drain Current (ID)8A
- JEDEC-95 CodeTO-220AB
- Gate to Source Voltage (Vgs)20V
- Drain Current-Max (Abs) (ID)8A
- Drain to Source Breakdown Voltage800V
- Pulsed Drain Current-Max (IDM)24A
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Drain to Source Resistance650mOhm
- Rds On Max650 mΩ
- Capacitance - Input1.1nF
- Height15.95mm
- Length10.36mm
- Width4.57mm
- REACH SVHCNo SVHC
- RoHS StatusRoHS Compliant
- Lead FreeContains Lead
SPP08N80C3 Overview
Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 8A.When VGS=800V, and ID flows to VDS at 800VVDS, the drain-source breakdown voltage is 800V in this device.As shown in the table below, the drain current of this device is 8A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 65 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 24A.MOSFETs exhibit Drain-to-Source Resistance when a specific gate-to-source voltage (VGS) is applied to bias them into the on state, and this device's resistance is 650mOhm.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 25 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.
SPP08N80C3 Features
a continuous drain current (ID) of 8A
a drain-to-source breakdown voltage of 800V voltage
the turn-off delay time is 65 ns
based on its rated peak drain current 24A.
single MOSFETs transistor is 650mOhm
SPP08N80C3 Applications
There are a lot of Infineon
SPP08N80C3 applications of single MOSFETs transistors.
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 8A.When VGS=800V, and ID flows to VDS at 800VVDS, the drain-source breakdown voltage is 800V in this device.As shown in the table below, the drain current of this device is 8A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 65 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 24A.MOSFETs exhibit Drain-to-Source Resistance when a specific gate-to-source voltage (VGS) is applied to bias them into the on state, and this device's resistance is 650mOhm.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 25 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.
SPP08N80C3 Features
a continuous drain current (ID) of 8A
a drain-to-source breakdown voltage of 800V voltage
the turn-off delay time is 65 ns
based on its rated peak drain current 24A.
single MOSFETs transistor is 650mOhm
SPP08N80C3 Applications
There are a lot of Infineon
SPP08N80C3 applications of single MOSFETs transistors.
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
The three parts on the right have similar specifications to SPP08N80C3.
-
ImagePart NumberManufacturerFactory Lead TimePackage / CaseSurface MountNumber of PinsPublishedJESD-609 CodePbfree CodePart StatusNumber of TerminationsTerminal FinishMax Operating TemperatureMin Operating TemperatureAdditional FeatureSubcategoryVoltage - Rated DCTerminal FormPeak Reflow Temperature (Cel)Current RatingTime@Peak Reflow Temperature-Max (s)Pin CountQualification StatusNumber of ElementsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationTurn On Delay TimeHalogen FreeRise TimePolarity/Channel TypeFall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)JEDEC-95 CodeGate to Source Voltage (Vgs)Drain Current-Max (Abs) (ID)Drain to Source Breakdown VoltagePulsed Drain Current-Max (IDM)FET TechnologyDrain to Source ResistanceRds On MaxCapacitance - InputHeightLengthWidthREACH SVHCRoHS StatusLead FreePackagingFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdDrain to Source Voltage (Vdss)Continuous Drain Current (Id) @ 25°CPower Dissipation-Max (Ta=25°C)Moisture Sensitivity Level (MSL)MountRadiation HardeningView Compare
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SPP08N80C36 WeeksTO-220-3NO32000e3yesActive3Matte Tin (Sn)150°C-55°CAVALANCHE RATED, HIGH VOLTAGEFET General Purpose Power800VTHROUGH-HOLENOT SPECIFIED8ANOT SPECIFIED3Not Qualified1104WSingleENHANCEMENT MODE104W25 nsHalogen Free15nsN-CHANNEL7 ns65 ns8ATO-220AB20V8A800V24AMETAL-OXIDE SEMICONDUCTOR650mOhm650 mΩ1.1nF15.95mm10.36mm4.57mmNo SVHCRoHS CompliantContains Lead-----------
-
-TO-220(TO-220-3)--------------------------------------------RoHS Compliant-Tube-packedN Channel1.3Ω @ 2.5A,10V3.9V @ 240uA800V4A Tc63W Tc---
-
-------Obsolete--------------------------------------Non-RoHS Compliant--------1 (Unlimited)--
-
2 WeeksTO-220--2005--Last Time Buy--150°C-55°C---------1-Single-82W120 ns-40ns-20 ns170 ns7.3A-20V-600V--600mOhm------ROHS3 Compliant-Rail/Tube------1 (Unlimited)Through HoleNo
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